公开(公告)号：US5012984A

公开(公告)日：1991-05-07

申请号：US488557

申请日：1990-03-05

申请人： Hiroshi Ishikawa ,  Kazuo Koyata ,  Tetsuo Ono ,  Takuo Motizuki ,  Masayuki Sakuta ,  Show Onodera ,  Hiroshi Yanagioka ,  Yoshihisa Abe

发明人： Hiroshi Ishikawa ,  Kazuo Koyata ,  Tetsuo Ono ,  Takuo Motizuki ,  Masayuki Sakuta ,  Show Onodera ,  Hiroshi Yanagioka ,  Yoshihisa Abe

IPC分类号： B65G53/30 ,  B01F17/00 ,  C10L1/32 ,  C10L10/18

CPC分类号： C10L1/32

摘要： A process for the production of a coal-water mixture, which comprises dry-pulverizing coal under supply of hot air to form pulverized coal in which the proportion of particles having a particle size smaller than 200 .mu.m is at least 90%, in which the proportion of particles having a particle size smaller than 10 .mu.m is 10 to 60%, and making the pulverized coal and the hot air sucked in a mixed-air water jet stream.

公开(公告)号：US20120211763A1

公开(公告)日：2012-08-23

申请号：US13352987

申请日：2012-01-18

申请人： Akira Yoshida ,  Jun Komiyama ,  Yoshihisa Abe ,  Hiroshi Oishi ,  Kenichi Eriguchi ,  Shunichi Suzuki

发明人： Akira Yoshida ,  Jun Komiyama ,  Yoshihisa Abe ,  Hiroshi Oishi ,  Kenichi Eriguchi ,  Shunichi Suzuki

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7787

摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).

摘要翻译： 提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。 在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和 形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

公开(公告)号：US20120040172A1

公开(公告)日：2012-02-16

申请号：US10592085

申请日：2006-02-07

申请人： Hirokazu Fujiwara ,  Norimasa Yamada ,  Yoshihisa Abe

发明人： Hirokazu Fujiwara ,  Norimasa Yamada ,  Yoshihisa Abe

IPC分类号： B32B9/00 ,  B32B5/18 ,  B05D5/00 ,  B32B33/00 ,  B05D3/02 ,  B05D7/00 ,  B32B7/02 ,  B32B5/14

CPC分类号： C30B29/36 ,  C04B41/009 ,  C04B41/5057 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2111/0025 ,  C04B2111/00405 ,  C23C16/029 ,  C23C16/045 ,  C23C16/06 ,  C23C16/32 ,  C23C16/56 ,  C30B25/02 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/249961 ,  Y10T428/249981 ,  Y10T428/249987 ,  Y10T428/26 ,  Y10T428/263 ,  Y10T428/30 ,  C04B41/0072 ,  C04B41/4531 ,  C04B41/4556 ,  C04B41/4582 ,  C04B35/522 ,  C04B35/52

摘要： The problem of the present invention is provision of a tantalum carbide-coated carbon material having superior corrosion resistance to reducing gas and superior resistance to thermal shock at a high temperature and a production method thereof.According to the present invention, a tantalum carbide-coated carbon material having a carbon substrate and a coating film formed directly or via an intermediate layer on the aforementioned carbon substrate can be provided. The coating film consists of a number of microcrystals of tantalum carbide, which are densely gathered and, in an X-ray diffraction pattern of the coating film, the diffraction intensity of the (220) plane of tantalum carbide preferably shows the maximum level, more preferably, the aforementioned diffraction intensity is not less than 4 times the intensity of the second highest diffraction intensity.

摘要翻译： 本发明的问题在于提供具有优异的耐还原气体耐腐蚀性和耐高温热冲击性的碳化钽碳化碳材料及其制造方法。 根据本发明，可以提供具有碳基板和直接形成在上述碳基板上的中间层形成的涂膜的碳化钽碳化碳材料。 涂膜由许多碳化钽微晶组成，它们密集地聚集，并且在涂膜的X射线衍射图中，碳化钽的（220）面的衍射强度优选显示最大水平，更多 优选上述衍射强度不小于第二高衍射强度强度的4倍。

公开(公告)号：US07368757B2

公开(公告)日：2008-05-06

申请号：US11298490

申请日：2005-12-12

申请人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

发明人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

IPC分类号： H01L31/0312

CPC分类号： H01L29/452 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L33/007

摘要： A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w

摘要翻译： 背面电极6形成在化合物半导体的Si单晶衬底2的背面，其中厚度为0.05-2μm的n型3C-SiC单晶缓冲层3，载流子浓度为10 ^{16×10 21 / cm 3，六方晶系Al x 厚度为0.01-0.5μm的1-wx N单晶缓冲层4（0 <= w <1,0 <= x <1，w + x <1）和n型六方晶系 在Al 3 O 3中，单晶层5（0 <= y <1,0 3 <！ - SIPO - >面，并且在六方晶系的表面上形成表面电极7， 单晶层5，以提供化合物s 导致少量能量损失并且允许高效率和高击穿电压的半导体器件。}

公开(公告)号：US07262485B2

公开(公告)日：2007-08-28

申请号：US11174610

申请日：2005-07-06

申请人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Jun Komiyama

发明人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Jun Komiyama

IPC分类号： H01L29/30 ,  H01L29/04 ,  H01L31/036

CPC分类号： G02F1/03

摘要： A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.

摘要翻译： 在Si（001）基板2上形成用于生长用于缓冲Si和BTO之间的晶格失配的两层或多层缓冲层3,4和5的电光单晶薄膜的衬底1，作为 用于生长可以获得具有大尺寸和非常高质量的BTO单晶薄膜6等的电光单晶薄膜的电光单晶薄膜的基板。

公开(公告)号：US06798527B2

公开(公告)日：2004-09-28

申请号：US10128523

申请日：2002-04-24

申请人： Tadashi Fukumoto ,  Shigeru Osaki ,  Masahiro Ariizumi ,  Norio Matsunaga ,  Yoshihisa Abe

发明人： Tadashi Fukumoto ,  Shigeru Osaki ,  Masahiro Ariizumi ,  Norio Matsunaga ,  Yoshihisa Abe

IPC分类号： G01B1124

CPC分类号： G01B11/245 ,  G01B11/2518

摘要： An object of the present invention is to provide a method for accurately measuring a three-dimensional shape of a measuring subject independent of the surface shape of the measuring subject, and another object thereof is to shorten the time from the measurements of the measuring subject until three-dimensional shape data is obtained so as to carry out efficient measuring operations. In a three-dimensional measuring system 1 that measures a three-dimensional shape of a measuring subject, two three-dimensional measuring devices 10, 20 are placed. The three-dimensional measuring device 10 measures a measuring subject placed in a measuring space 3 by allowing a laser slit light L1 in a longitudinal direction to scan in a lateral direction. Moreover, the three-dimensional measuring device 20 measures the measuring subject placed in a measuring space 3 by allowing the laser slit light L1 in a lateral direction to scan in a longitudinal direction.

摘要翻译： 本发明的一个目的是提供一种用于与测量对象的表面形状无关地精确地测量测量对象的三维形状的方法，并且其另一个目的是缩短从测量对象的测量开始的时间，直到 获得三维形状数据，以便执行有效的测量操作。 在测量测量对象的三维形状的三维测量系统1中，放置两个三维测量装置10,20。 三维测量装置10通过允许沿纵向的激光狭缝光L1沿横向扫描来测量放置在测量空间3中的测量对象。 此外，三维测量装置20通过使激光狭缝光L1在横向上沿纵向扫描来测量放置在测量空间3中的测量对象。

公开(公告)号：US09435018B2

公开(公告)日：2016-09-06

申请号：US13990078

申请日：2011-07-06

申请人： Masanari Watanabe ,  Yoshihisa Abe

发明人： Masanari Watanabe ,  Yoshihisa Abe

IPC分类号： C23C8/64

CPC分类号： C23C8/64

摘要： Provided is a method for carburizing a tantalum container which can easily control the carburization thicknesses of various portions of the tantalum container and carburize the tantalum container with a uniform thickness. A method for carburizing a tantalum container 1 made of tantalum or a tantalum alloy to allow carbon to penetrate the tantalum container 1 includes the steps of: supporting the tantalum container 1 on a support member 5, 6 provided in a chamber 3 and setting the tantalum container 1 in the chamber 3; and reducing the pressure inside the chamber 3 and heating the interior of the chamber 3, wherein a carbon source is placed in the vicinity of a portion of the tantalum container 1 hard to carburize.

摘要翻译： 本发明提供一种能够容易地控制钽容器的各部分的渗碳厚度并以均匀厚度渗碳钽容器的钽容器渗碳的方法。 将由钽或钽合金制成的钽容器1渗碳以使碳贯穿钽容器1的方法包括以下步骤：将钽容器1支撑在设置在腔室3中的支撑构件5,6上，并将钽 容器1在腔室3中; 并且减小室3内的压力并加热室3的内部，其中将碳源放置在钽容器1的一部分附近难以渗碳。

公开(公告)号：US20120067462A1

公开(公告)日：2012-03-22

申请号：US13322936

申请日：2010-05-25

申请人： Yoshihisa Abe ,  Masanari Watanabe ,  Osamu Tamura

发明人： Yoshihisa Abe ,  Masanari Watanabe ,  Osamu Tamura

IPC分类号： C23C8/64

CPC分类号： C23C8/64

摘要： Provided is a method for carburizing a tantalum member whereby the tantalum member is less deformed by carburization and can be carburized with good flatness of the planar part thereof and in a uniform manner. The method is a method for subjecting a tantalum member 1 made of tantalum or a tantalum alloy and having a planar part 1a to a carburization process for allowing carbon to penetrate the member 1 from the surface toward the inner portion thereof and includes the steps of: setting the tantalum member 1 in a chamber 3 containing a carbon source by supporting the planar part 1a on a plurality of support rods 6 tapered at distal ends 6a thereof; and subjecting the tantalum member 1 to a carburization process by reducing in pressure and heating the interior of the chamber 3 to allow carbon derived from the carbon source to penetrate the tantalum member 1 from the surface thereof.

摘要翻译： 提供了一种钽构件的渗碳方法，由此钽构件通过渗碳而变形较小，并且可以以均匀的方式使其平面部分具有良好的平坦度渗碳。 该方法是使由钽或钽合金制成的具有平面部分1a的钽元件1经受渗碳处理以使碳从表面向内部渗入元件1的方法，包括以下步骤： 将钽构件1设置在容纳碳源的室3中，通过将平面部1a支撑在多个在其远端6a处成锥形的支撑杆6上; 并且通过降低压力并对室3的内部进行加热，使钽构件1进行渗碳处理，以使来自碳源的碳从其表面渗入钽构件1。

公开(公告)号：US07764386B2

公开(公告)日：2010-07-27

申请号：US11527283

申请日：2006-09-26

申请人： Shinichi Horita ,  Yoshihisa Abe

发明人： Shinichi Horita ,  Yoshihisa Abe

IPC分类号： G01B11/24

CPC分类号： G01B11/25 ,  G01B11/002

摘要： A method and system are provided which can easily determine relative positions and postures of a three-dimensional measurement device and an object when the measurement device is used to measure the object using a manipulator. The method includes fixing one of the measurement device and the object, supporting the other at a support point with the manipulator so that a position and support posture of the other can be changed, conducting first measurement with the support point being set to first position and posture, changing the support point to second position and posture so that the second position is a position where the posture is changed, about a reference position within a measurable area of the measurement device in the first measurement, to an opposite side by a degree equal to a portion corresponding to a change from the first posture to the second posture, and conducting second measurement.

摘要翻译： 提供了一种方法和系统，其可以容易地确定当使用测量装置使用操纵器测量物体时三维测量装置和物体的相对位置和姿势。 所述方法包括固定所述测量装置和所述物体中的一个，在所述操纵器的支撑点处支撑另一个，使得可以改变所述另一个的位置和支撑姿势，在所述支撑点被设置为第一位置的情况下进行第一测量，以及 将支撑点改变为第二位置和姿势，使得第二位置是在第一测量中围绕测量装置的可测量区域内的参考位置改变姿势的位置，相对于等于 到对应于从第一姿势到第二姿势的变化的部分，并进行第二测量。

公开(公告)号：US07684613B2

公开(公告)日：2010-03-23

申请号：US11439338

申请日：2006-05-23

申请人： Koji Harada ,  Yoshihisa Abe ,  Takayuki Mukai

发明人： Koji Harada ,  Yoshihisa Abe ,  Takayuki Mukai

IPC分类号： G06K9/00 ,  G01C11/12 ,  G01C3/00

CPC分类号： G06T7/33

摘要： In a method for aligning three-dimensional shape data obtained by performing a three-dimensional measurement of an object, photogrammetry of the object with a target mark is performed to obtain a three-dimensional position and a normal vector of the target mark by a calculation, and the three-dimensional measurement of the object is performed to obtain a three-dimensional position and a normal vector of the target mark. Then, determined is a correspondence between the three-dimensional position of the target mark obtained by the photogrammetry and the three-dimensional position of the target mark obtained by the three-dimensional measurement, by using the three-dimensional position and the normal vector of the target mark obtained by the photogrammetry and those of the target mark obtained by the three-dimensional measurement, and three-dimensional shape data obtained by the three-dimensional measurement is aligned based on the correspondence between the three-dimensional-positions of the target marks.

摘要翻译： 在通过对物体进行三维测量而获得的三维形状数据进行对准的方法中，进行具有目标标记的物体的摄影测量，以通过计算得到目标标记的三维位置和法线矢量 ，并且执行对象的三维测量以获得目标标记的三维位置和法线向量。 然后，通过使用三维位置和法线矢量，确定通过摄影测量法获得的目标标记的三维位置与通过三维测量获得的目标标记的三维位置之间的对应关系 通过摄影测量获得的目标标记和通过三维测量获得的目标标记的目标标记和通过三维测量获得的三维形状数据基于目标的三维位置之间的对应关系 分数。