公开(公告)号：US20080122767A1

公开(公告)日：2008-05-29

申请号：US11806214

申请日：2007-05-30

申请人： Joo-Soo Lim ,  Hyo-Uk Kim ,  Hee-Young Kwack ,  Hyun-Seok Hong ,  Byung-Chul Ahn ,  Byoung-Ho Lim

发明人： Joo-Soo Lim ,  Hyo-Uk Kim ,  Hee-Young Kwack ,  Hyun-Seok Hong ,  Byung-Chul Ahn ,  Byoung-Ho Lim

IPC分类号： G09G3/30

CPC分类号： H01L27/1288 ,  G02F1/134363 ,  G02F2001/136231 ,  H01L27/1214

摘要： An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a thin film transistor including a gate electrode of the gate line, a gate insulating layer over the gate electrode, an active layer on the gate insulating layer and ohmic contact layers on the active layer, and source and drain electrodes over the ohmic contact layers, a pixel electrode electrically connected to the drain electrode, a data line electrically connected to the source electrode and crossing the gate line, a common electrode spaced apart from the pixel electrode, and a passivation layer directly between the pixel electrode and the common electrode and directly between the source and drain electrodes.

公开(公告)号：US08823019B2

公开(公告)日：2014-09-02

申请号：US13329488

申请日：2011-12-19

申请人： Hwa-Kyung Kim ,  Byung-Chul Ahn ,  Chang-Wook Han ,  Hong-Seok Choi ,  Sung-Hoon Pieh

发明人： Hwa-Kyung Kim ,  Byung-Chul Ahn ,  Chang-Wook Han ,  Hong-Seok Choi ,  Sung-Hoon Pieh

IPC分类号： H01L27/15 ,  H01L27/32

CPC分类号： H01L27/3209 ,  H01L27/322 ,  H01L27/3244 ,  H01L2251/5376

摘要： A white organic light emitting device and a display device using the same to which a 2-peak spectrum is applied to execute white display comprises a first electrode and a second electrode disposed opposite each other on a substrate, and a blue light emitting unit and a phosphorescent light emitting unit provided between the first electrode and the second electrode, and a 2-peak white spectrum is formed through a first light emitting peak of the blue light emitting unit at a wavelength of 430 nm to 460 nm and a second light emitting peak of the phosphorescent light emitting unit at a wavelength of 530 nm to 630 nm.

摘要翻译： 白色有机发光器件及其应用2峰值频谱的白色有机发光器件和显示器件执行白色显示器包括在基板上彼此相对设置的第一电极和第二电极，蓝色发光单元和 设置在第一电极和第二电极之间的磷光发光单元，并且通过蓝色发光单元的第一发光峰在430nm至460nm的波长和第二发光峰形成2峰白光谱 的波长在530nm至630nm的磷光发光单元。

公开(公告)号：US08377265B2

公开(公告)日：2013-02-19

申请号：US11967660

申请日：2007-12-31

申请人： Joo-Soo Lim ,  Hong-Sik Kim ,  Hee-Young Kwack ,  Hyun-Seok Hong ,  Byung-Chul Ahn ,  Byoung-Ho Lim

发明人： Joo-Soo Lim ,  Hong-Sik Kim ,  Hee-Young Kwack ,  Hyun-Seok Hong ,  Byung-Chul Ahn ,  Byoung-Ho Lim

IPC分类号： C23C14/35

CPC分类号： C23C14/0652

摘要： A method of forming an inorganic insulating layer on a substrate comprises supplying a mixed gas between the substrate and a target, and generating a plasma between the substrate and the target. The target comprises a silicon-based material. The method further comprises depositing a plurality of ions from the plasma on the substrate.

摘要翻译： 在衬底上形成无机绝缘层的方法包括在衬底和靶之间提供混合气体，以及在衬底和靶之间产生等离子体。 目标包括硅基材料。 所述方法还包括在所述衬底上沉积来自所述等离子体的多个离子。

公开(公告)号：US20070153204A1

公开(公告)日：2007-07-05

申请号：US11644716

申请日：2006-12-22

申请人： Do-Sung Kim ,  Byung-Chul Ahn

发明人： Do-Sung Kim ,  Byung-Chul Ahn

IPC分类号： G02F1/1343

CPC分类号： G02F1/13439 ,  G02F1/133345 ,  G02F2001/134372 ,  G02F2001/13629

摘要： An array substrate for an IPS mode LCD device comprises a substrate; a gate line along a first direction; a data line along a second direction; a TFT connected to the gate and data lines; a common electrode having a plate shape on the substrate and formed of a first transparent conductive material; and a pixel electrode formed of a second transparent conductive material on the common electrode and including first and second portions and a plurality of third portions combining the first portion with the second portion. The first and second portions are parallel to the second direction and separated from each other and the plurality of third portions are oblique to the first and second portions and separated from one another.

摘要翻译： 用于IPS模式LCD器件的阵列衬底包括衬底; 沿着第一方向的栅极线; 沿着第二方向的数据线; 连接到门和数据线的TFT; 在基板上具有板状的公共电极，由第一透明导电材料形成; 以及由公共电极上的第二透明导电材料形成并包括第一和第二部分的像素电极和将第一部分与第二部分组合的多个第三部分。 第一和第二部分平行于第二方向并且彼此分离，并且多个第三部分相对于第一和第二部分倾斜并且彼此分离。

公开(公告)号：US06815321B2

公开(公告)日：2004-11-09

申请号：US10377732

申请日：2003-03-04

申请人： Byung-Chul Ahn ,  Hyun-Sik Seo

发明人： Byung-Chul Ahn ,  Hyun-Sik Seo

IPC分类号： H01L213205

CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78636

摘要： A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 &mgr;m. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

公开(公告)号：US06548829B2

公开(公告)日：2003-04-15

申请号：US10154955

申请日：2002-05-28

申请人： Byung-Chul Ahn ,  Hyun-Sik Seo

发明人： Byung-Chul Ahn ,  Hyun-Sik Seo

IPC分类号： H01L2904

CPC分类号： H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78636

摘要： A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 &mgr;m. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

摘要翻译： 薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极，第一金属层比第二金属层宽1至4微米。 制造这种薄膜晶体管的方法包括以下步骤：在衬底上沉积第一金属层，将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层，第一金属层被蚀刻成具有指定的宽度，从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。

公开(公告)号：US5926235A

公开(公告)日：1999-07-20

申请号：US861315

申请日：1997-05-21

申请人： Chang-Wook Han ,  Kyoung-Nam Lim ,  Byung-Chul Ahn ,  Jeong-Hyun Kim ,  Ki-Hyun Lyu

发明人： Chang-Wook Han ,  Kyoung-Nam Lim ,  Byung-Chul Ahn ,  Jeong-Hyun Kim ,  Ki-Hyun Lyu

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04

CPC分类号： H01L27/1214 ,  G02F1/136227 ,  G02F2001/133357

摘要： An active matrix liquid crystal display (AMLCD) and method of manufacture includes gate bus lines and gate electrodes formed on a substrate; a gate insulating layer formed on the substrate, the gate bus lines and the gate electrodes; a semiconductor layer formed on the gate insulating layer; and an ohmic contact layer formed on the semiconductor layer. Also source bus lines, source electrodes, drain electrodes and storage electrodes of storage capacitors are formed on the ohmic contact layer. A first passivation layer covers the storage capacitors, the drain electrodes, the semiconductor layer, the source bus lines and source electrodes; and a second passivation layer covers the first passivation layer and the substrate. Contact holes formed in the first and second passivation layers expose the drain electrodes and the storage capacitors. Pixel electrodes are formed on the storage electrodes, the drain electrodes, the passivation layer, and the substrate.

摘要翻译： 有源矩阵液晶显示器（AMLCD）及其制造方法包括形成在基板上的栅极总线和栅电极; 形成在基板上的栅极绝缘层，栅极总线和栅极电极; 形成在所述栅极绝缘层上的半导体层; 以及形成在半导体层上的欧姆接触层。 源极总线，源电极，漏电极和存储电容器的存储电极也形成在欧姆接触层上。 第一钝化层覆盖存储电容器，漏电极，半导体层，源极总线和源电极; 并且第二钝化层覆盖第一钝化层和衬底。 形成在第一钝化层和第二钝化层中的接触孔露出漏电极和存储电容器。 像素电极形成在存储电极，漏电极，钝化层和衬底上。