High data rate magnetic writer design
    31.
    发明授权
    High data rate magnetic writer design 有权
    高数据率磁性写入器设计

    公开(公告)号:US08446689B2

    公开(公告)日:2013-05-21

    申请号:US13136182

    申请日:2011-07-26

    IPC分类号: G11B5/127

    摘要: A high speed magnetic data writer containing a stitched pole tip that works in conjunction with the main pole is disclosed, together with a process for their manufacture. The material composition of each of these two sub-structures is slightly different; one sub-structure is optimized for high magnetic damping while the other sub-structure is optimized for high saturation magnetization.

    摘要翻译: 公开了一种包含与主极结合工作的缝合针尖的高速磁数据写入器及其制造方法。 这两个子结构中的每一个的材料组成略有不同; 一个子结构被优化用于高磁阻尼,而另一个子结构被优化用于高饱和磁化强度。

    HIGH DATA RATE MAGNETIC WRITER DESIGN
    32.
    发明申请
    HIGH DATA RATE MAGNETIC WRITER DESIGN 有权
    高数据速率磁记录设计

    公开(公告)号:US20130027809A1

    公开(公告)日:2013-01-31

    申请号:US13136182

    申请日:2011-07-26

    IPC分类号: G11B5/187 C25D5/02

    摘要: A high speed magnetic data writer containing a stitched pole tip that works in conjunction with the main pole is disclosed, together with a process for their manufacture. The material composition of each of these two sub-structures is slightly different; one sub-structure is optimized for high magnetic damping while the other sub-structure is optimized for high saturation magnetization.

    摘要翻译: 公开了一种包含与主极结合工作的缝合针尖的高速磁数据写入器及其制造方法。 这两个子结构中的每一个的材料组成略有不同; 一个子结构被优化用于高磁阻尼,而另一个子结构被优化用于高饱和磁化强度。

    Laminated high moment film for head applications
    33.
    发明授权
    Laminated high moment film for head applications 有权
    用于头部应用的层压高力矩胶片

    公开(公告)号:US08329320B2

    公开(公告)日:2012-12-11

    申请号:US12291715

    申请日:2008-11-13

    IPC分类号: G11B5/31 G11B5/127

    摘要: A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.

    摘要翻译: 公开了一种具有非AFC配置的叠层高力矩薄膜,其可用作主磁极层的种子层或作为PMR写入器中的主极点本身。 层叠膜包括多个(B / M)堆叠,其中B是取向层,M是高力矩层。 相邻的(B / M)堆叠被非晶层隔开,其破坏相邻高力矩层之间的磁耦合,并且在保持高磁矩并且实现Hch,Hce和Hk的低值的同时降低硬轴方向的剩磁。 非晶材料层可以由Hf,Zr,Ta,Al,Mg,Zn,Ti,Cr,Nb或Si中的一种或多种的氧化物,氮化物或氮氧化物制成,或者可以是Hf,Zr,Ta, Nb,CoFeB,CoB,FeB或CoZrNb。 对准层是FCC软铁磁材料或非磁性FCC材料。

    Laminated high moment film for head applications
    34.
    发明申请
    Laminated high moment film for head applications 有权
    用于头部应用的层压高力矩胶片

    公开(公告)号:US20100119874A1

    公开(公告)日:2010-05-13

    申请号:US12291715

    申请日:2008-11-13

    IPC分类号: G11B5/33 C23C14/34

    摘要: A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.

    摘要翻译: 公开了一种具有非AFC配置的叠层高力矩薄膜,其可用作主磁极层的种子层或作为PMR写入器中的主极点本身。 层叠膜包括多个(B / M)堆叠,其中B是取向层,M是高力矩层。 相邻(B / M)堆叠被非晶层隔开,其破坏相邻高力矩层之间的磁耦合,并且在保持高磁矩并且实现Hch,Hce和Hk的低值的同时降低硬轴方向的剩磁。 非晶材料层可以由Hf,Zr,Ta,Al,Mg,Zn,Ti,Cr,Nb或Si中的一种或多种的氧化物,氮化物或氮氧化物制成,或者可以是Hf,Zr,Ta, Nb,CoFeB,CoB,FeB或CoZrNb。 对准层是FCC软铁磁材料或非磁性FCC材料。