Abstract:
A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.
Abstract:
Disclosed is an array substrate and a display device. The array substrate includes: a plurality of gate lines and a plurality of data lines formed on a base substrate, and a plurality of pixel units defined by the plurality of gate lines and the plurality of data lines intersecting each other, wherein each pixel unit includes a thin film transistor and a pixel electrode connected with the thin film transistor, the pixel electrode, the data line, as well as an active layer, a source and a drain of the thin film transistor are disposed in a same layer and are formed through a single patterning process,
Abstract:
The present disclosure provides an array substrate, its manufacturing method, a display panel and a display device. A conductive metal pattern of the array substrate is covered with an oxygen barrier film.
Abstract:
An array substrate and a manufacturing method thereof, a display device and a thin film transistor are provided. The method includes forming a pattern that includes an active layer, a pixel electrode and a data line on a base substrate; forming a pattern that includes a gate insulating layer and at least two gate via-holes therein, the at least two gate via-holes are located in regions in the gate insulating layer that correspond to outer surroundings of the active layer and do not overlap with areas where the pixel electrode and the data line are located; forming a pattern that includes a gate line and at least two gate electrodes, the at least two gate electrodes are connected to the gate line, and are provided in the at least two gate via-holes, respectively. With this method, the fabricating process and the fabricating cost are saved.
Abstract:
This invention provides an array substrate, a method for fabricating the same, and an OLED display device, which can solve the technical problem that the existing OLED display device has low luminous efficiency. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, and a transparent second electrode, wherein the first electrode is a reflection layer, or the first electrode is transparent and has a reflection layer disposed thereunder; a transflective layer further away from the substrate than the OLED and forming a microcavity structure with the reflection layer; and a color filter film disposed between the OLED and the transflective layer and located in the microcavity structure. The present invention is particularly suitable for a WOLED display device.
Abstract:
The present invention provides an open-type head mount display device and a display method thereof. The open-type head mount display device according to the present invention comprises a display unit for generating display images; a focusing lens unit for adjusting the object distance of a display image from a user's eye; an image acquisition unit for acquiring the image of the two eyes of the user; a focal distance analyzing unit for obtaining the focal distance of the user's eye according to the image of the two eyes of the user; and a lens adjusting unit for adjusting the position of the focusing lens unit in the light ray propagation direction of the display image according to a control command from the analyzing unit, so that the object distance of the display image is matched with the current focal distance of the user's eye.
Abstract:
The embodiments of the invention disclose a scanning type backlight module and a display device. Since a laser light source with good collimation is applied, during a display time of a frame, with the modulation of the optical path regulator, the laser emitted from the laser light source performs a progressive scanning for a region corresponding to at least one row of pixel units in a light guide plate or a display panel. Therefore, the problem of dynamic picture ghosting can be solved effectively; moreover, since the progressive scanning for the entire light guide plate can be realized by changing the light propagation path of the laser emitted from the laser light source with the optical path regulator, the number of the laser light sources can be reduced and the production cost can be decreased.
Abstract:
An array substrate and a manufacturing method thereof as well as a display device are disclosed. The array substrate includes a gate (21) and a gate insulating layers (22) of TFT formed in this order on a surface of a base substrate (20); a semiconductor active layer (23), an etching stop layer (24), and a source (251)/drain (252) of the TFT formed in this order on a surface of the gate insulating layer (22) corresponding to the gate (21) of the TFT. The source (251) and drain (252) of the TFT contact the semiconductor active layer (23) through respective vias. The array substrate further includes: a shielding electrode (26) formed between the gate (21) of the TFT and the base substrate (20); and an insulating layer (27) formed between the gate (21) of the TFT and the shielding electrode (26). In a region where the gate (21) faces the source (251), the area of the gate (210) is smaller than that of the source (251); and/or in a region where the gate (21) faces the drain (252), the area of the gate (210) is smaller than that of the drain (252). The array substrate according to embodiments of the present invention reduces the parasitic capacitance between the source/drain and the gate of the TFT and improves the quality of a display device.
Abstract:
An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate comprise a base substrate (11), a gate line, a data line, and a pixel region defined by intersection of the gate line and the data line, which are formed on the base substrate (11), wherein the pixel region comprises a thin film transistor, and the thin film transistor comprises a gate, a gate insulation layer, an active layer, a source and a drain, the pixel region further comprise: at least one groove (110), formed on a surface of the base substrate (11); a first electrode layer (12) comprising at least one first electrode bar (120), the first electrode bars (120) are disposed in the groove (110) and electrically connected with each other; and a second electrode layer (13) comprising at least one second electrode bar (130), wherein the second electrode bars (130) are disposed outside the groove (110) and electrically connected with each other. No overlapping between the common electrode and the pixel electrode can be achieved, so as to improve display quality of the display device.
Abstract:
An embodiment of the present invention provides a fabricating method of a thin film transistor, a fabricating method of an array substrate, and a display device. The fabricating method of a thin film transistor comprises: forming a gate electrode on a substrate; and forming a gate insulating layer, a semiconductor layer, source and drain electrodes and a channel region on the substrate, wherein, the semiconductor layer is formed of a metal oxide, and two etching steps are used to form the channel region, and in a first etching step, a part of a source-drain metal layer above the semiconductor layer corresponding to the channel region is removed by using a dry etching, and in a second etching step, a remaining part of the source-drain metal layer above the semiconductor layer corresponding to the channel region is removed by using a wet etching, thereby forming the channel region.