公开(公告)号：US20120074400A1

公开(公告)日：2012-03-29

申请号：US12892403

申请日：2010-09-28

Applicant: Ming-Feng Shieh ,  Ya Hui Chang ,  Ru-Gun Liu ,  Tsong-Hua Ou ,  Ken-Hsien Hsieh ,  Burn Jeng Lin

Inventor： Ming-Feng Shieh ,  Ya Hui Chang ,  Ru-Gun Liu ,  Tsong-Hua Ou ,  Ken-Hsien Hsieh ,  Burn Jeng Lin

IPC: H01L23/544 ,  G03F7/20

CPC classification number: H01L23/544 ,  G03F1/42 ,  G03F9/7076 ,  H01L21/0337 ,  H01L21/0338 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is an alignment mark having a plurality of sub-resolution elements. The sub-resolution elements each have a dimension that is less than a minimum resolution that can be detected by an alignment signal used in an alignment process. Also provided is a semiconductor wafer having first, second, and third patterns formed thereon. The first and second patterns extend in a first direction, and the third pattern extend in a second direction perpendicular to the first direction. The second pattern is separated from the first pattern by a first distance measured in the second direction. The third pattern is separated from the first pattern by a second distance measured in the first direction. The third pattern is separated from the second pattern by a third distance measured in the first direction. The first distance is approximately equal to the third distance. The second distance is less than twice the first distance.

Abstract translation: 提供具有多个次分辨率元素的对准标记。 子分辨率元素各自具有小于可由对准过程中使用的对准信号检测的最小分辨率的维度。 还提供了其上形成有第一，第二和第三图案的半导体晶片。 第一和第二图案在第一方向上延伸，并且第三图案沿垂直于第一方向的第二方向延伸。 第二图案与第一图案分离在第二方向上测量的第一距离。 第三图案与第一图案分离在第一方向上测量的第二距离。 第三图案与第二图案分离在第一方向上测量的第三距离。 第一距离近似等于第三距离。 第二距离小于第一距离的两倍。

公开(公告)号：US08143602B2

公开(公告)日：2012-03-27

申请号：US12411229

申请日：2009-03-25

Applicant: Jeng-Horng Chen ,  Shy-Jay Lin ,  Burn Jeng Lin

Inventor： Jeng-Horng Chen ,  Shy-Jay Lin ,  Burn Jeng Lin

IPC: G21K5/08

CPC classification number: G03F7/70275 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70291 ,  G03F7/70508 ,  H01J37/3177 ,  H01J2237/31762

Abstract: The present disclosure provides a maskless lithography apparatus. The apparatus includes a plurality of writing chambers, each including: a wafer stage operable to secure a wafer to be written and a multi-beam module operable to provide multiple radiation beams for writing the wafer; an interface operable to transfer wafers between each of the writing chambers and a track unit for processing an imaging layer to the wafers; and a data path operable to provide a set of circuit pattern data to each of the multiple radiation beams in each of the writing chambers.

Abstract translation: 本公开提供一种无掩模光刻设备。 该装置包括多个写入室，每个写入室包括：可操作以固定要写入的晶片的晶片台和可操作以提供用于写入晶片的多个辐射束的多光束模块; 可操作以在每个写入室之间传送晶片的接口和用于将成像层处理到晶片的轨道单元; 以及数据路径，其可操作以向每个写入室中的每个多个辐射束提供一组电路图案数据。

公开(公告)号：US08110345B2

公开(公告)日：2012-02-07

申请号：US11043304

申请日：2005-01-26

Applicant: Chin-Hsiang Lin ,  Burn Jeng Lin

Inventor： Chin-Hsiang Lin ,  Burn Jeng Lin

IPC: G03F7/20 ,  G03F7/26

CPC classification number: G03F7/70466 ,  G03F7/001 ,  G03F7/201 ,  G03F7/203 ,  G03F7/70408

Abstract: Provided are a high resolution lithography system and method. In one example, a method for producing a pattern on a substrate includes separating the pattern into at least a first sub-pattern containing lines oriented in a first direction and a second sub-pattern containing lines oriented in a second direction. Lines oriented in the first direction are created on a first layer of photosensitive material on the substrate using a first standing wave interference pattern. A portion of the created lines are trimmed to create the first sub-pattern. A second layer of photosensitive material is applied to the substrate after creating the first sub-pattern. Lines oriented in the second direction are created on the second layer using a second standing wave interference pattern. A portion of the created lines are trimmed to create the second sub-pattern.

Abstract translation: 提供了高分辨率光刻系统和方法。 在一个示例中，用于在衬底上产生图案的方法包括将图案分离成至少包含沿第一方向定向的线的第一子图案和包含沿第二方向定向的线的第二子图案。 使用第一驻波干涉图案，在基板上的第一感光材料层上产生沿第一方向取向的线。 所创建的线的一部分被修剪以创建第一子图案。 在形成第一子图案之后，将第二层感光材料施加到基板上。 使用第二驻波干涉图形在第二层上产生朝向第二方向的线。 创建的线的一部分被修剪以创建第二子图案。

公开(公告)号：US07934177B2

公开(公告)日：2011-04-26

申请号：US11671866

申请日：2007-02-06

Applicant: Jaw-Jung Shin ,  King-Chang Shu ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Jaw-Jung Shin ,  King-Chang Shu ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70466

Abstract: A method for splitting a pattern layout including providing the pattern layout having features, checking the pattern layout to determine the features that require splitting, coloring the features that require splitting with a first and second color, resolving coloring conflicts by decomposing the feature with the coloring conflict and coloring the decomposed feature with the first and second color, and generating a first mask with features of the first color and a second mask with features of the second color.

Abstract translation: 一种用于分割图案布局的方法，包括提供具有特征的图案布局，检查图案布局以确定需要分割的特征，着色需要用第一和第二颜色分割的特征，通过用着色分解特征来解决着色冲突 冲突和着色具有第一和第二颜色的分解特征，以及生成具有第一颜色特征的第一掩模和具有第二颜色特征的第二掩模。

公开(公告)号：US07851774B2

公开(公告)日：2010-12-14

申请号：US12203494

申请日：2008-09-03

Applicant: Burn Jeng Lin ,  Jeng-Horng Chen ,  Shy-Jay Lin ,  Tsai-Sheng Gau

Inventor： Burn Jeng Lin ,  Jeng-Horng Chen ,  Shy-Jay Lin ,  Tsai-Sheng Gau

IPC: H01J49/44

CPC classification number: G03F7/70383 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

Abstract: A direct-write (DW) exposure system is provided which includes a stage for holding a substrate and configured to scan the substrate along an axis during exposure, a data processing module for processing pattering data and generating instructions associated with the patterning data, and an exposure module that includes a plurality of beams that are focused onto the substrate such that the beams cover a width that is larger than a width of a field size and a beam controller that controls the plurality of beams in accordance with the instructions as the substrate is scanned along the axis. The widths are in a direction different from the axis.

Abstract translation: 提供了一种直接写入（DW）曝光系统，其包括用于保持衬底并被配置为在曝光期间沿着轴扫描衬底的台，用于处理图案数据并产生与图案形成数据相关联的指令的数据处理模块，以及 曝光模块，其包括聚焦在基板上的多个光束，使得光束覆盖大于场大小的宽度的宽度;以及根据作为衬底的指令来控制多个光束的光束控制器 沿轴扫描。 宽度在与轴不同的方向。

公开(公告)号：US20090029268A1

公开(公告)日：2009-01-29

申请号：US12029275

申请日：2008-02-11

Applicant: Burn Jeng Lin ,  Hsin-Chang Lee ,  Ming-Jiun Yao

Inventor： Burn Jeng Lin ,  Hsin-Chang Lee ,  Ming-Jiun Yao

IPC: G03F9/00

CPC classification number: G03F1/64

Abstract: The present disclosure provides a mask-pellicle system for lithography patterning. The mask-pellicle system includes a mask substrate; a predefined pattern formed on the transparent pattern; a pellicle configured approximate the transparent substrate; a pellicle frame designed to secure the pellicle; and a stress-absorbing feature configured between the pellicle frame and the mask substrate, to reduce stress of the mask substrate.

Abstract translation: 本公开提供了一种用于光刻图案化的掩模防护薄膜系统。 掩模防护薄膜系统包括掩模基板; 形成在透明图案上的预定图案; 近似透明基板的防护薄膜组件; 设计用于固定防护薄膜的防护薄膜框架; 以及构造在防护薄膜框架和掩模基板之间的应力吸收特征，以减小掩模基板的应力。

公开(公告)号：US20080189672A1

公开(公告)日：2008-08-07

申请号：US11671866

申请日：2007-02-06

Applicant: Jaw-Jung Shin ,  King-Chang Shu ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Jaw-Jung Shin ,  King-Chang Shu ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70466

Abstract: A method for splitting a pattern layout including providing the pattern layout having features, checking the pattern layout to determine the features that require splitting, coloring the features that require splitting with a first and second color, resolving coloring conflicts by decomposing the feature with the coloring conflict and coloring the decomposed feature with the first and second color, and generating a first mask with features of the first color and a second mask with features of the second color.

Abstract translation: 一种用于分割图案布局的方法，包括提供具有特征的图案布局，检查图案布局以确定需要分割的特征，着色需要用第一和第二颜色分割的特征，通过用着色分解特征来解决着色冲突 冲突和着色具有第一和第二颜色的分解特征，以及生成具有第一颜色特征的第一掩模和具有第二颜色特征的第二掩模。

公开(公告)号：US07314689B2

公开(公告)日：2008-01-01

申请号：US10765531

申请日：2004-01-27

Applicant: Burn Jeng Lin ,  Ping Yang ,  Hong Chang Hsieh ,  Yao Ching Ku ,  Chin Hsian Lin ,  Chiu Shan Yoo

Inventor： Burn Jeng Lin ,  Ping Yang ,  Hong Chang Hsieh ,  Yao Ching Ku ,  Chin Hsian Lin ,  Chiu Shan Yoo

IPC: G03F1/00 ,  G03C5/00

CPC classification number: G03F7/70425 ,  G03F1/72 ,  G03F1/76 ,  G03F1/84 ,  G03F7/70383 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7046 ,  G03F9/7049

Abstract: A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.

Abstract translation: 公开了一种用于处理掩模或掩模版基板上的一个或多个倾斜特征的方法和系统。 在掩模或掩模版基板与预定的参考系统对准之后，确定相对于预定参考系的水平或垂直参考方向在掩模或掩模版基板上要处理的特征的偏移角。 掩模或掩模版基板沿预定方向旋转偏移角; 并且使用预定的参考系统处理掩模或掩模版基板上的特征，其中特征在水平或垂直参考方向上被处理。

公开(公告)号：US07307001B2

公开(公告)日：2007-12-11

申请号：US11029992

申请日：2005-01-05

Applicant: Chin-Hsiang Lin ,  Burn Jeng Lin ,  Tsai-Sheng Gau

Inventor： Chin-Hsiang Lin ,  Burn Jeng Lin ,  Tsai-Sheng Gau

IPC: H01L21/76

CPC classification number: G03F7/7065 ,  G03F7/70383 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.

Abstract translation: 晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。

公开(公告)号：US07266803B2

公开(公告)日：2007-09-04

申请号：US11193133

申请日：2005-07-29

Applicant: Shou Yen Chou ,  Jaw Jung Shin ,  Tsai Sheng Gau ,  Burn Jeng Lin

Inventor： Shou Yen Chou ,  Jaw Jung Shin ,  Tsai Sheng Gau ,  Burn Jeng Lin

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: Disclosed are a system and method for designing a mask layout. In one example, the method includes representing the mask layout using a plurality of pixels, each having a mask transmittance coefficient. A control parameter is initialized and a representative of the mask layout is generated. The method determines acceptance of the representative of the mask layout by a cost function and a Boltzmann factor, where the cost function is related to the mask layout and a target substrate pattern, and the Boltzmann factor is related to the cost function and the control parameter. The methods repeats the steps of generating the representative and determining acceptance until the mask layout is stabilized. The control parameter is decreased according to an annealing schedule. The generating, determining, repeating, and decreasing steps are reiterated until the mask layout is optimized.

Abstract translation: 公开了一种用于设计掩模布局的系统和方法。 在一个示例中，该方法包括使用具有掩模透射系数的多个像素来表示掩模布局。 初始化控制参数，并生成掩码布局的代​​表。 该方法通过成本函数和玻尔兹曼因子确定掩模布局的代表的接受度，其中成本函数与掩模布局和目标衬底图案相关，并且玻尔兹曼因子与成本函数和控制参数相关 。 该方法重复产生代表的步骤并确定接受直到掩模布局稳定。 控制参数根据退火时间表减少。 重复生成，确定，重复和减少步骤，直到屏蔽布局被优化为止。