公开(公告)号：US20090236962A1

公开(公告)日：2009-09-24

申请号：US12392691

申请日：2009-02-25

申请人： Akira FUJIMOTO ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

发明人： Akira FUJIMOTO ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

IPC分类号： H01J1/46 ,  B29D11/00

CPC分类号： H01L51/5203 ,  H01L51/5234 ,  H01L2251/5315

摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

公开(公告)号：US09324914B2

公开(公告)日：2016-04-26

申请号：US12712693

申请日：2010-02-25

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0083

摘要： A semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and suitable for lighting instruments such as lights and lamps. The semiconductor device includes a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and penetrate through the metal electrode layer. The metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.

摘要翻译： 即使电力增加也能够保持高亮度强度的半导体发光装置，适用于灯具等照明装置。 半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。 开口的平均直径为10nm〜2μm，贯穿金属电极层。 金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

公开(公告)号：US08921887B2

公开(公告)日：2014-12-30

申请号：US13221319

申请日：2011-08-30

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/38

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

公开(公告)号：US20120132948A1

公开(公告)日：2012-05-31

申请号：US13229972

申请日：2011-09-12

申请人： Shinji Nunotani ,  Masaaki Ogawa ,  Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Takanobu Kamakura

发明人： Shinji Nunotani ,  Masaaki Ogawa ,  Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Takanobu Kamakura

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.

摘要翻译： 根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。 发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。 第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。 第二电极层与第一半导体层电连接。 焊盘电极与第一电极层电连接。 辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。

公开(公告)号：US20120056155A1

公开(公告)日：2012-03-08

申请号：US13037990

申请日：2011-03-01

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/06 ,  H01L33/38 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.

摘要翻译： 半导体发光器件包括结构体，第一电极层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。 第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。 金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。 多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。 至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

公开(公告)号：US20110220936A1

公开(公告)日：2011-09-15

申请号：US12876318

申请日：2010-09-07

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Koji Asakawa

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Koji Asakawa

IPC分类号： H01L33/40 ,  H01L21/283

CPC分类号： H01L33/58 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.

摘要翻译： 根据实施例的半导体发光器件包括衬底，化合物半导体层，设置有特定开口的金属电极层，光提取层和对电极。 光提取层的厚度为20〜120nm，至少部分覆盖金属电极层的金属部分。 否则光提取层具有坚固的结构并且至少部分地覆盖金属电极层的金属部分。 凹凸结构具有突出部，使得它们的顶点以100至600nm的间隔定位，并且来自金属电极层的表面的顶点的高度为200至700nm。

公开(公告)号：US20090042325A1

公开(公告)日：2009-02-12

申请号：US12246099

申请日：2008-10-06

申请人： Akira Fujimoto ,  Koji Asakawa ,  Kenichi Ohashi

发明人： Akira Fujimoto ,  Koji Asakawa ,  Kenichi Ohashi

IPC分类号： H01L21/02

CPC分类号： H01L33/22

摘要： In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.

摘要翻译： 在半导体发光器件中，半导体发光元件具有在其上形成有多个凸起结构的光提取表面。 凸起结构各自具有构成折射率梯度结构的圆锥台面部分，构成衍射光栅结构的圆筒部分和构成折射率梯度结构的锥形部分。 台面部分，圆柱形部分和锥形部分从光提取表面依次排列。 凸结构之间的周期长于发射波长的1 /（外部介质的折射率+凸起结构的折射率）等于或小于发射波长。 圆筒部的圆当量平均直径为台面部的底部的圆当量平均直径的1/3〜9/10。

公开(公告)号：US20050233483A1

公开(公告)日：2005-10-20

申请号：US11056094

申请日：2005-02-14

申请人： Koji Asakawa ,  Kenichi Ohashi ,  Akira Fujimoto ,  Takashi Sasaki

发明人： Koji Asakawa ,  Kenichi Ohashi ,  Akira Fujimoto ,  Takashi Sasaki

IPC分类号： C08F220/28 ,  H01L21/00 ,  H01L21/306 ,  H01L21/308 ,  H01L21/78 ,  H01L33/22

CPC分类号： H01L21/78 ,  C08F220/28 ,  H01L21/30608 ,  H01L21/3081 ,  H01L21/67086 ,  H01L33/22

摘要： Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).

摘要翻译： 公开了一种耐酸腐蚀性材料，其包含具有由以下通式（1）表示的重复单元的化合物：（在通式（1）中，R 1是氢原子或甲基; R 3是选自脂环族基团和芳族基团的环状基团; R 4是极性基团; R 2是代表的基团 由通式（2）表示，j为0或1）:(通式（2）中，R 5为氢原子或甲基）。

公开(公告)号：US08357557B2

公开(公告)日：2013-01-22

申请号：US12717537

申请日：2010-03-04

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/54

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

公开(公告)号：US20120187414A1

公开(公告)日：2012-07-26

申请号：US13439895

申请日：2012-04-05

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa ,  Hidefumi Yasuda ,  Yasuhiko Akaike ,  Takeyuki Suzuki

IPC分类号： H01L33/22 ,  H01L33/30

CPC分类号： H01L33/22 ,  H01L33/005

摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

摘要翻译： 本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。