利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

96 条记录 (耗时 0.026 秒)

    High TC superconducting film
    31.
    发明授权
    High TC superconducting film 失效
    高TC超导薄膜

    公开(公告)号：US5286712A

    公开(公告)日：1994-02-15

    申请号：US953861

    申请日：1992-09-30

    申请人： Nobuhiko Fujita ,  Tadakazu Kobayashi ,  Hideo Itozaki ,  Saburo Tanaka ,  Shuji Yazu ,  Tetsuji Jodai

    发明人： Nobuhiko Fujita ,  Tadakazu Kobayashi ,  Hideo Itozaki ,  Saburo Tanaka ,  Shuji Yazu ,  Tetsuji Jodai

    IPC分类号： C04B35/45 ,  H01L39/12 ,  H01L39/24 ,  H01L39/00

    CPC分类号： C04B35/4512 ,  C04B35/4504 ,  H01L39/126 ,  H01L39/2419 ,  H01L39/2435 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/73 ,  Y10S505/731 ,  Y10S505/732 ,  Y10S505/742 ,  Y10S505/779 ,  Y10S505/78 ,  Y10S505/783

    摘要： This invention relates to new superconducting material having a composition represented by the general formula:A.sub.u B.sub.v C.sub.w D.sub.x E.sub.yin which,"A" represents one element selected from a group consisting of IIa group and IIIa group of the Periodic Table,"B" represents one element selected from a group consisting of IIa group and IIIa group of the Periodic Table and may be same as "A","C" represents at least one element selected from a group consisting of vanadium (V), tantalum (Ta), niobium (Nb), chromium (Cr), gallium (Ga), indium (In), cadmium (Cd), tin (Sn), thallium (Tl), lead (Pb), molybdenum (Mo), tungsten (W) and zinc (Zn),"D" represents one element selected from a group consisting of Ib group, IIb group, IIIb group and VIII group of the Periodic Table,"E" represents at least one element selected from a group consisting of oxygen (O), boron (B), carbon (C), nitrogen (N), fluorine (F) and sulfur (S), andeach of "u", "v", "w" and "x" represent a number selected in a range of from 0 to 1, and "y" represent a number which is selected from a range of from 1 to 4. The superconducting material may be perovskite type oxide.

    摘要翻译： 本发明涉及具有由以下通式表示的组成的新型超导材料：AuBvCwDxEy，其中“A”表示选自周期表的IIa族和IIIa族的一种元素，“B”表示选自 由周期表的IIa族和IIIa族组成的组，与“A”相同，“C”表示选自钒（V​​），钽（Ta），铌（Nb） ，铬（Cr），镓（Ga），铟（In），镉（Cd），锡（Sn），铊（Tl），铅（Pb），钼（Mo），钨（W） 中，“D”表示选自周期表的Ib组，IIb组，IIIb组和VIII组中的一种元素，“E”表示选自氧（O），硼（ B），碳（C），氮（N），氟（F）和硫（S），“u”，“v”，“w”和“x”分别表示 0到1 ，y表示从1〜4的范围选择的数。超导材料可以是钙钛矿型氧化物。

    Method for forming electrode for electrical connections to oxide super-conductor
    32.
    发明授权
    Method for forming electrode for electrical connections to oxide super-conductor 失效
    用于形成电连接到氧化物超导体的电极的方法

    公开(公告)号：US5240905A

    公开(公告)日：1993-08-31

    申请号：US827185

    申请日：1992-01-28

    申请人： Saburo Tanaka ,  Hideo Itozaki ,  Shuji Yazu

    发明人： Saburo Tanaka ,  Hideo Itozaki ,  Shuji Yazu

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2474 ,  H01L2924/0002 ,  Y10S428/93 ,  Y10S505/701 ,  Y10T428/12611 ,  Y10T428/12889 ,  Y10T428/12896

    摘要： A metal electrode formed on an oxide superconductor for electric connection to the oxide superconductor, includes a first layer of Ag in direct contact with the oxide superconductor, and a second layer formed on the first layer. The second layer is formed of noble metal excluding Ag. The metal electrode can be formed by forming a first layer of Ag to cover a whole surface of the oxide superconductor layer, and forming a second layer of noble metal excluding Ag, to cover a whole surface of the first layer, thereby to form a double metal layer, and patterning the double metal layer so as to form a metal electrode composed of the double metal layer.

    摘要翻译： 形成在与氧化物超导体电连接的氧化物超导体上的金属电极包括与氧化物超导体直接接触的第一Ag层，以及形成在第一层上的第二层。 第二层由不含Ag的贵金属形成。 金属电极可以通过形成第一层Ag以覆盖氧化物超导体层的整个表面，并且形成除Ag之外的第二层贵金属以覆盖第一层的整个表面，从而形成双重的 金属层，图案化双金属层，形成由双金属层构成的金属电极。

    Process and system for preparing a superconducting thin film of oxide
    34.
    发明授权
    Process and system for preparing a superconducting thin film of oxide 失效
    用于制备氧化物超薄膜的方法和系统

    公开(公告)号：US5143896A

    公开(公告)日：1992-09-01

    申请号：US604896

    申请日：1990-10-31

    申请人： Keizo Harada ,  Hideo Itozaki ,  Shuji Yazu

    发明人： Keizo Harada ,  Hideo Itozaki ,  Shuji Yazu

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2432 ,  Y10S505/729 ,  Y10S505/73 ,  Y10S505/786 ,  Y10S505/819

    摘要： In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is exited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporally after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before next film-forming operation is restarted.

    Method of synthesizing diamond
    40.
    发明授权
    Method of synthesizing diamond 失效
    金刚石合成方法

    公开(公告)号：US4632817A

    公开(公告)日：1986-12-30

    申请号：US717074

    申请日：1985-03-28

    申请人： Shuji Yazu ,  Kazuo Tsuji ,  Akito Yoshida

    发明人： Shuji Yazu ,  Kazuo Tsuji ,  Akito Yoshida

    IPC分类号： B01J3/06 ,  C01B31/06

    CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685

    摘要： A diamond synthesizing method carried out under diamond-stable superhigh pressure and temperature by employing a synthesizing vessel (10) having a plurality of synthesizing chambers (10a, 10b) divided by a partition layer (16) in the vertical direction. Solvent metals (13a, 13b) respectively placed in the upwardly arranged synthesizing chamber (10a) and the downwardly arranged synthesizing chamber (10b) are prepared so that the solvent metals are different in eutectic temperature with carbon from each other. In the respective synthesizing chambers (10a, 10b), carbon sources (12a, 12b) are placed in contact with highest-temperature portions of the respective solvent metals (13a, 13b) and seed crystals (11a, 11b) are placed in contact with lowest-temperature portions thereof. The synthesizing vessel (10) is provided with a temperature gradient in such directivity that the upper part thereof is at a higher temperature and the lower part is at a lower temperature.

    摘要翻译： 一种在金刚石稳定的超高压和高温下进行的金刚石合成方法，该方法是在垂直方向上使用具有由分隔层（16）分割的多个合成室（10a，10b）的合成容器（10）。 制备分别放置在向上排列的合成室（10a）和向下排列的合成室（10b）中的溶剂金属（13a，13b），使得溶剂金属在共晶温度下与碳彼此不同。 在各合成室（10a，10b）中，碳源（12a，12b）与各溶剂金属（13a，13b）的最高温度部分接触放置，晶种（11a，11b）与 其最低温度部分。 合成容器（10）具有这样的方向性的温度梯度，使得其上部处于较高温度，下部处于较低温度。