摘要:
A method for improving imaging properties of two or more optical elements comprises the step of determining for at least one of the two optical elements a polarisation-dependent perturbation. In a further step a polarisation-independent perturbation is determined for at least one of the two optical elements. Then a target position for the at least one movable optical element is calculated such that, in the target position, the total perturbation of the at least two optical elements which is made up of the polarisation-dependent perturbations and polarisation-independent perturbations of the two optical elements, is minimized. Finally the at least one movable optical element is moved the to the calculated target position.
摘要:
A method for improving imaging properties of two or more optical elements comprises the step of determining for at least one of the two optical elements a polarization-dependent perturbation. In a further step a polarization-independent perturbation is determined for at least one of the two optical elements. Then a target position for the at least one movable optical element is calculated such that, in the target position, the total perturbation of the at least two optical elements which is made up of the polarization-dependent perturbations and polarization-independent perturbations of the two optical elements, is minimized. Finally the at least one movable optical element is moved the to the calculated target position.
摘要:
A catadioptric projection objective for projecting a pattern, which is located in the object plane of the projection objective, into the image plane of the projection objective has, between the object plane and the image plane, a catadioptric objective part provided with a concave mirror (17), with a first deviating mirror (16) and with at least one second deviating mirror (19). A polarization rotating device (26) rotates the preferred polarization direction of the light approximately 90° inside the light path between the deviating mirrors. This permits an at least partial compensation for polarization-dependent reflectivity differences and phase effect differences of the deviating mirrors thereby enabling a projection with a largely identical contrast for all structural directions.
摘要:
The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要:
A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要:
A projection exposure system and a method for operating a projection exposure system for microlithography with an illumination system are disclosed. The illumination system includes at least one variably adjustable pupil-defining element. The illumination stress of at least one optical element of the projection exposure system is determined automatically in the case of an adjustment of the at least one variably adjustable pupil-defining element. From the automatically determined illumination stress, the maximum radiant power of the light source is set or determined and/or in which an illumination system is provided with which different illumination settings can be made. Usage of the projection exposure system is recorded and, from the history of the usage, at least one state parameter of at least one optical element of the projection exposure system is determined.
摘要:
The disclosure relates to an optical correction device with thermal actuators for influencing the temperature distribution in the optical correction device. The optical correction device is constructed from at least two partial elements which differ with regard to their ability to transport heat. Furthermore, the disclosure relates to methods for influencing the temperature distribution in an optical element.
摘要:
A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.
摘要:
The disclosure relates to a method of manufacturing a projection objective, and a projection objective, such as a projection objective configured to be used in a microlithographic process. The method can include defining an initial design for the projection objective and optimizing the design using a merit function. The method can be used in the manufacturing of projection objectives which may be used in a microlithographic process of manufacturing miniaturized devices.
摘要:
The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.