摘要:
A solid state imaging device composed of a plurality of photo-diodes each of which having a P-N junction. A P-N junction which corresponds to that of a faulty picture cell is destroyed through use of a high energy beam irradiation, such as a laser. Signal data corresponding to that of the destroyed picture cell is detected through use of a voltage comparator which outputs a signal indicative of either a preceding picture cell or that corresponding to a picture cell of a preceding row of picture cells. This system can be used for specific address information. In accordance with the imaging device the defective pixel (picture cell) information appearing in the output signal of the matrix array of photo-diodes, which is at a correspondingly different level from that of ordinary read signals, is detected by a voltage detection circuit and the relief of the defective pixels can be implemented through use of circuits which form the preceding pixel signal information or the pixel signal information corresponding to that of a preceding row. As to implementing the system in connection with a specific address information, the defective pixel signal can also be used as a specific mark representing the display position thereof.
摘要:
Disclosed is an MOS solid-state imaging device including a source-follower FRT amplifier in each picture-cell and a capacitor in each row for differentially directing output signals to cancel offset parameters such as those due to deviations of manufacturing caused during the process.
摘要:
In the interline type charge transfer imaging device, two of the three groups of wiring through which driving pulses are sent to each of three groups of electrodes constituting vertical charge transfer devices are arranged in horizontal direction and the remaining one group of wiring is arranged in vertical direction. Light-shielding layer is installed on the vertically running wires and the electrodes connected with those wires.
摘要:
In a solid-state imaging device wherein filters of the three primary colors in the mosaic filter configuration are stacked on a solid-state imager LSI in which a plurality of picture elements each consisting of a photoelectric conversion element and a scanning element are arrayed in the shape of a matrix; a method of producing a solid-state imaging device wherein the dimensions of filter layout patterns on exposure masks for the respective colors used in case of manufacturing the color filters of:T.sub.R
摘要:
A solid-state color imaging camera comprises three solid-state image sensors each of which has a two-dimensional array of picture elements arranged with respective predetermined pitches in vertical and horizontal directions. The first, second and third image sensors are used for green, red and blue lights. The optical positioning of the first image sensor is shifted with respect to the second and third image sensors by the half of the picture element pitch in the vertical direction.
摘要:
In a solid-state imaging device wherein at least one pn-junction photodiode and photo-signal detecting means adjacent thereto are disposed in a surface portion of a semiconductor substrate of one conductivity type, a solid-state imaging device characterized in that at least one window region is disposed within a semiconductor region which constitutes said photodiode and which has the opposite conductivity type to that of said semiconductor substrate, said window region "hollowing" said semiconductor region up to the surface of said semiconductor substrate and being made of a part of said semiconductor substrate.
摘要:
A solid state imaging device that comprises a first, a second, and a third pixel, and a micro lens is provided. The first pixel has a first color filter. The second pixel has a second color filter, of which the color is different from the color of the first color filter. The third pixel has a third color filter, of which the color is different from the colors of the first color filter and the second color filter. The micro lens covers the first, the second, and the third pixels neighboring each other.
摘要:
A display device includes a dynamic ratio less shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratio less shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要:
A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要:
A liquid crystal display device having a plurality of pixels arranged in a matrix, a plurality of video signal lines for supplying video signal voltages to the plurality of pixels, and a drive circuit which selects a voltage level of a gray scale voltage varying periodically as one of the video signal voltages corresponding to display data to be supplied to one of the plurality of pixels. The drive circuit has a plurality of series combinations of plural processing circuits, wherein each of the plurality of series combinations of plural processing circuits corresponds to one of the plurality of video signal lines, and each of the plural processing circuits comprises a parallel combination of a first switching element and a second switching element. The first and second switching elements are made operative or inoperative as a switch in accordance with different conditions.