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41 条记录 (耗时 0.028 秒)

    Method For Improving Performance Of A Substrate Carrier
    32.
    发明申请
    Method For Improving Performance Of A Substrate Carrier 有权
    提高基板载体性能的方法

    公开(公告)号：US20110129947A1

    公开(公告)日：2011-06-02

    申请号：US12629467

    申请日：2009-12-02

    申请人： Joshua Mangum ,  William E. Quinn

    发明人： Joshua Mangum ,  William E. Quinn

    IPC分类号： H01L21/66

    CPC分类号： H01L21/67383 ,  C23C16/44 ,  H01L21/02104 ,  H01L21/67366 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/20

    摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

    摘要翻译： 改进衬底载体以改善工艺性能的方法包括在由衬底载体支撑的衬底上沉积材料或制造器件。 然后根据其在衬底载体上的对应位置来测量沉积在衬底上的层的参数。 在衬底上制造的至少一些器件的测量参数或沉积层的性质与衬底载体的物理特性相关，以获得对应于衬底载体上的多个位置的衬底载体的多个物理特性。 然后在衬底载体上的多个对应位置中的一个或多个位置修改衬底载体的物理特性，以获得作为衬底载体上的位置的函数的沉积层或制造器件的期望参数。

    Integration of laser with photodiode for feedback control
    33.
    发明授权
    Integration of laser with photodiode for feedback control 失效
    激光与光电二极管的集成用于反馈控制

    公开(公告)号：US5606572A

    公开(公告)日：1997-02-25

    申请号：US217531

    申请日：1994-03-24

    申请人： Stanley E. Swirhun ,  William E. Quinn

    发明人： Stanley E. Swirhun ,  William E. Quinn

    IPC分类号： H01L25/16 ,  H01L33/00 ,  H01S5/026 ,  H01S5/0683 ,  H01S5/183 ,  H01S5/20 ,  H01S5/343 ,  H01S3/18 ,  H01L31/153

    CPC分类号： B82Y20/00 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/2059 ,  H01S5/3432

    摘要： Photodiodes are integrally formed with vertical cavity surface emitting lasers (VCSELs) and superluminescent light emitting diodes (SLEDs) for monitoring optical radiation intensities. In different embodiments, the photodiode is epitaxially formed within a mirror of a VCSEL, non-epitaxially formed on top of a VCSEL, non-epitaxially formed on side of a VCSEL, or formed on the substrate on the side opposite the VCSEL. A lateral injection vertical cavity surface emitting laser is also disclosed for integration with a lateral PIN photodiode. A photodiode having the same epitaxial layers as a VCSEL is also integrally formed alongside of the VCSEL. Similar devices using SLEDs are also disclosed.

    摘要翻译： 光电二极管与用于监测光辐射强度的垂直腔表面发射激光器（VCSEL）和超发光发光二极管（SLED）一体形成。 在不同的实施例中，光电二极管被外延地形成在VCSEL的反射镜内，非VCSEL外镜形成在VCSEL的一侧上，或者形成在与VCSEL相对的一侧上的衬底上。 还公开了横向注入垂直腔表面发射激光器以与侧向PIN光电二极管集成。 具有与VCSEL相同的外延层的光电二极管也与VCSEL一起形成。 还公开了使用SLED的类似设备。

    Ellipsometric control of material growth
    34.
    发明授权
    Ellipsometric control of material growth 失效
    材料生长的ELLIPSOMETRIC控制

    公开(公告)号：US5091320A

    公开(公告)日：1992-02-25

    申请号：US538648

    申请日：1990-06-15

    申请人： David E. Aspnes ,  William E. Quinn

    发明人： David E. Aspnes ,  William E. Quinn

    IPC分类号： C30B23/08 ,  C23C14/54 ,  C23C16/52 ,  C30B23/00 ,  C30B25/16 ,  G01B11/24 ,  G01J4/04 ,  G01N21/00 ,  H01L21/203 ,  H01L21/205

    CPC分类号： C23C16/52 ,  C23C14/547 ,  C23C14/548 ,  C30B23/002 ,  C30B25/16 ,  C30B25/165 ,  Y10T117/1008

    摘要： A method and apparatus for controlling the growth of a multispecies film. During the film growth, an ellipsometer continuously monitors the surface on which the film is growing. The ellipsometer data is used to calculate the effective complex dielectric constant of the thin-film/substrate structure. A sequence of such data is used in a model calculation to determine the composition of the top portion of the thin film. The measured composition is compared with the target composition and the amount supplied of one of the species is correspondingly changed.

    摘要翻译： 一种用于控制多物质膜生长的方法和装置。 在膜生长期间，椭圆光度计连续地监测膜正在生长的表面。 椭圆计数据用于计算薄膜/衬底结构的有效复介电常数。 在模型计算中使用这样的数据的序列来确定薄膜顶部的组成。 将测量的组合物与目标组成进行比较，并且相应地改变一种物质的供应量。

    Sectional wafer carrier
    35.
    发明授权
    Sectional wafer carrier 失效
    截面晶圆载体

    公开(公告)号：US08562746B2

    公开(公告)日：2013-10-22

    申请号：US12968900

    申请日：2010-12-15

    申请人： Alexander I. Gurary ,  Joseph Arthur Kraus ,  Ajit Paranjpe ,  William E. Quinn ,  David Albert Crewe

    发明人： Alexander I. Gurary ,  Joseph Arthur Kraus ,  Ajit Paranjpe ,  William E. Quinn ,  David Albert Crewe

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C23C16/4586 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/6875 ,  H01L21/68764 ,  H01L21/68771

    摘要： A structure for a chemical vapor deposition reactor includes a support element defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections releasably engaged with the support element. Each carrier section can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture extending between the top and bottom surfaces. The carrier sections can be disposed on the support element with the bottom surfaces of the carrier sections facing toward the upper surface of the support element, so that wafers can be held in the apertures of the carrier sections with one surface of each wafer confronting the support element and an opposite surface exposed at the top surface of the carrier sections.

    摘要翻译： 用于化学气相沉积反应器的结构包括限定相对面对的基本平坦的上表面和下表面的支撑元件和基本上垂直于上表面和下表面的垂直旋转轴线，以及与支撑元件可释放地接合的多个承载部件。 每个载体部分可以包括相对面对的基本平坦的顶部和底部表面以及在顶部和底部表面之间延伸的至少一个孔。 载体部分可以设置在支撑元件上，其中承载部分的底表面朝向支撑元件的上表面，使得晶片可以保持在载体部分的孔中，每个晶片的一个表面面对支撑件 元件和暴露在载体部分的顶表面处的相对表面。

    SECTIONAL WAFER CARRIER
    37.
    发明申请
    SECTIONAL WAFER CARRIER 失效

    公开(公告)号：US20120156374A1

    公开(公告)日：2012-06-21

    申请号：US12968900

    申请日：2010-12-15

    申请人： Alexander I. Gurary ,  Joseph Arthur Kraus ,  Ajit Paranjpe ,  William E. Quinn ,  David Albert Crewe

    发明人： Alexander I. Gurary ,  Joseph Arthur Kraus ,  Ajit Paranjpe ,  William E. Quinn ,  David Albert Crewe

    IPC分类号： C23C16/458 ,  C23C16/46

    CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C23C16/4586 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/6875 ,  H01L21/68764 ,  H01L21/68771

    摘要： A structure for a chemical vapor deposition reactor includes a support element defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections releasably engaged with the support element. Each carrier section can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture extending between the top and bottom surfaces. The carrier sections can be disposed on the support element with the bottom surfaces of the carrier sections facing toward the upper surface of the support element, so that wafers can be held in the apertures of the carrier sections with one surface of each wafer confronting the support element and an opposite surface exposed at the top surface of the carrier sections.

    摘要翻译： 用于化学气相沉积反应器的结构包括限定相对面对的基本平坦的上表面和下表面的支撑元件和基本上垂直于上表面和下表面的垂直旋转轴线，以及与支撑元件可释放地接合的多个承载部件。 每个载体部分可以包括相对面对的基本平坦的顶部和底部表面以及在顶部和底部表面之间延伸的至少一个孔。 载体部分可以设置在支撑元件上，其中承载部分的底表面朝向支撑元件的上表面，使得晶片可以保持在载体部分的孔中，每个晶片的一个表面面对支撑件 元件和暴露在载体部分的顶表面处的相对表面。

    Chemical vapor deposition with energy input
    38.
    发明申请
    Chemical vapor deposition with energy input 有权
    化学气相沉积与能量输入

    公开(公告)号：US20100087050A1

    公开(公告)日：2010-04-08

    申请号：US12587228

    申请日：2009-10-02

    申请人： Eric A. Armour ,  William E. Quinn ,  Joshua Mangum

    发明人： Eric A. Armour ,  William E. Quinn ,  Joshua Mangum

    IPC分类号： H01L21/363

    CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

    摘要翻译： 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

    Integration of laser with photodiode for feedback control
    40.
    发明授权
    Integration of laser with photodiode for feedback control 失效
    激光与光电二极管的集成用于反馈控制

    公开(公告)号：US5577064A

    公开(公告)日：1996-11-19

    申请号：US544926

    申请日：1995-10-18

    申请人： Stanley E. Swirhun ,  William E. Quinn

    发明人： Stanley E. Swirhun ,  William E. Quinn

    IPC分类号： H01L25/16 ,  H01L33/00 ,  H01S5/026 ,  H01S5/0683 ,  H01S5/183 ,  H01S5/20 ,  H01S5/343 ,  H01S3/18 ,  H01L31/12

    CPC分类号： B82Y20/00 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/2059 ,  H01S5/3432

    摘要： Photodiodes are integrally formed with vertical cavity surface emitting lasers (VCSELs) and superluminescent light emitting diodes (SLEDs) for monitoring optical radiation intensities. In different embodiments, the photodiode is epitaxially formed within a mirror of a VCSEL, non-epitaxially formed on top of a VCSEL, non-epitaxially formed on side of a VCSEL, or formed on the substrate on the side opposite the VCSEL. A lateral injection vertical cavity surface emitting laser is also disclosed for integration with a lateral PIN photodiode. A photodiode having the same epitaxial layers as a VCSEL is also integrally formed alongside of the VCSEL. Similar devices using SLEDs are also disclosed.

    摘要翻译： 光电二极管与用于监测光辐射强度的垂直腔表面发射激光器（VCSEL）和超发光发光二极管（SLED）一体形成。 在不同的实施例中，光电二极管被外延地形成在VCSEL的反射镜内，非VCSEL外镜形成在VCSEL的一侧上，或者形成在与VCSEL相对的一侧上的衬底上。 还公开了横向注入垂直腔表面发射激光器以与侧向PIN光电二极管集成。 具有与VCSEL相同的外延层的光电二极管也与VCSEL一起形成。 还公开了使用SLED的类似设备。