摘要:
Several embodiments of jet propelled watercraft including steering rudders pivotally supported by the steering nozzle of the jet propulsion unit for providing a steering affect at low speeds and when coasting. The steering rudder is selectively moveable between its steering position and non-steering position so as to permit unincumbered high speed operation. An arrangement is incorporated that permits the rudder to pivot automatically from its steering position to an out of the way position when an underwater obstacle is struck.
摘要:
A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.
摘要:
A liquid crystal display panel and a method of driving the display panel are disclosed. The display panel and the driving method can reduce the leakage of a gate driving voltage to a first pixel electrode due to the parasitic capacitance of a thin film transistor, and can lessen an adverse effect of noise which is generated at a second pixel electrode by cancelling out the capacitive coupling to the first pixel electrode, on an image displayed by the display panel.
摘要:
A remote control device has a transmitter provided with a transmission circuit for producing a remote control signal, a first capacitor of small capacity upon discharging to drive the transmission circuit, a second capacitor of large capacity upon discharging to charge the first capacitor, and a pair of terminals for charging the second capacitor from the outside of the transmitter.
摘要:
It is an object of the present invention to provide a plasma display panel with an improved panel structure for improving a discharge time-lag and, more particularly, to provide a plasma display panel with a new protective film structure, the plasma display panel having uniformed panel properties suitable for mass production with a high yield.A PDP of the present invention which provides a pair of substrate assemblies opposed to each other sandwiching discharge spaces formed to seal a discharge gas therein, wherein one of the pair of substrate assemblies comprises: display electrodes arranged on a substrate; a dielectric layer for covering the display electrodes; and a protective layer for covering the dielectric layer, the protective layer is configured so that a plurality of MgO single crystals are adhered to an MgO film in such a manner that crystal orientations of the plurality of MgO single crystals are aligned in one direction, and a value which is three times of a standard deviation of coverage factors of the MgO single crystals on the MgO film, divided by a mean value of the coverage factors is 20% or less.
摘要:
As a method for constituting a pre-metal interlayer insulating film, such method is considered as forming a CVD silicon oxide-based insulating film having good filling properties of a silicon oxide film by ozone TEOS, reflowing the film at high temperatures to planarize it, then stacking a silicon oxide film having good CMP scratch resistance by plasma TEOS, and, further, planarizing it by CMP. However, it was made clear that, in a process for forming a contact hole, crack in the pre-metal interlayer insulating film is exposed in the contact hole, into which barrier metal intrudes to cause short-circuit defects.In the present invention, in the pre-metal process, after forming the ozone TEOS film over an etch stop film, the ozone TEOS film is once etched back so as to expose the etch stop film over a gate structure, and, after that, a plasma TEOS film is formed over the remaining ozone TEOS film, and then the plasma TEOS film is planarized by CMP.
摘要:
To provide a plasma display panel of improving a discharge time-lag.A plasma display panel of the present invention is characterized in that it comprises a pair of substrate assemblies opposed to each other sandwiching discharge spaces formed to seal a discharge gas therein, wherein one of the pair of substrate assemblies comprises: display electrodes arranged on a substrate; a dielectric layer for covering the display electrodes; and a protective layer for covering the dielectric layer, and the protective layer is configured so that a plurality of MgO single crystals are adhered to an MgO film in such a manner that crystal orientations of the plurality of MgO single crystals are aligned in one direction.
摘要:
As a method for constituting a pre-metal interlayer insulating film, such method is considered as forming a CVD silicon oxide-based insulating film having good filling properties of a silicon oxide film by ozone TEOS, reflowing the film at high temperatures to planarize it, then stacking a silicon oxide film having good CMP scratch resistance by plasma TEOS, and, further, planarizing it by CMP. However, it was made clear that, in a process for forming a contact hole, crack in the pre-metal interlayer insulating film is exposed in the contact hole, into which barrier metal intrudes to cause short-circuit defects.In the present invention, in the pre-metal process, after forming the ozone TEOS film over an etch stop film, the ozone TEOS film is once etched back so as to expose the etch stop film over a gate structure, and, after that, a plasma TEOS film is formed over the remaining ozone TEOS film, and then the plasma TEOS film is planarized by CMP.
摘要:
A technique which can improve manufacturing yield and product reliability is provided in a semiconductor device having a triple well structure. An inverter circuit which includes an n-channel type field effect transistor formed in a shallow p-type well and a p-channel type field effect transistor formed in a shallow n-type well, and does not contribute to circuit operations is provided in a deep n-type well formed in a p-type substrate; the shallow p-type well is connected to the substrate using a wiring of a first layer; and the gate electrode of the p-channel type field effect transistor and the gate electrode of the n-channel type field effect transistor are connected to the shallow n-type well using a wiring of an uppermost layer.
摘要:
A display device including: a display portion with gate lines to which scanning signals are fed, a plurality of data lines to which picture image signals are fed, wherein the gate lines and data lines are crossed with each other in a matrix shape, TFTs and OLED elements disposed in regions surrounded by the gate lines and data lines; a scanning line driving circuit which feeds the scanning signals for the gate lines; a data line driving circuit which feeds the picture image signals for the data lines; a display control controller which provides timing control signals to the scanning line driving circuit and the data line driving circuit and further provides the picture image signals to the data line driving circuit; a timing regulation circuit which regulates the timing (clock frequency) of the timing control signals; and a picture image memory which stores the picture image signals.