公开(公告)号：US12230340B2

公开(公告)日：2025-02-18

申请号：US17996293

申请日：2021-11-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yunsik Im ,  Shunhang Zhang ,  Fuqiang Li ,  Changfeng Li ,  Liwei Liu ,  Hehe Hu ,  Ce Ning ,  Hui Zhang ,  Hongrun Wang ,  Zhuo Li

IPC: G11C19/28 ,  G09G3/20 ,  G09G3/3266 ,  G09G3/36

Abstract: The present disclosure provides a shift register unit, a gate driving circuit and a display device. The shift register unit provided by the present disclosure includes: an input sub-circuit, an output sub-circuit, at least one pull-down control sub-circuit, at least one pull-down sub-circuit, at least one first noise reduction sub-circuit, and a reverse bias sub-circuit; the reverse bias sub-circuit is configured to control transistors in at least part of sub-circuits connected to a pull-up node to be in a reverse bias state through a power voltage signal in response to a potential of the pull-up node, or control the transistors in at least part of the sub-circuits connected to the pull-up node to be in the reverse bias state through a cascade signal in response to a potential of a cascade signal terminal.

公开(公告)号：US12191400B2

公开(公告)日：2025-01-07

申请号：US18322981

申请日：2023-05-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Xiaochun Xu ,  Nianqi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US12041825B2

公开(公告)日：2024-07-16

申请号：US17429935

申请日：2020-11-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Xue Liu

IPC: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/12

CPC classification number: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/1201

Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

公开(公告)号：US11695079B2

公开(公告)日：2023-07-04

申请号：US17356167

申请日：2021-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Xiaochun Xu ,  Nianqi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US11664460B2

公开(公告)日：2023-05-30

申请号：US16608549

申请日：2019-04-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin Zhang ,  Jianming Sun ,  Hehe Hu

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1285 ,  H01L29/78618

Abstract: The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.

公开(公告)号：US11605739B2

公开(公告)日：2023-03-14

申请号：US16876344

申请日：2020-05-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Shuilang Dong ,  Wenhua Wang ,  Nianqi Yao

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02

Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.

公开(公告)号：US20220344480A1

公开(公告)日：2022-10-27

申请号：US17755380

申请日：2021-05-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Hehe Hu ,  Tianmin Zhou ,  Jipeng Song

IPC: H01L29/417 ,  H01L29/786

Abstract: The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.

公开(公告)号：US10889504B2

公开(公告)日：2021-01-12

申请号：US16344000

申请日：2018-09-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin Zhang ,  Ce Ning ,  Hehe Hu ,  Zhengliang Li

IPC: C01G15/00 ,  H01L29/786

Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.

公开(公告)号：US10553621B2

公开(公告)日：2020-02-04

申请号：US16302850

申请日：2018-03-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu ,  Wei Yang ,  Xinhong Lu ,  Ke Wang ,  Yu Wen

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32

Abstract: Embodiment of the present disclosure provide a thin-film transistor structure, a manufacturing method thereof, a display panel and a display device. The thin-film transistor structure includes: a base substrate; and a first thin-film transistor and a second thin-film transistor formed on the base substrate, wherein a first active layer of the first thin-film transistor is doped with hydrogen; a material of a second active layer of the second thin-film transistor is metal oxide; and a first isolation barrier surrounding the first thin-film transistor and/or a second isolation barrier surrounding the second thin-film transistor are disposed on the base substrate.

公开(公告)号：US20190221673A1

公开(公告)日：2019-07-18

申请号：US16327208

申请日：2018-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78642 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78696

Abstract: Disclosed are a thin film transistor and a manufacturing method therefor, an array substrate, a display panel and a display device. The thin film transistor includes a base substrate; a first electrode on the base substrate; a second electrode on the first electrode; an active layer provided on the base substrate and connecting the first electrode with the second electrode; and a gate electrode on the base substrate. The base substrate includes an upper surface facing towards the first electrode, the active layer includes a first side surface extending in a direction intersecting the upper surface of the base substrate, the first side surface connects the first electrode with the second electrode, and the gate electrode surrounds the first side surface.