公开(公告)号：US06795465B2

公开(公告)日：2004-09-21

申请号：US10120698

申请日：2002-04-11

Applicant: Anthony D. Kurtz ,  Joseph R. Van DeWeert

Inventor： Anthony D. Kurtz ,  Joseph R. Van DeWeert

IPC: H01S316

CPC classification number: C30B29/12 ,  C30B23/00 ,  C30B33/04 ,  H01S3/0612 ,  H01S3/0809 ,  H01S3/163 ,  H01S3/1681 ,  H01S3/2375 ,  H01S3/2383

Abstract: A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.

Abstract translation: 在衬底上生长薄层的离子晶体。 该晶体可以是任何类型的离子晶体，例如氯化钠或氯化钾。 晶体是所选化合物的纯形式，并且可能含有污染物，这些污染物将使所产生的色心的波长发生偏移。 在第一晶体层的顶部，沉积不同类型晶体的第二薄层，例如氟化锂或氟化钠。 当这两层用伽马射线照射时，它们将在辐射的点处形成彩色中心。 由于两个不同的离子晶体中心的晶体性质的差异，它们的色心将处于不同的波长。 当以其独特的吸收频率照射时，两个分离的离子晶体中的每一个将发射不同特征波长的光。 每个层可以分开制作。 顶层的吸收能量大于底层的吸收能，使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。 在两个叠加层中形成F中心的方法有很多种，例如通过加热特定化合物的阴离子层，然后将第二离子晶体沉积在第一离子晶体上，然后沉积 阴离子层在第二个晶体上，然后加热，以产生一个结构，将其延伸到不同的频率。

公开(公告)号：US06577224B2

公开(公告)日：2003-06-10

申请号：US09815101

申请日：2001-03-22

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: H01L1010

CPC classification number: G01L19/0645 ,  G01L23/18 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: An oil filled pressure transducer of the type employing a metal diaphragm has a diaphragm of a greater thickness than a conventional diaphragm. The thick diaphragm exhibits and accommodates extremely large pressures and deflects to cause a lower pressure to be transmitted to the oil. Because of the large thickness of the metal diaphragm, the diaphragm dissipates a predetermined percentage of the applied pressure, whereas a corresponding fraction of the applied pressure is transmitted to the oil and hence to the silicon sensors. In this manner the diaphragm acts as a step-down transformer where a portion of the force or pressure applied to the diaphragm is transmitted to the pressure sensor. The pressure sensor receives a pressure which is a fraction of the applied pressure and the sensor is compensated to produce an output proportional to the actual pressure as applied to the thick diaphragm.

公开(公告)号：US06446510B1

公开(公告)日：2002-09-10

申请号：US09624084

申请日：2000-07-24

Applicant: Anthony D. Kurtz ,  Robert Gardner ,  Richard Martin ,  Lou DeRosa ,  Estelle Anselmo

Inventor： Anthony D. Kurtz ,  Robert Gardner ,  Richard Martin ,  Lou DeRosa ,  Estelle Anselmo

IPC: G01N300

CPC classification number: G01L5/0033 ,  G01L5/0038 ,  G01N2203/0016 ,  G01N2203/0623

Abstract: A force transducer assembly for measuring compressive and tensile loads applied to a force transmission device, the assembly includes a housing, a sleeve assembly and a sensor device. The housing has a hollow interior. The sleeve assembly is coupled within the interior of the housing. The sensor device is secured within the interior of the housing between a portion of the sleeve assembly and a portion of the housing. The sensor device includes first and second sensors each including an isolation diaphragm at least partially defining an oil-filled cavity, and a piezoresistive sensor positioned so as to be effected by a change in pressure in the oil-filled cavity. When a first force is applied to the apparatus in a first direction via the force transmission device, one of the isolation diaphragms is deflectable in response thereto, and when a second force is applied in a second direction opposite to the first direction, the other of the isolation diaphragms is deflectable in response thereto. This causes a corresponding output from the sensor assembly. The first direction exerts a push on the device and the second direction exerts a pull on the device.

Abstract translation: 用于测量施加到力传递装置的压缩和拉伸载荷的力传感器组件，所述组件包括壳体，套筒组件和传感器装置。 外壳有一个中空的内部。 套筒组件联接在壳体的内部。 传感器装置固定在壳体的内部之中，套筒组件的一部分与壳体的一部分之间。 传感器装置包括第一和第二传感器，每个传感器包括至少部分地限定充油空腔的隔离膜片，以及压电传感器，其被定位以便通过充油空腔中的压力变化来实现。 当通过力传递装置向第一方向施加第一力时，隔离隔膜中的一个可响应于该第一方向而偏转，并且当在与第一方向相反的第二方向上施加第二力时，另一方 隔离隔膜可响应于此而偏转。 这将导致传感器组件的相应输出。 第一个方向在设备上施加推力，第二个方向在设备上施加拉力。

公开(公告)号：US06293154B1

公开(公告)日：2001-09-25

申请号：US09459238

申请日：1999-12-10

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: G01L906

CPC classification number: G01L19/02 ,  G01L9/0054

Abstract: A pressure sensing device for producing an output proportional to an applied pressure irrespective of vibration and acceleration of the device, the device including: a first deflecting diaphragm formed in a first wafer and including a first plurality of piezoresistors mounted thereon, the first diaphragm being responsive to the applied pressure and vibration of the device; and, a second deflecting diaphragm formed in the first wafer and including a second plurality of piezoresistors mounted thereon, the second diaphragm being responsive only to vibration of the device; wherein, the first and second pluralities of piezoresistors are electrically coupled together to provide a common output such that they cooperatively at least partially cancel a portion of the common output associated with the vibration of the device.

Abstract translation: 一种压力感测装置，用于产生与所施加的压力成比例的输出，而与装置的振动和加速度无关，该装置包括：第一偏转膜，形成在第一晶片中，并且包括安装在其上的第一多个压敏电阻器，第一膜片响应于 对设备施加的压力和振动; 以及形成在所述第一晶片中并且包括安装在其上的第二多个压敏电阻的第二偏转膜，所述第二膜片仅响应所述装置的振动; 其中，所述第一和第二多个压敏电阻器电耦合在一起以提供公共输出，使得它们协同地至少部分地抵消与所述装置的振动相关联的公共输出的一部分。

公开(公告)号：US06229427B1

公开(公告)日：2001-05-08

申请号：US08897470

申请日：1997-07-21

Applicant: Anthony D. Kurtz ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Alexander A. Ned

IPC: H01C1010

CPC classification number: B81B7/0077 ,  G01L9/0042 ,  G01L9/0055 ,  G01L19/0076 ,  G01L19/0618 ,  G01L19/147

Abstract: A method for sealing a transducer of a type having a diaphragm with an active region and an inactive region, a stress sensing network associated with the active region of the diaphragm, contacts associated with the inactive region of the diaphragm, and lead-outs for coupling the stress sensing network to the contacts. The method comprises oxidizing the transducer to provide a first oxide layer which covers the diaphragm, the stress sensing network, the lead-outs and the contacts. Next, a layer of semiconductive material is deposited over the first oxide layer and is then planarized to provide a planar surface having a substantially flat and bondable surface. Finally, a cover member is bonded to the planar surface of the layer which covers the inactive region of the diaphragm to hermetically seal the stress sensing network and thereby provide a sealed transducer.

Abstract translation: 一种用于密封具有活动区域和非活动区域的膜片的类型的换能器的方法，与隔膜的有源区域相关联的应力感测网络，与隔膜的非活动区域相关联的触点以及用于联接的引出件 应力感应网络接触。 该方法包括氧化换能器以提供覆盖隔膜，应力感测网络，引出线和触点的第一氧化物层。 接下来，将半导体材料层沉积在第一氧化物层上，然后被平坦化以提供具有基本上平坦且可结合的表面的平坦表面。 最后，覆盖部件粘合到覆盖膜片的非活性区域的层的平坦表面上，以密封应力感测网络，从而提供密封的换能器。

公开(公告)号：US06210989B1

公开(公告)日：2001-04-03

申请号：US09398969

申请日：1999-09-17

Applicant: Anthony D. Kurtz ,  Alexander Ned ,  Scott J. Goodman

Inventor： Anthony D. Kurtz ,  Alexander Ned ,  Scott J. Goodman

IPC: H01L2720

CPC classification number: G01L9/0055 ,  G01L19/0084

Abstract: There is disclosed a semiconductor sensor device comprising a semiconductor diaphragm member having a top surface coated with an oxide layer; P+ sensor elements fusion bonded to the oxide layer at a relatively central area of the diaphragm; P+ finger elements fusion bonded to the oxide layer extending from the sensors to an outer contact location of the diaphragm for each finger; and an external rim of P+ material fusion bonded to the oxide layer and surrounding the sensors and fingers. A first glass wafer member is electrostatically bonded at a bottom surface to the fingers and rim to hermetically seal the sensors and fingers of the diaphragm member. The first glass wafer includes a depression above the sensors and has a plurality of apertures, where each aperture is associated with a separate finger at the contact location and each aperture being smaller than the associated finger lining up with the contact location wherein each contact location can be accessed via the associated aperture in the first glass wafer member. A second glass wafer member is sealingly coupled to a top surface of the first glass wafer and has a plurality of apertures aligned with the plurality of apertures of the first glass wafer member and containing a group of hermetically sealed pins for coupling to the contact locations.

Abstract translation: 公开了一种半导体传感器装置，其包括具有涂覆有氧化物层的顶表面的半导体隔膜部件; P +传感器元件在隔膜的相对中心区域处熔合到氧化物层; P +手指元件融合到从传感器延伸到每个手指的隔膜的外部接触位置的氧化物层; 并且P +材料的外缘融合到氧化物层并且围绕传感器和手指。 第一玻璃晶片构件在底面处与手指和边缘静电结合，以气密地密封隔膜构件的传感器和手指。 第一玻璃晶片包括在传感器上方的凹陷部，并且具有多个孔，其中每个孔与接触位置处的单独手指相关联，并且每个孔小于相关联的手指与接触位置对齐，其中每个接触位置可以 通过第一玻璃晶片构件中的相关孔径进入。 第二玻璃晶片构件密封地联接到第一玻璃晶片的顶表面，并且具有与第一玻璃晶片构件的多个孔对准的多个孔，并且包含一组用于联接到接触位置的密封销。

公开(公告)号：US5569626A

公开(公告)日：1996-10-29

申请号：US234307

申请日：1994-04-28

Applicant: Anthony D. Kurtz ,  Joseph S. Shor ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Joseph S. Shor ,  Alexander A. Ned

IPC: H01L31/0232 ,  H01L31/028 ,  H01L21/306

CPC classification number: H01L31/0232 ,  H01L31/028 ,  Y02E10/547 ,  Y10S438/96 ,  Y10T29/42

Abstract: Piezo-optical pressure sensitive devices employing porous semiconductor material as a stress sensitive member. The devices monitor pressure or force applied thereto by detecting a corresponding change in the amount of light absorbed by a porous layer of semiconductive material such as silicon. A pressure or stress signal is thus converted into an optical one. The sensing element of an optical switch embodiment of the device is comprised of a transparent layer of material upon which there is disposed a porous layer of semiconductive material. When unstressed, the porous layer absorbs monochromatic light of a predetermined wavelength. When the porous layer is stressed, a metallized epitaxial layer formed thereon reflects the light back through the transparent layer where it can be detected by a light detection system.

Abstract translation: 使用多孔半导体材料作为应力敏感元件的压电光敏器件。 该装置通过检测由诸如硅的半导体材料的多孔层吸收的光量的相应变化来监测施加到其上的压力或力。 因此，压力或应力信号被转换为光学信号。 装置的光学开关实施例的感测元件由透明的材料层组成，其上设置有多孔半导体材料层。 当不受应力时，多孔层吸收预定波长的单色光。 当多孔层受到应力时，形成在其上的金属化外延层通过透明层反射光，其中它可被光检测系统检测。

公开(公告)号：US5539236A

公开(公告)日：1996-07-23

申请号：US303456

申请日：1994-09-09

Applicant: Anthony D. Kurtz ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Alexander A. Ned

IPC: G01P15/12 ,  H01L29/82

CPC classification number: G01P15/123 ,  Y10S73/01 ,  Y10S73/04

Abstract: An electromechanical transducer is provided, and the process for making it utilizes a piezoresistive element or gage which is dielectrically isolated from a gap spanning member and substrate upon which it is supported. The gage of the invention is a force gage and is derived from a sacrificial wafer by a series of etching and bonding steps which ultimately provide a gage with substantially reduced strain energy requirements.

公开(公告)号：US5428985A

公开(公告)日：1995-07-04

申请号：US191514

申请日：1994-02-03

Applicant: Anthony D. Kurtz ,  Wolf Landmann

Inventor： Anthony D. Kurtz ,  Wolf Landmann

IPC: G01L1/22 ,  G01L9/04 ,  G01M3/32 ,  G01M3/26 ,  G01N27/04

CPC classification number: G01L1/2281 ,  G01L9/045 ,  G01M3/3236

Abstract: An improved gas leak detection apparatus is disclosed for detecting a leak in a gas containing vessel of constant volume which compensates for deviations in behavior of a contained gas from an ideal model. The apparatus incorporates a pressure transducer, an amplifying means and a feedback means and operates to effectively and accurately model the van der Waals equation of state for gasses. The apparatus is adaptable for operation with any number of different gases by simply changing the values of specific circuit elements. The output of the apparatus is proportional to the total number of moles of gas present in the containment vessel at any particular time, and will thus indicate a leak from the vessel upon a reduction in that number of moles, absent an intentional reduction of the mass of gas in the vessel.

Abstract translation: 公开了一种改进的气体泄漏检测装置，用于检测恒定体积的含气体的容器中的泄漏，其补偿所含气体与理想模型的性能偏差。 该装置包括压力传感器，放大装置和反馈装置，并且操作以有效和精确地模拟用于气体的范德华状态方程。 该装置通过简单地改变特定电路元件的值，适用于任意数量的不同气体的操作。 设备的输出与任何特定时间内存在于安全壳中的气体的总摩尔数成比例，并且因此表示在减少该摩尔数时来自容器的泄漏，没有有意的减小质量 的气体。

公开(公告)号：US5386142A

公开(公告)日：1995-01-31

申请号：US58016

申请日：1993-05-07

Applicant: Anthony D. Kurtz ,  Joseph S. Shor ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Joseph S. Shor ,  Alexander A. Ned

IPC: G01L9/00 ,  H01L23/16

CPC classification number: G01L9/0055 ,  G01L9/0042 ,  Y10S148/012 ,  Y10S438/96

Abstract: A first semiconductor wafer having a semiconductor element such as a piezoresistive element or any integrated circuit located on a top surface thereof is bonded to a second semiconductor wafer so that the semiconductor element on the first wafer is received in a cavity sealed from the outside environment. The bottom surface of the second water is prepared by etching it about a mask pattern so that the pattern projects from the bottom surface, thereby forming the cavity and defining projecting surfaces which are bonded to corresponding projecting areas on the first wafer to create a hermetic seal therebetween. The second wafer is electrochemically etched to produce porous silicon with regions of non-porous monocrystalline silicon extending between the top and bottom surfaces. The porous areas are thermally oxidized to convert them to silicon dioxide while the non-porous regions bonded to bond pads of the resistive pattern on the first wafer act as extended contacts.

Abstract translation: 具有诸如压阻元件的半导体元件或位于其顶表面上的任何集成电路的第一半导体晶片被接合到第二半导体晶片，使得第一晶片上的半导体元件被接收在与外部环境密封的空腔中。 第二水的底表面通过围绕掩模图案进行蚀刻来制备，使得图案从底表面突出，从而形成空腔并且限定突出表面，其结合到第一晶片上的相应突出区域以形成气密封 之间。 第二晶片被电化学蚀刻以产生具有在顶表面和底表面之间延伸的非多孔单晶硅区域的多孔硅。 多孔区域被热氧化以将其转化为二氧化硅，而与第一晶片上的电阻图案的接合焊盘键合的非多孔区域作为延伸的触点。