摘要:
According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.
摘要:
A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.
摘要:
A process for producing a turbine rotor using an ingot in which segregation is prevented effectively when ESR is used to produce a large-sized ingot. A hole is formed along an axial direction in the core of an electrode. The molten pool is made shallow and flat and segregation is prevented from occurring. Consequently, an ESR ingot of good quality offering an excellent surface is obtainable as it is free from segregation. Moreover, an electrode melting rate is increased and efficiency is improved so that a high quality turbine can be manufactured from the ingot.