公开(公告)号：US20140158048A1

公开(公告)日：2014-06-12

申请号：US14179143

申请日：2014-02-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Maosheng ZHAO ,  Juan Carlos ROCHA- ALVAREZ ,  Inna SHMURUN ,  Soovo SEN ,  Mao D. LIM ,  Shankar VENKATARAMAN ,  Ju-Hyung LEE

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/458 ,  C23C16/46 ,  H01J37/32082 ,  H01J37/32862 ,  H01L21/67103

Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Abstract translation: 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。

公开(公告)号：US20140271097A1

公开(公告)日：2014-09-18

申请号：US14188344

申请日：2014-02-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan WANG ,  Xinglong CHEN ,  Zihui LI ,  Hiroshi HAMANA ,  Zhijun CHEN ,  Ching-Mei HSU ,  Jiayin HUANG ,  Nitin K. INGLE ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN ,  Randhir THAKUR

IPC: H01L21/677

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US20190048470A1

公开(公告)日：2019-02-14

申请号：US16164392

申请日：2018-10-18

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Shankar VENKATARAMAN ,  Jay D. PINSON, II ,  Jang-Gyoo YANG ,  Nitin Krishnarao INGLE ,  Qiwei LIANG

IPC: C23C16/56 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  C23C16/44 ,  H01L21/02 ,  C23C16/46 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US20220341042A1

公开(公告)日：2022-10-27

申请号：US17861750

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Shankar VENKATARAMAN ,  Jay D. PINSON, II ,  Jang-Gyoo YANG ,  Nitin K. INGLE ,  Qiwei LIANG

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US20200149166A1

公开(公告)日：2020-05-14

申请号：US16745141

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Kien N. CHUC ,  Qiwei LIANG ,  Hanh D. NGUYEN ,  Xinglong CHEN ,  Matthew MILLER ,  Soonam PARK ,  Toan Q. TRAN ,  Adib M. KHAN ,  Jang-Gyoo YANG ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/452

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US20170121813A1

公开(公告)日：2017-05-04

申请号：US15408065

申请日：2017-01-17

Applicant: Applied Materials, Inc.

Inventor： Maosheng ZHAO ,  Juan Carlos ROCHA-ALVAREZ ,  Inna SHMURUN ,  Soovo SEN ,  Mao D. LIM ,  Shankar VENKATARAMAN ,  Ju-Hyung LEE

IPC: C23C16/44 ,  C23C16/458 ,  H01L21/67 ,  C23C16/46

CPC classification number: C23C16/4405 ,  C23C16/458 ,  C23C16/46 ,  H01J37/32082 ,  H01J37/32862 ,  H01L21/67103

Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

公开(公告)号：US20150329970A1

公开(公告)日：2015-11-19

申请号：US14577828

申请日：2014-12-19

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Shankar VENKATARAMAN ,  Jay D. PINSON, II ,  Jang-Gyoo YANG ,  Nitin Krishnarao INGLE ,  Qiwei LIANG

IPC: C23C16/56 ,  H01L21/677 ,  C23C16/46 ,  H01L21/02 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/56 ,  C23C16/44 ,  C23C16/45565 ,  C23C16/46 ,  H01L21/02282 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67778 ,  H01L21/68742 ,  H01L21/68785

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract translation: 本公开的实施例一般涉及一次批处理室，其适于一次同时固化多个基板。 批处理室包括各自独立温度控制的多个处理子区域。 批处理室可以包括第一和第二子处理区域，每个子处理区域由批处理室外部的基板输送装置维护。 此外，安装在分批固化室的装载开口上的开槽盖减少了在装载和卸载期间进入室的环境空气的影响。

公开(公告)号：US20150013793A1

公开(公告)日：2015-01-15

申请号：US14481774

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Kien N. CHUC ,  Qiwei LIANG ,  Hanh D. NGUYEN ,  Xinglong CHEN ,  Matthew MILLER ,  Soonam PARK ,  Toan Q. TRAN ,  Adib KHAN ,  Jang-Gyoo YANG ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/85938

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Abstract translation: 提供了用于气体分配组件的装置和方法。 一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个 第三孔。