METHOD FOR MANUFACTURING THE SCALE, SCALE, AND ENCODER-EQUIPPED APPARATUS
    31.
    发明申请
    METHOD FOR MANUFACTURING THE SCALE, SCALE, AND ENCODER-EQUIPPED APPARATUS 审中-公开
    制造尺寸,尺寸和编码器设备的方法

    公开(公告)号:US20090214388A1

    公开(公告)日:2009-08-27

    申请号:US12371441

    申请日:2009-02-13

    IPC分类号: G01N21/00 B32B38/04

    摘要: [Object] To provide a method for manufacturing a scale having an improved abrasion resistance, the scale, and an encoder having the same.[Solving Means] A scale base material 17 is arranged on the upper surface of a mount 26. A pattern base material 18′ as a material of pattern portions 18 are laminated on the upper surface of the scale base material 17. In this laminated state, the pattern base material 18′ is punched toward the scale base material 17 via a press work. Accordingly, the punched pattern base material 18′ is embedded and held in a thickness of the scale base material 17, and the pattern portions 18 are formed.

    摘要翻译: 本发明提供一种制造具有改进的耐磨性,氧化皮,以及具有这种规格的编码器的标尺的方法。 [解决方案]在基座26的上表面上设置刻度基材17.作为图案部18的材料的图案基材18'层叠在标尺基材17的上表面上。在该层叠状态 ,图案基材18'经由压力加工冲压到标尺基材17上。 因此,冲压图案基材18'被嵌入并保持在刻度基材17的厚度上,形成图案部分18。

    Estrogen receptor genes and utilization thereof
    33.
    发明授权
    Estrogen receptor genes and utilization thereof 失效
    雌激素受体基因及其利用

    公开(公告)号:US07393945B2

    公开(公告)日:2008-07-01

    申请号:US10501227

    申请日:2002-07-23

    申请人: Koichi Saito

    发明人: Koichi Saito

    摘要: An estrogen receptor gene and utilization of the estrogen gene are described. The estrogen receptor gene has a nucleotide sequence coding for any of the following amino acid sequences: (a) the amino acid sequence of SEQ ID NO: 1, (b) the amino acid sequence of SEQ ID NO: 4, (c) an amino acid sequence exhibiting 95% or more amino acid identity to the amino acid sequence of SEQ ID NO: 1, and (d) an amino acid sequence exhibiting 95% or more amino acid identity to the amino acid sequence of SEQ ID NO: 4.

    摘要翻译: 描述雌激素受体基因和雌激素基因的利用。 雌激素受体基因具有编码以下任一氨基酸序列的核苷酸序列:(a)SEQ ID NO:1的氨基酸序列,(b)SEQ ID NO:4的氨基酸序列,(c) 与SEQ ID NO:1的氨基酸序列具有95%或更多氨基酸同一性的氨基酸序列,和(d)与SEQ ID NO:4的氨基酸序列显示95%或更多氨基酸同一性的氨基酸序列 。

    Wafer demounting method, wafer demounting device, and wafer demounting and transferring machine
    34.
    发明授权
    Wafer demounting method, wafer demounting device, and wafer demounting and transferring machine 有权
    晶圆拆卸方法,晶圆拆卸装置和晶圆拆卸和移印机

    公开(公告)号:US07364616B2

    公开(公告)日:2008-04-29

    申请号:US10554371

    申请日:2003-05-13

    IPC分类号: H01L21/68

    摘要: It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatus. A wafer release method of the present invention comprises the steps of: pressing the uppermost wafer along an axis direction (L-L′) shifted by an angle in the range of from 15 to 75 degrees from a crystal habit line axis (A-A′) or (B-B′) of the uppermost wafer clockwise or counterclockwise; bending upwardly the peripheral portion of the uppermost wafer so as to cause a bending stress in the uppermost wafer in the axis direction (L-L′) shifted by the angle; blowing a fluid into a clearance between the lower surface of the uppermost wafer and the upper surface of the lower wafer adjacent thereto; and raising the uppermost wafer for releasing.

    摘要翻译: 本发明的目的是提供一种能够安全,简单且可靠地释放晶片并提高晶片释放速率的晶片释放方法,晶片释放装置和使用晶片释放装置的晶片释放转印机。 本发明的晶片释放方法包括以下步骤:沿着从晶体习性线轴(A-A)偏移15至75度的角度的轴向(L-L')按压最上面的晶片 ')或(B-B')的顺时针或逆时针方向; 向上弯曲最上面的晶片的周边部分,以使得最上面的晶片在轴向方向(L-L')上的弯曲应力偏移角度; 将流体吹送到最上面的晶片的下表面和与其相邻的下晶片的上表面之间的间隙中; 并抬起最上面的用于释放的晶片。

    Retardation film, method for producing the same, polarizing plate and liquid crystal display
    36.
    发明申请
    Retardation film, method for producing the same, polarizing plate and liquid crystal display 有权
    延迟膜,其制造方法,偏光板和液晶显示器

    公开(公告)号:US20070134446A1

    公开(公告)日:2007-06-14

    申请号:US11633044

    申请日:2006-12-04

    IPC分类号: C09K19/00

    摘要: A method of producing a long roll retardation film comprising the sequential steps of: (a) casting a film forming material on an endless support to form a long roll film; (b) stretching the long roll film in a lateral direction of the long roll film while both edges of the long roll film are held employing a plurality of clips for each of the edges in a tenter (First Process); (c) reducing distances in the lateral direction between the clips holding the both edges of the long roll film while the edges of the long roll film are held continuously from First Process with the clips (Second Process); (d) enlarging the distances in the lateral direction between the clips holding the both edges of the long roll film while the edges of the long roll film are held continuously from Second Process with the clips (Third Process).

    摘要翻译: 一种制造长辊延迟膜的方法,包括以下顺序步骤:(a)在环形载体上浇铸成膜材料以形成长辊膜; (b)在拉幅机中,通过使用多个夹子保持长卷筒膜的两个边缘,在长卷膜的横向方向上拉伸长卷筒膜(第一工序); (c)缩短夹持长卷薄膜两边缘的夹子之间的横向距离,同时利用夹子从第一工序连续地保持长卷筒膜的边缘(第二工序)。 (d)通过夹子(第三工序),从第二工序连续地保持长卷纸膜两边的夹子之间沿横向延伸的距离。

    Manufacturing method for semiconductor device
    37.
    发明申请
    Manufacturing method for semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US20070111459A1

    公开(公告)日:2007-05-17

    申请号:US11594986

    申请日:2006-11-09

    IPC分类号: H01L21/331

    摘要: A semiconductor device manufacturing method including forming a conductive layer and a silicon film on a semiconductor substrate including an active region, forming an emitter electrode containing a first impurity on the silicon film above the active region, partially etching the silicon film using the emitter electrode as a mask, forming an insulative film covering the semiconductor substrate and a side wall film covering a side surface of the emitter electrode, introducing a second impurity into the conductive layer and silicon film so that the second impurity reaches the active region to form an impurity region containing the second impurity in parts of the conductive layer and silicon film, and diffusing the first impurity contained in the emitter electrode into the silicon film to form in the silicon film a first region containing the first impurity and a second region free of the first impurity.

    摘要翻译: 一种半导体器件制造方法,包括在包括有源区的半导体衬底上形成导电层和硅膜,在有源区上方的硅膜上形成含有第一杂质的发射极,使用发射极部分地蚀刻硅膜作为 掩模,形成覆盖半导体衬底的绝缘膜和覆盖发射电极的侧表面的侧壁膜,将第二杂质引入到导电层和硅膜中,使得第二杂质到达有源区以形成杂质区 在导电层和硅膜的部分中含有第二杂质,并且将包含在发射电极中的第一杂质扩散到硅膜中,以在硅膜中形成含有第一杂质的第一区域和不含第一杂质的第二区域 。

    Estrogen receptor genes and utilization thereof
    40.
    发明申请
    Estrogen receptor genes and utilization thereof 失效
    雌激素受体基因及其利用

    公开(公告)号:US20060141560A1

    公开(公告)日:2006-06-29

    申请号:US10501227

    申请日:2002-07-23

    申请人: Koichi Saito

    发明人: Koichi Saito

    摘要: An estrogen receptor gene comprising a nucleotide sequence coding for any of the following amino acid sequences: (a) the amino acid sequence of SEQ ID NO: 1, (b) the amino acid sequence of SEQ ID NO: 4, (c) the amino acid sequence of SEQ ID NO: 23, (d) an amino acid sequence exhibiting 95% or more amino acid identity to the amino acid sequence of SEQ ID NO: 1, (e) an amino acid sequence exhibiting 95% or more amino acid identity to the amino acid sequence of SEQ ID NO: 4, and (f) an amino acid sequence exhibiting 85% or more amino acid identity to the amino acid sequence of SEQ ID NO: 23.

    摘要翻译: 包含编码以下任一氨基酸序列的核苷酸序列的雌激素受体基因:(a)SEQ ID NO:1的氨基酸序列,(b)SEQ ID NO:4的氨基酸序列,(c) SEQ ID NO:23的氨基酸序列,(d)与SEQ ID NO:1的氨基酸序列具有95%以上氨基酸同一性的氨基酸序列,(e)显示95%以上氨基酸的氨基酸序列 与SEQ ID NO:4的氨基酸序列的酸性同一性,和(f)与SEQ ID NO:23的氨基酸序列显示85%或更多氨基酸同一性的氨基酸序列。