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    Display device
    31.
    发明申请
    Display device 审中-公开
    显示设备

    公开(公告)号：US20070080625A1

    公开(公告)日：2007-04-12

    申请号：US11449738

    申请日：2006-06-09

    Applicant: Shang-Hyeun Park ,  Jeong-Hee Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Jeong-Na Heo ,  Tae-Won Jeong

    Inventor： Shang-Hyeun Park ,  Jeong-Hee Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Jeong-Na Heo ,  Tae-Won Jeong

    IPC: H01J63/04 ,  H01J1/62

    CPC classification number: H01J31/123 ,  H01J31/127

    Abstract: A display device includes: a first substrate and a second substrate, a plurality of first electrodes, a light emitting layer, and a plurality of second electrodes. The first and second substrates are spaced apart to face each other, and the plurality of first electrodes are formed on an inner surface of the first substrate. The light emitting layer is arranged on the plurality of first electrodes and includes phosphor bodies and light emitting sources mixed therein. The plurality of second electrodes are arranged on an inner surface of the second substrate.

    Abstract translation: 显示装置包括：第一基板和第二基板，多个第一电极，发光层和多个第二电极。 第一和第二基板间隔开以面对彼此，并且多个第一电极形成在第一基板的内表面上。 发光层布置在多个第一电极上，并且包括混合在其中的荧光体和发光源。 多个第二电极布置在第二基板的内表面上。

    Field emission device and field emission display using the same
    32.
    发明申请
    Field emission device and field emission display using the same 失效
    场发射装置和场发射显示使用相同

    公开(公告)号：US20050258739A1

    公开(公告)日：2005-11-24

    申请号：US11130264

    申请日：2005-05-17

    Applicant: Young-Jun Park ,  Yong-Wan Jin ,  In-Taek Han

    Inventor： Young-Jun Park ,  Yong-Wan Jin ,  In-Taek Han

    IPC: H01J31/12 ,  H01J1/02 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J29/48

    CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J29/481 ,  H01J2201/30469

    Abstract: A field emission device and a field emission display (FED) using the same and a method of making the field emission device. The FED includes a glass substrate, a layer of a material formed on the glass substrate and having a concave portion, a cathode electrode formed on the material layer and also having a concave portion, electron emitters formed on the concave portion of the cathode electrode, a gate insulating layer formed on the cathode electrode and having a cavity communicating with the concave portion, and a gate electrode formed on the gate insulating layer and having a gate aperture aligned with the cavity.

    Abstract translation: 场发射器件和使用其的场致发射显示器（FED）以及制造场致发射器件的方法。 FED包括玻璃基板，形成在玻璃基板上的具有凹部的材料层，形成在材料层上的阴极，还具有凹部，形成在阴极电极的凹部上的电子发射体， 形成在所述阴极电极上且具有与所述凹部连通的空腔的栅极绝缘层，以及形成在所述栅极绝缘层上并具有与所述空腔对准的栅极孔的栅电极。

    Field emission array with carbon nanotubes
    33.
    发明授权
    Field emission array with carbon nanotubes 失效
    具有碳纳米管的场发射阵列

    公开(公告)号：US06642639B2

    公开(公告)日：2003-11-04

    申请号：US09837225

    申请日：2001-04-19

    Applicant: Won-bong Choi ,  Min-jae Yun ,  Yong-wan Jin

    Inventor： Won-bong Choi ,  Min-jae Yun ,  Yong-wan Jin

    IPC: H01J102

    CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/952

    Abstract: A field emission array adopting carbon nanotubes as an electron emitter source, wherein the array includes a rear substrate assembly including cathodes formed as stripes over a rear substrate and carbon nanotubes; a front substrate assembly including anodes formed as stripes over a front substrate with phosphors being deposited on the anodes, a plurality of openings separated by a distance corresponding to the distance between the anodes in a nonconductive plate, and gates formed as stripes perpendicular to the stripes of anodes on the nonconductive plate with a plurality of emitter openings corresponding to the plurality of openings. The nonconductive plate is supported and separated from the front substrate using spacers. The rear substrate assembly is combined with the front substrate assembly such that the carbon nanotubes on the cathodes project through the emitter openings.

    Abstract translation: 一种采用碳纳米管作为电子发射源的场致发射阵列，其中阵列包括后衬底组件，其包括在后衬底上形成为条纹的阴极和碳纳米管; 前面基板组件，其包括在正面基板上形成的带状荧光体的阳极，该荧光体沉积在阳极上，多个开口被分隔开与非导电板中的阳极之间的距离相对应的开口，以及形成为垂直于条纹的条纹的栅极 阳极在非导电板上具有对应于多个开口的多个发射器开口。 非导电板使用间隔件从前基板支撑和分离。 后基板组件与前基板组件结合，使得阴极上的碳纳米管突出通过发射器开口。

    Image sensor
    38.
    发明授权
    Image sensor 有权
    图像传感器

    公开(公告)号：US08476682B2

    公开(公告)日：2013-07-02

    申请号：US13224613

    申请日：2011-09-02

    Applicant: Do Hwan Kim ,  Woong Choi ,  Kyung Bae Park ,  Kyu Sik Kim ,  Yong Wan Jin ,  Kwang Hee Lee

    Inventor： Do Hwan Kim ,  Woong Choi ,  Kyung Bae Park ,  Kyu Sik Kim ,  Yong Wan Jin ,  Kwang Hee Lee

    IPC: H01L27/48

    CPC classification number: H01L51/0043 ,  H01L51/4253

    Abstract: An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device.

    Abstract translation: 图像传感器的示例性实施例包括光检测装置，其包括第一电极，与第一电极相对设置的第二电极和位于第一电极和第二电极之间的光电转换层。 光电转换层包括含有给电子基团和电子接受嵌段的嵌段共聚物。 给电子块沉积在一起并连接到第一电极和第二电极。 电子接收块被沉积在一起并连接到第一电极和第二电极。 滤色器可以位于光感测装置的第二电极上。

    Semiconductor Device, Method Of Manufacturing The Same, And Electronic Device Including The Semiconductor Device
    39.
    发明申请
    Semiconductor Device, Method Of Manufacturing The Same, And Electronic Device Including The Semiconductor Device 有权
    半导体器件及其制造方法以及包括半导体器件的电子器件

    公开(公告)号：US20120248414A1

    公开(公告)日：2012-10-04

    申请号：US13292285

    申请日：2011-11-09

    Applicant: Sun-kook Kim ,  Woong Choi ,  Yong-wan Jin

    Inventor： Sun-kook Kim ,  Woong Choi ,  Yong-wan Jin

    IPC: H01L29/772 ,  H01L21/336 ,  B82Y40/00 ,  B82Y99/00

    CPC classification number: H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/1054 ,  H01L29/66431 ,  H01L29/7782 ,  H01L29/7831 ,  Y10S977/734

    Abstract: An example embodiment relates to a semiconductor device including a semiconductor element. The semiconductor element may include a plurality of unit layers spaced apart from each other in a vertical direction. Each unit layer may include a patterned graphene layer. The patterned graphene layer may be a layer patterned in a nanoscale. The patterned graphene layer may have a nanomesh or nanoribbon structure. The semiconductor device may be a transistor or a diode. An example embodiment relates to a method of making a semiconductor device including a semiconductor element.

    Abstract translation: 示例性实施例涉及包括半导体元件的半导体器件。 半导体元件可以包括在垂直方向上彼此间隔开的多个单元层。 每个单位层可以包括图案化的石墨烯层。 图案化的石墨烯层可以是以纳米尺度图案化的层。 图案化石墨烯层可以具有纳米级或纳米级结构。 半导体器件可以是晶体管或二极管。 示例性实施例涉及制造包括半导体元件的半导体器件的方法。

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