公开(公告)号：US08212288B2

公开(公告)日：2012-07-03

申请号：US12879035

申请日：2010-09-10

申请人： Jun Komiyama ,  Kenichi Eriguchi ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

发明人： Jun Komiyama ,  Kenichi Eriguchi ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

IPC分类号： H01L21/02

CPC分类号： H01L21/0254 ,  H01L21/02458 ,  H01L21/02507

摘要： A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.

摘要翻译： 一种禁止产生裂纹或翘曲的化合物半导体衬底，优选用于常闭型高击穿电压器件，其中AlxGa1-xN单晶层（0.6＆amp; NlE; X＆amp; NlE; 1.0 ）含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层（0.1＆lt; 1lE; y＆nlE; 0.5） 交替重复堆叠，并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和AlGa1-yN单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。 以这种方式制造化合物半导体衬底。

公开(公告)号：US08148753B2

公开(公告)日：2012-04-03

申请号：US12659927

申请日：2010-03-25

申请人： Hiroshi Oishi ,  Jun Komiyama ,  Kenichi Eriguchi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

发明人： Hiroshi Oishi ,  Jun Komiyama ,  Kenichi Eriguchi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

IPC分类号： H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/06 ,  H01L29/22 ,  H01L33/00 ,  H01L29/24 ,  H01L29/732

CPC分类号： C30B29/403 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7787

摘要： The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0

摘要翻译： 本发明提供了一种化合物半导体衬底，包括：具有（111）取向的晶面的单晶硅衬底; 第一缓冲层，其形成在单晶硅衬底上并由Al x Ga 1-x N单晶（0

公开(公告)号：US07812969B2

公开(公告)日：2010-10-12

申请号：US11820972

申请日：2007-06-21

申请人： Koji Morimoto ,  Yoshihisa Abe ,  Shinichi Horita

发明人： Koji Morimoto ,  Yoshihisa Abe ,  Shinichi Horita

IPC分类号： G01B11/24

CPC分类号： G01B11/2545

摘要： A three-dimensional shape measuring apparatus includes a measuring section and a data integrating section. The measuring section has three-dimensional measurement dimensions, and measures a three-dimensional shape of a measurement object in a non-contact state. The measuring section measures a three-dimensional shape of a part of the measurement object multiple times by shifting the measurement dimensions to obtain multiple measurement data. The measurement dimensions are shifted in such a manner that at least portions of consecutive measurement dimensions by the shifting are lapped one over the other. The data integrating section integrates the multiple measurement data to obtain the three-dimensional shape of the measurement object. The data integrating section executes the data integration, using reliability information attributed to the respective measurement data.

摘要翻译： 三维形状测量装置包括测量部分和数据积分部分。 测量部具有三维测量尺寸，并且测量非接触状态下的测量对象的三维形状。 测量部通过移动测量尺寸来测量测量对象的一部分的三维形状以获得多个测量数据。 测量尺寸以这样的方式移动，使得通过移位的连续测量尺寸的至少一部分彼此重叠。 数据积分部分集成了多个测量数据，以获得测量对象的三维形状。 数据积分部使用归属于各测量数据的可靠性信息来执行数据积分。

公开(公告)号：US20090201292A1

公开(公告)日：2009-08-13

申请号：US12322963

申请日：2009-02-10

申请人： Yoshihisa Abe ,  Toshio Kawano

发明人： Yoshihisa Abe ,  Toshio Kawano

IPC分类号： G06T15/50

CPC分类号： G01B11/25

摘要： A method is provided for controlling display of three-dimensional data in a three-dimensional processor that processes three-dimensional data indicating three-dimensional position coordinates of each point on a surface of an object to be measured, the three-dimensional data being obtained by projecting measurement light onto the object and receiving measurement light reflected from the object. The method includes obtaining reliability data that are an index of reliability of three-dimensional data of said each point, enabling a user to adjust a threshold for defining a range of the reliability, and displaying, on a screen of a display, three-dimensional data corresponding to reliability falling within a range defined by the threshold adjusted by the user with the three-dimensional data displayed distinguishably from different three-dimensional data.

摘要翻译： 提供了一种用于控制三维处理器中的三维数据的显示的方法，该三维处理器处理指示待测物体的表面上的每个点的三维位置坐标的三维数据，获得的三维数据 通过将测量光投射到物体上并接收从物体反射的测量光。 该方法包括获得作为所述每个点的三维数据的可靠性的索引的可靠性数据，使得用户能够调整用于定义可靠性的范围的阈值，并且在显示器的屏幕上显示三维 与由用户调整的阈值所限定的范围内的可靠度相对应的数据与由不同的三维数据可区分地显示的三维数据相对应的数据。

公开(公告)号：US20090065812A1

公开(公告)日：2009-03-12

申请号：US12204328

申请日：2008-09-04

申请人： Yoshihisa ABE ,  Jun Komiyama ,  Shunichi Suzuki ,  Hiroshi Oishi ,  Akira Yoshida ,  Hideo Nakanishi

发明人： Yoshihisa ABE ,  Jun Komiyama ,  Shunichi Suzuki ,  Hiroshi Oishi ,  Akira Yoshida ,  Hideo Nakanishi

IPC分类号： H01L29/205

CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254

摘要： Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer 110 formed on a Si single crystal substrate 100 having a crystal plane orientation of {111}. In the layer 110, a first metal compound layer 110a made of any one of TiC, TiN, VC and VN, and a second metal compound layer 110b made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.

摘要翻译： 提供了一种化合物半导体衬底，可以使氮化物半导体单晶层的厚度大得多，同时在氮化物半导体单晶层中抑制裂纹，晶体缺陷等的产生。 基板具有形成在晶体取向为{111}的Si单晶基板100上的第一中间层110。 在层110中，由TiC，TiN，VC和VN中的任一种制成的第一金属化合物层110a和由与第一金属化合物层的化合物不同的任何一种化合物制成的第二金属化合物层110b 的TiC，TiN，VC和VN以这种顺序层叠在Si单晶上。

公开(公告)号：US20070116663A1

公开(公告)日：2007-05-24

申请号：US10581285

申请日：2004-11-30

申请人： Tetsuro Iwanaga ,  Kazuhito Uchida ,  Nobuyuki Takeuchi ,  Yoshihisa Abe

发明人： Tetsuro Iwanaga ,  Kazuhito Uchida ,  Nobuyuki Takeuchi ,  Yoshihisa Abe

IPC分类号： A61K8/37

CPC分类号： A61Q19/10 ,  A61K8/068 ,  A61K8/86 ,  A61Q1/14

摘要： An object of the present invention is to provide a polyglycerol medium-chain fatty acid ester-containing composition capable of forming a water-in-oil microemulsion, the microemulsion being capable of solubilizing a large amount of water, and the composition having excellent dispersibility and self-emulsifiability in water, and cosmetics comprising the composition. The present invention relates to a polyglycerol medium-chain fatty acid ester-containing composition comprising a polyglycerol medium-chain fatty acid ester formed by esterification of a medium-chain fatty acid having 6 to 10 carbon atoms and a polyglycerol having an average degree of polymerization of 3 or more and less than 100, and a nonionic surfactant; and cosmetics comprising the polyglycerol medium-chain fatty acid ester-containing composition as defined above.

摘要翻译： 本发明的目的是提供一种能够形成油包水微乳液的聚甘油中链脂肪酸酯组合物，该微乳液能够溶解大量的水，并且该组合物具有优异的分散性和 水中的自乳化性和包含该组合物的化妆品。 本发明涉及一种含有聚甘油中链脂肪酸酯的组合物，其含有通过酯化具有6〜10个碳原子的中链脂肪酸形成的聚甘油中链脂肪酸酯和具有平均聚合度的聚甘油 3以上且小于100，非离子表面活性剂; 以及含有上述聚甘油中链脂肪酸酯组合物的化妆品。

公开(公告)号：US20060290945A1

公开(公告)日：2006-12-28

申请号：US11268948

申请日：2005-11-08

申请人： Akira Kubo ,  Shinichi Horita ,  Yoshihisa Abe

发明人： Akira Kubo ,  Shinichi Horita ,  Yoshihisa Abe

IPC分类号： G01B11/24

CPC分类号： G01B21/04

摘要： A three-dimensional measuring system for measuring a three-dimensional shape of a measurement object in a noncontact manner includes a first obtaining portion for obtaining arrangement information of the measurement object, a second obtaining portion for obtaining design shape information of the measurement object, a fourth obtaining portion for obtaining specifics information about one or more three-dimensional measuring devices, a determining portion for determining a measurable part that can be measured by the three-dimensional measuring device about a surface shape of the measurement object in accordance with the obtained arrangement information, the obtained design shape information and the obtained specifics information, and an output portion for outputting the determined measurable part.

公开(公告)号：US20060138448A1

公开(公告)日：2006-06-29

申请号：US11298490

申请日：2005-12-12

申请人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

发明人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

IPC分类号： H01L33/00

CPC分类号： H01L29/452 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L33/007

摘要： A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w

摘要翻译： 背面电极6形成在化合物半导体的Si单晶衬底2的背面，其中厚度为0.05-2μm的n型3C-SiC单晶缓冲层3，载流子浓度为10 ^{16×10 21 / cm 3，六方晶系Al x 厚度为0.01-0.5μm的1-wx N单晶缓冲层4（0 <= w <1,0 <= x <1，w + x <1）和n型六方晶系 在Al 3 O 3中，单晶层5（0 <= y <1,0 3 <！ - SIPO - >，并且在六方晶系AlGaN / N单晶层5，以提供化合物 导致很少的能量损失并且允许高效率和高的击穿电压的半导体器件。}

公开(公告)号：US20060011941A1

公开(公告)日：2006-01-19

申请号：US11174610

申请日：2005-07-06

申请人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Jun Komiyama

发明人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Jun Komiyama

IPC分类号： H01L31/109

CPC分类号： G02F1/03

摘要： A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.

摘要翻译： 在Si（001）基板2上形成用于生长用于缓冲Si和BTO之间的晶格失配的两层或多层缓冲层3,4和5的电光单晶薄膜的衬底1，作为 用于生长可以获得具有大尺寸和非常高质量的BTO单晶薄膜6等的电光单晶薄膜的电光单晶薄膜的基板。

公开(公告)号：US5012984A

公开(公告)日：1991-05-07

申请号：US488557

申请日：1990-03-05

申请人： Hiroshi Ishikawa ,  Kazuo Koyata ,  Tetsuo Ono ,  Takuo Motizuki ,  Masayuki Sakuta ,  Show Onodera ,  Hiroshi Yanagioka ,  Yoshihisa Abe

发明人： Hiroshi Ishikawa ,  Kazuo Koyata ,  Tetsuo Ono ,  Takuo Motizuki ,  Masayuki Sakuta ,  Show Onodera ,  Hiroshi Yanagioka ,  Yoshihisa Abe

IPC分类号： B65G53/30 ,  B01F17/00 ,  C10L1/32 ,  C10L10/18

CPC分类号： C10L1/32

摘要： A process for the production of a coal-water mixture, which comprises dry-pulverizing coal under supply of hot air to form pulverized coal in which the proportion of particles having a particle size smaller than 200 .mu.m is at least 90%, in which the proportion of particles having a particle size smaller than 10 .mu.m is 10 to 60%, and making the pulverized coal and the hot air sucked in a mixed-air water jet stream.