GAS DELIVERY MODULE
    33.
    发明申请
    GAS DELIVERY MODULE 审中-公开

    公开(公告)号:US20200343103A1

    公开(公告)日:2020-10-29

    申请号:US16926422

    申请日:2020-07-10

    Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

    SEMICONDUCTOR PROCESSING SYSTEM
    34.
    发明申请

    公开(公告)号:US20200185260A1

    公开(公告)日:2020-06-11

    申请号:US16706115

    申请日:2019-12-06

    Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.

    FLOW CONTROL FEATURES OF CVD CHAMBERS
    35.
    发明申请

    公开(公告)号:US20200149166A1

    公开(公告)日:2020-05-14

    申请号:US16745141

    申请日:2020-01-16

    Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    COMBINED INDUCTIVE AND CAPACITIVE SOURCES FOR SEMICONDUCTOR PROCESS EQUIPMENT
    38.
    发明申请
    COMBINED INDUCTIVE AND CAPACITIVE SOURCES FOR SEMICONDUCTOR PROCESS EQUIPMENT 审中-公开
    用于半导体工艺设备的组合电感和电容源

    公开(公告)号:US20150279623A1

    公开(公告)日:2015-10-01

    申请号:US14224951

    申请日:2014-03-25

    Inventor: Qiwei LIANG

    CPC classification number: H01J37/32091 H01J37/321 H01J37/3266

    Abstract: A chamber for processing a substrate is provided. The chamber includes a chamber body having one or more sidewalls and a bottom with a substrate support disposed inside the chamber body. The chamber also includes a showerhead disposed above the substrate support. The showerhead includes a showerhead faceplate that faces the substrate support and is electrically coupled to a capacitive RF power source. A space between the substrate support and the showerhead faceplate defines a processing volume. The chamber further includes one or more coils disposed outside the processing volume at a vertical location between the substrate support and the showerhead. The one or more coils are electrically coupled to one or more inductive RF power sources.

    Abstract translation: 提供了一种用于处理衬底的腔室。 该室包括具有一个或多个侧壁的室主体和设置在室主体内部的具有基板支撑件的底部。 该室还包括设置在基板支撑件上方的喷头。 淋浴头包括面向基板支撑件并与电容式RF电源电耦合的喷头面板。 衬底支撑件和喷头面板之间的空间限定了处理量。 腔室还包括一个或多个线圈,其设置在处理容积的外侧,位于衬底支撑件和喷头之间的垂直位置处。 一个或多个线圈电耦合到一个或多个感应RF电源。

    FLOW CONTROL FEATURES OF CVD CHAMBERS
    39.
    发明申请
    FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
    CVD气泡流量控制特征

    公开(公告)号:US20150013793A1

    公开(公告)日:2015-01-15

    申请号:US14481774

    申请日:2014-09-09

    Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    Abstract translation: 提供了用于气体分配组件的装置和方法。 一方面,提供了一种气体分配组件,包括环形体,该环形体包括具有内环形壁,外壁,上表面和底表面的环形环,形成在上表面中的上凹部,以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板,包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板,所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准,以及形成在第二孔之间并穿过底板的多个第三孔,底板密封地联接到上板,以将多个第一和第二孔与多个 第三孔。

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