公开(公告)号：US12055863B2

公开(公告)日：2024-08-06

申请号：US18139459

申请日：2023-04-26

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest

IPC: G03F7/20 ,  G03F7/00 ,  H01L23/00

CPC classification number: G03F7/70783 ,  G03F7/70033 ,  H01L23/562

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

公开(公告)号：US20230260782A1

公开(公告)日：2023-08-17

申请号：US18305875

申请日：2023-04-24

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/02211 ,  H01L21/02274

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US20230259043A1

公开(公告)日：2023-08-17

申请号：US18139459

申请日：2023-04-26

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest

IPC: G03F7/00 ,  H01L23/00

CPC classification number: G03F7/70783 ,  H01L23/562 ,  G03F7/70033

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

公开(公告)号：US20230227965A1

公开(公告)日：2023-07-20

申请号：US18153575

申请日：2023-01-12

Applicant: ASM IP Holding, B.V.

Inventor： Shaoren Deng ,  David Kurt de Roest ,  Vincent Vandalon ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Marko Tuominen

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/455 ,  C23C16/513 ,  C23C16/56

CPC classification number: C23C16/042 ,  C23C16/0272 ,  C23C16/0227 ,  C23C16/45523 ,  C23C16/513 ,  C23C16/56

Abstract: The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.

公开(公告)号：US11094546B2

公开(公告)日：2021-08-17

申请号：US16517122

申请日：2019-07-19

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt de Roest

IPC: H01L21/285 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  C23C16/06 ,  C23C16/455 ,  H01L21/48 ,  C23C16/04 ,  H01L21/321 ,  C23C16/02 ,  C23C16/08

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20190109009A1

公开(公告)日：2019-04-11

申请号：US15726222

申请日：2017-10-05

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt de Roest

IPC: H01L21/285 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/3205 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455 ,  H01L21/48 ,  H01L21/768

CPC classification number: H01L21/28562 ,  C23C16/0209 ,  C23C16/04 ,  C23C16/047 ,  C23C16/06 ,  C23C16/08 ,  C23C16/45527 ,  H01L21/28229 ,  H01L21/30655 ,  H01L21/32051 ,  H01L21/4846 ,  H01L21/76879

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.