公开(公告)号：US20140001145A1

公开(公告)日：2014-01-02

申请号：US14016854

申请日：2013-09-03

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Tadashi INABA ,  Akiko KOYAMA

IPC: H01G13/00 ,  C09K13/02 ,  C09K13/00

CPC classification number: H01G13/00 ,  C09K13/00 ,  C09K13/02 ,  H01L21/02068 ,  H01L21/32134 ,  H01L28/92

Abstract: A method of forming a capacitor structure, which comprises: applying a silicon etching liquid which contains an alkali compound and a hydroxylamine compound in combination, with the pH adjusted to 11 or more, to a polycrystalline silicon film or an amorphous silicon film, removing a part or all of the polycrystalline silicon film or amorphous silicon film, and forming concave and convex shapes that constitute a capacitor.

Abstract translation: 一种形成电容器结构的方法，其特征在于包括：将pH为11以上的pH值调整为11以上的含有碱性化合物和羟胺化合物的硅蚀刻液施加到多晶硅膜或非晶硅膜上， 部分或全部多晶硅膜或非晶硅膜，并形成构成电容器的凹凸形状。

公开(公告)号：US20130244444A1

公开(公告)日：2013-09-19

申请号：US13770409

申请日：2013-02-19

Applicant: FUJIFILM CORPORATION

Inventor： Atsushi MIZUTANI ,  Akiko YOSHII ,  Tetsuya KAMIMURA ,  Tetsuya SHIMIZU

IPC: C09K13/08 ,  H01L21/306

CPC classification number: H01L21/31111 ,  C09K13/08 ,  H01L21/28158 ,  H01L21/30604

Abstract: A method of producing a semiconductor substrate product, having the steps of: providing an etching liquid containing water, a hydrofluoric acid compound, and a water-soluble polymer; and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.

公开(公告)号：US20240166948A1

公开(公告)日：2024-05-23

申请号：US18408579

申请日：2024-01-10

Applicant: FUJIFILM Corporation ,  FUJIFILM Electronic Materials U.S.A., Inc.

Inventor： Atsushi MIZUTANI ,  Mick BJELOPAVLIC ,  Carl BALLESTEROS

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.

公开(公告)号：US20220406596A1

公开(公告)日：2022-12-22

申请号：US17889136

申请日：2022-08-16

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Yasuo SUGISHIMA

IPC: H01L21/02

Abstract: An object of the present invention is to provide a treatment method excellently flattens an object to be treated in a case where the treatment method is applied to an object to be treated having a metal layer. Another object of the present invention is to provide a treatment liquid for an object to be treated. The method for treating an object to be treated according to an embodiment of the present invention is a method for treating an object to be treated having a step A of performing an oxidation treatment on an object to be treated having a metal layer so as to form a metal oxide layer and a step B of bringing a treatment liquid into contact with the object to be treated obtained by the step A so as to dissolve and remove the metal oxide layer, in which the treatment liquid contains an organic solvent and an acidic compound, and a content of the organic solvent is 50% by mass or more with respect to a total mass of the treatment liquid.

公开(公告)号：US20170365486A1

公开(公告)日：2017-12-21

申请号：US15643942

申请日：2017-07-07

Applicant: FUJIFILM Corporation

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/02057

Abstract: Provided are a pattern processing method for applying a pretreatment liquid for modifying the surface of a pattern structure to a semiconductor substrate provided with the pattern structure, which has at least one of polysilicon, amorphous silicon, Ge, or a low dielectric constant material having a k value of 2.4 or less, a method for manufacturing a semiconductor substrate product, and a pretreatment liquid for a pattern structure.

公开(公告)号：US20160365254A1

公开(公告)日：2016-12-15

申请号：US15245593

申请日：2016-08-24

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Tetsuya KAMIMURA

IPC: H01L21/3213 ,  C23F1/30 ,  H01L29/66

CPC classification number: H01L21/32134 ,  C23F1/00 ,  C23F1/10 ,  C23F1/14 ,  C23F1/26 ,  C23F1/30 ,  H01L21/02019 ,  H01L21/02381 ,  H01L29/665 ,  H01L29/78

Abstract: Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water.

Abstract translation: 提供了含有磺酸化合物，卤素离子，硝酸或硝酸离子，有机阳离子和水的半导体工艺的蚀刻剂。

公开(公告)号：US20160254164A1

公开(公告)日：2016-09-01

申请号：US15152620

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Tetsuya KAMIMURA ,  Atsushi MIZUTANI

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  G03F7/425 ,  H01L21/823807 ,  H01L21/823857

Abstract: Provided is a stripping method for stripping a modified resist from a semiconductor substrate by applying an etching solution to the semiconductor substrate, in which the etching solution contains an alcohol compound and a quaternary ammonium hydroxide compound and the quaternary ammonium hydroxide compound is at least one of tetraethylammonium hydroxide and tetrabutylammonium hydroxide.

Abstract translation: 本发明提供一种剥离方法，用于通过向半导体衬底施加蚀刻溶液来剥离来自半导体衬底的改性抗蚀剂，其中蚀刻溶液含有醇化合物和氢氧化季铵化合物，并且季铵氢氧化物是至少一种 四乙基氢氧化铵和四丁基氢氧化铵。

公开(公告)号：US20160083650A1

公开(公告)日：2016-03-24

申请号：US14956500

申请日：2015-12-02

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Atsushi MIZUTANI ,  Kee Young PARK

IPC: C09K13/08 ,  H01L21/3213

CPC classification number: C09K13/08 ,  H01L21/32134

Abstract: There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.

Abstract translation: 提供包括硝酸的蚀刻液; 含氟化合物; 和含氮原子的含氮有机化合物A或含磷化合物B.

公开(公告)号：US20160053386A1

公开(公告)日：2016-02-25

申请号：US14928824

申请日：2015-10-30

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Akiko KOYAMA

IPC: C23F1/30 ,  H01L21/465

Abstract: There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including following specific acid compoundSpecific acid compound: sulfuric acid (H2SO4), nitric acid (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3), or organic acid

Abstract translation: 提供了包括含有锗（Ge）的第一层和含有除锗（Ge）之外的特定金属元素的第二层的半导体衬底的蚀刻溶液，所述蚀刻溶液选择性地除去第二层并包括以下特定酸化合物 特定酸化合物：硫酸（H 2 SO 4），硝酸（HNO 3），磷酸（H 3 PO 4），膦酸（H 3 PO 3）或有机酸

公开(公告)号：US20160053385A1

公开(公告)日：2016-02-25

申请号：US14927697

申请日：2015-10-30

Applicant: FUJIFILM CORPORATION

Inventor： Naotsugu MURO ,  Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Akiko KOYAMA ,  Atsushi MIZUTANI

IPC: C23F1/30 ,  H01L21/3213 ,  H01L29/417

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供了一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含选自镍铂（NiPt），钛（Ti），镍（Ni））和至少一种特定金属元素的第二层 钴（Co），该方法包括：使包含非卤素酸性化合物的蚀刻溶液与第二层接触并选择性地除去第二层。