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46 条记录 (耗时 0.034 秒)

    Direct reduction apparatus and process
    33.
    发明授权
    Direct reduction apparatus and process 有权
    直接还原装置和工艺

    公开(公告)号：US07947107B2

    公开(公告)日：2011-05-24

    申请号：US12832847

    申请日：2010-07-08

    申请人： Andreas Orth ,  Heinz Eichberger ,  Donald Keith Philp ,  Jeantine Van Gemund, legal representative ,  Rod Dry

    发明人： Andreas Orth ,  Heinz Eichberger ,  Donald Keith Philp ,  Rod Dry

    IPC分类号： C22B13/02

    CPC分类号： C21B13/0033 ,  C21B13/146 ,  F27B15/10 ,  Y02P10/122 ,  Y02P10/126 ,  Y02P10/136

    摘要： An apparatus for reducing a metalliferous material in a fluidized bed includes a vessel for containing the fluidized bed, a mechanism for supplying the metalliferous material, a solid carbonaceous material, an oxygen-containing gas, and a fluidizing gas into the vessel for forming the fluidized bed in the vessel. The oxygen-containing gas supply mechanism includes one or more than one oxygen-containing gas injection lance having a lance tip with an outlet that is positioned for injecting the oxygen-containing gas in a downward flow into the vessel within a range of plus or minus 40° to the vertical.

    摘要翻译： 用于还原流化床中的含金属材料的装置包括用于容纳流化床的容器，用于将含金属材料，固体碳质材料，含氧气体和流化气体供应到用于形成流化床的容器中的机构 在船上的床。 含氧气体供给机构包括一个或多于一个的含氧气体注入喷枪，其具有喷枪头，其具有出口，该出口位于将含氧气体以向下流动的方式注入到容器内，该加载气体在正或负的范围内 40°垂直。

    Method for determining the depth of a buried structure
    34.
    发明授权
    Method for determining the depth of a buried structure 有权
    确定埋藏结构深度的方法

    公开(公告)号：US07307735B2

    公开(公告)日：2007-12-11

    申请号：US10835259

    申请日：2004-04-30

    申请人： Thomas Hecht ,  Uwe Schröder ,  Ulrich Mantz ,  Stefan Jakschik ,  Andreas Orth

    发明人： Thomas Hecht ,  Uwe Schröder ,  Ulrich Mantz ,  Stefan Jakschik ,  Andreas Orth

    IPC分类号： G01B11/02

    CPC分类号： G01N21/211 ,  G01B11/22 ,  G01J3/453

    摘要： The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.

    摘要翻译： 本发明涉及一种用于确定半导体晶片中的掩埋结构的深度的方法。 根据本发明，当半导体晶片在红外范围内被电磁辐射照射时，由掩埋结构引起的半导体晶片的层行为，并且由于与所使用的辐射相比显着更长的辐射波长而产生 掩埋结构的横向尺寸用于通过光谱测量和/或椭偏方法确定掩埋结构的深度。

    Direct Reduction Process and Apparatus
    35.
    发明申请
    Direct Reduction Process and Apparatus 有权
    直接还原过程和设备

    公开(公告)号：US20070256519A1

    公开(公告)日：2007-11-08

    申请号：US11569739

    申请日：2005-05-20

    申请人： Andreas Orth ,  Heinz Eichberger ,  Donald Philp ,  Jeantine Van Gemund ,  Rod Dry

    发明人： Andreas Orth ,  Heinz Eichberger ,  Donald Philp ,  Jeantine Van Gemund ,  Rod Dry

    IPC分类号： C21B13/00

    CPC分类号： C21B13/0033 ,  C21B13/14 ,  C22B5/14 ,  Y02P10/122 ,  Y02P10/126 ,  Y02P10/128 ,  Y02P10/136

    摘要： A direct reduction process for a metalliferous material includes supplying a solid carbonaceous material and an oxygen-containing gas into a fluidized bed in a first vessel and generating heat by reactions between the oxygen-containing gas and the solid carbonaceous material and any other oxidizable solids and gases in the fluidized bed and discharging a hot off-gas stream containing entrained solids. The process also includes supplying the metalliferous material to a fluidized bed in a second vessel and supplying the hot off-gas stream containing entrained solids from the first vessel to the fluidized bed in the second vessel and partially reducing the metalliferous feed material in the solid state in the fluidized bed and discharging a product stream of partially reduced metalliferous material and an off-gas stream containing entrained solids.

    摘要翻译： 用于含金属材料的直接还原方法包括将固体碳质材料和含氧气体供应到第一容器中的流化床中，并通过含氧气体和固体碳质材料和任何其它可氧化固体之间的反应产生热量，以及 流化床中的气体并排出含有夹带固体的热废气流。 该方法还包括将含金属材料供应到第二容器中的流化床，并将含有夹带的固体的热废气流从第一容器提供给第二容器中的流化床，并部分还原固态的含金属进料 在流化床中并排出部分还原的含金属材料的产物流和含有夹带固体的废气流。

    Method for determining the depth of a buried structure
    37.
    发明申请
    Method for determining the depth of a buried structure 有权
    确定埋藏结构深度的方法

    公开(公告)号：US20050003642A1

    公开(公告)日：2005-01-06

    申请号：US10835259

    申请日：2004-04-30

    申请人： Thomas Hecht ,  Uwe Schroder ,  Ulrich Mantz ,  Stefan Jakschik ,  Andreas Orth

    发明人： Thomas Hecht ,  Uwe Schroder ,  Ulrich Mantz ,  Stefan Jakschik ,  Andreas Orth

    IPC分类号： G01B11/22 ,  G01J3/453 ,  G01N21/21 ,  H01L21/337

    CPC分类号： G01N21/211 ,  G01B11/22 ,  G01J3/453

    摘要： The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.

    摘要翻译： 本发明涉及一种用于确定半导体晶片中的掩埋结构的深度的方法。 根据本发明，当半导体晶片在红外范围内被电磁辐射照射时，由掩埋结构引起的半导体晶片的层行为，并且由于与所使用的辐射相比显着更长的辐射波长而产生 掩埋结构的横向尺寸用于通过光谱测量和/或椭偏方法确定掩埋结构的深度。

    Process and apparatus for dedusting a vapor gas mixture
    39.
    发明授权
    Process and apparatus for dedusting a vapor gas mixture 有权
    用于除尘蒸气混合物的方法和装置

    公开(公告)号：US09221062B2

    公开(公告)日：2015-12-29

    申请号：US14351883

    申请日：2012-10-10

    申请人： Hermann Sieger ,  Christian Binder ,  Nikola Anastasijevic ,  Andreas Orth

    发明人： Hermann Sieger ,  Christian Binder ,  Nikola Anastasijevic ,  Andreas Orth

    IPC分类号： B03C3/00

    CPC分类号： B03C3/00

    摘要： A process for dedusting a dust laden vapor gas mixture (VGM) obtained by pyrolysis of a material containing hydrocarbons includes treating the dust laden VGM in a dry electrostatic precipitator at a temperature in a range from 380 to 480° C. so as to separate dust from the VGM. Then, the VGM is cooled to a temperature in a range from 310 to 360° C.

    摘要翻译： 通过对含有烃的材料进行热解而获得的含灰尘蒸汽气体混合物（VGM）的除尘方法包括在380-480℃的温度范围内，在干式静电除尘器中处理载有灰尘的VGM，以分离灰尘 来自VGM。 然后，将VGM冷却至310〜360℃的温度。

    Process and plant or refining raw materials containing organic constituents
    40.
    发明授权
    Process and plant or refining raw materials containing organic constituents 有权
    包含有机成分的工艺和植物或精炼原料

    公开(公告)号：US08936657B2

    公开(公告)日：2015-01-20

    申请号：US12867451

    申请日：2009-02-04

    申请人： Nikola Anastasijevic ,  Michael Missalla ,  Guenter Schneider ,  Andreas Orth

    发明人： Nikola Anastasijevic ,  Michael Missalla ,  Guenter Schneider ,  Andreas Orth

    IPC分类号： C01B3/36 ,  C10G1/02

    CPC分类号： B01J8/1818 ,  B01J2208/00752 ,  C10G1/02

    摘要： A process for refining raw materials containing at least one of oil and bitumen includes supplying the raw materials to a reactor and volatilizing fuel gas in the reactor at a temperature of from 300 to 1000° C. and a pressure of from 0.001 to 1 bar. Solids remaining in the reactor, including non-evaporated fractions of heavy hydrocarbons, are introduced into a furnace. A staged combustion of the non-evaporated fractions of heavy hydrocarbons is performed in a substoichiometric stage and in a superstoichiometric stage in the furnace at a furnace temperature of from 600 to 1500° C. as to obtain hot solids in the furnace. The hot solids are recirculated from the furnace into the reactor. A sealing device separates an oxidizing atmosphere of the furnace from an atmosphere of the reactor.

    摘要翻译： 用于精炼含有油和沥青中的至少一种的原料的方法包括将原料供应到反应器中并在300-1000℃的温度和0.001至1巴的压力下使反应器中的燃料气体挥发。 残留在反应器中的固体，包括重质烃的非蒸发馏分，被引入炉中。 未蒸发馏分的重质烃的分段燃烧是在600至1500℃的炉温下在化学计量阶段和炉中的超化学计量阶段进行的，以便在炉中获得热固体。 热固体从炉再循环到反应器中。 密封装置将炉的氧化气氛与反应器的气氛分离。