公开(公告)号：US20230215728A1

公开(公告)日：2023-07-06

申请号：US18149700

申请日：2023-01-04

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/20 ,  H01L29/423 ,  H01L29/775 ,  H01L29/66

CPC classification number: H01L21/0262 ,  H01L29/0673 ,  H01L29/2003 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/0254 ,  H01L29/66469

Abstract: Methods for forming a semiconductor structure including a gallium nitride dipole layer are disclosed. An exemplary method includes using a cyclical deposition process to deposit a dipole layer comprising gallium nitride over a surface of a gate dielectric. The cyclical deposition process can include providing a gallium precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures.

公开(公告)号：US20230175127A1

公开(公告)日：2023-06-08

申请号：US18074629

申请日：2022-12-05

Applicant: ASM IP Holding B.V.

Inventor： Todd Dunn ,  Paul Ma

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4481 ,  C23C16/45561 ,  C23C16/52

Abstract: Herein disclosed are systems and methods related to remote delivery systems using solid source chemical bulk fill vessels. The delivery system can include a vapor deposition reactor, two or more bulk fill vessels remote from the vapor deposition reactor, an interconnect line, a line heater, and a gas panel comprising one or more valves. Each bulk fill vessel is configured to hold solid source chemical reactant therein. The bulk fill vessels can each include fluid outlets. The interconnect line can fluidly connect the vapor deposition reactor with each bulk fill vessel. The line heater can heat at least a portion of the interconnect line to at least a minimum line temperature. The one or more valves of the gas panel can switch a flow of vaporized chemical reactant through the interconnect line from being from one fluid outlet to being from another fluid outlet.

公开(公告)号：US20230160057A1

公开(公告)日：2023-05-25

申请号：US17989760

申请日：2022-11-18

Applicant: ASM IP Holding B.V.

Inventor： Jiyeon Kim ,  YoungChol Byun ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: C23C16/14 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/768

CPC classification number: C23C16/14 ,  H01L21/32051 ,  H01L21/67103 ,  H01L21/76837

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.

公开(公告)号：US20220351958A1

公开(公告)日：2022-11-03

申请号：US17859929

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34 ,  H01L21/687

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US11424119B2

公开(公告)日：2022-08-23

申请号：US16801910

申请日：2020-02-26

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  C23C16/34 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  H01L21/687 ,  H01L21/67

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US20220018025A1

公开(公告)日：2022-01-20

申请号：US17376336

申请日：2021-07-15

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Charith Eranga Nanayakkara

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/14 ,  C23C16/34 ,  C23C16/32 ,  C23C16/52

Abstract: Methods and systems for forming transition metal layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.

公开(公告)号：US20210371978A1

公开(公告)日：2021-12-02

申请号：US17329829

申请日：2021-05-25

Applicant: ASM IP HOLDING B.V.

Inventor： Eric James Shero ,  Dieter Pierreux ,  Bert Jongbloed ,  Werner Knaepen ,  Charles Dezelah ,  Qi Xie ,  Petri Raisanen ,  Hannu A. Huotari ,  Paul Ma ,  Vamsi Paruchuri

IPC: C23C16/455 ,  C23C16/34

Abstract: Direct liquid injection systems and vapor deposition systems including direct liquid injection systems are disclosed. Exemplary direct liquid injection systems and related vapor deposition systems can be configured for forming vanadium containing layer on a substrate by cyclical deposition processes.

公开(公告)号：US20210249263A1

公开(公告)日：2021-08-12

申请号：US17170742

申请日：2021-02-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Sol Kim ,  Ying-Shen Kuo ,  Michael Schmotzer ,  Eric James Shero ,  Paul Ma

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

公开(公告)号：US20210071301A1

公开(公告)日：2021-03-11

申请号：US17011833

申请日：2020-09-03

Applicant: ASM IP HOLDING B.V.

Inventor： Paul Ma ,  Carl Louis White ,  Eric James Shero

IPC: C23C16/455

Abstract: Herein disclosed are systems and methods related to solid source chemical intermediate fill vessels. The fill vessel can include a proximate end, a distal end, and a base disposed at the proximate end that is configured to hold solid source chemical reactant therein. The intermediate fill vessel can further include a lid at the distal end comprising a second thermal conductor. The lid can include a chemical inlet, a carrier gas inlet, and a chemical outlet. The fill vessel can further include an intermediate layer that is disposed between the base and the lid. The intermediate layer may include an insulator that is configured to reduce heat flow between the base and the lid.

公开(公告)号：US20200286726A1

公开(公告)日：2020-09-10

申请号：US16801910

申请日：2020-02-26

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/768 ,  H01L21/687 ,  C23C16/455 ,  C23C16/34

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.