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公开(公告)号：US20220131128A1
公开(公告)日：2022-04-28
申请号：US17647601
申请日：2022-01-11
Applicant: FUJIFILM CORPORATION
Inventor： Akihito FUKUNAGA , Eijiro IWASE , Koji TONOHARA , Yasuhiro SEKIZAWA
IPC: H01M4/04
Abstract: The present disclosure provides a method of manufacturing a formed body for an electrode including: a step of preparing an electrode material containing an electrode active material; a step of forming at least two projecting portions containing the electrode material and placed side by side on a support in a width direction of the support by supplying the electrode material onto the support; and a step of leveling the projecting portions on the support.
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公开(公告)号：US20210359212A1
公开(公告)日：2021-11-18
申请号：US17387111
申请日：2021-07-28
Applicant: FUJIFILM Corporation
Inventor： Eijiro IWASE
IPC: H01L51/00
Abstract: An object of the present invention is to provide a film forming method for an organic semiconductor film, with which an organic semiconductor film having good uniformity and high mobility can be manufactured with good productivity. A coating liquid is prepared by dissolving an organic semiconductor material in a solvent, the coating liquid is sprayed by a spray unit, and the coating liquid is applied onto a temperature-controlled substrate while the coating liquid during the flight which has been sprayed by the spray unit is being heated, whereby problems are solved.
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公开(公告)号：US20210175449A1
公开(公告)日：2021-06-10
申请号：US17182900
申请日：2021-02-23
Applicant: FUJIFILM Corporation
Inventor： Eijiro IWASE
Abstract: Provided are an organic thin film transistor having high bendability and high stability in air and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a gas barrier layer consisting of a resin layer and an inorganic layer; a transistor element that is formed on one main surface side of the gas barrier layer and includes a gate electrode, an insulating film, an organic semiconductor layer, a source electrode, and a drain electrode; and a sealing layer that is laminated on a side of the transistor element opposite to the gas barrier layer through an adhesive layer, in which a thickness of the resin layer in the gas barrier layer is less than a thickness ranging from the inorganic layer to the sealing layer in the gas barrier layer.
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公开(公告)号：US20200343484A1
公开(公告)日：2020-10-29
申请号：US16926941
申请日：2020-07-13
Applicant: FUJIFILM Corporation
Inventor： Eijiro IWASE
Abstract: A gas barrier film includes a substrate, a peeling resin layer from which the substrate can be peeled off, one or more inorganic layers, and an adhesive layer provided on an inorganic layer most spaced from the substrate, in which an inorganic layer is provided on a surface of the peeling resin layer, the peeling resin layer is a resin layer including a phenyl group, and the adhesive layer is solid at normal temperature and has fluidity by heating, thereby exhibiting adhesiveness.
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公开(公告)号：US20200180285A1
公开(公告)日：2020-06-11
申请号：US16793450
申请日：2020-02-18
Applicant: FUJIFILM Corporation
Inventor： Eijiro IWASE
Abstract: A gas barrier film has, in sequence, a support, an inorganic layer, and a resin film, the inorganic layer and the resin film being supported on the support. The resin film has a hydroxy group. The inorganic layer and the resin film are directly joined to each other with separate portions that are partially present at an interface between the inorganic layer and the resin film. The gas barrier film has one or more sets of a combination of the inorganic layer and the resin film. A method for producing the gas barrier film includes forming an inorganic layer by a gas-phase deposition method, subsequently laminating a resin film having a hydroxy group with the inorganic layer, and heating the resulting film laminate.
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Patent Agency Ranking
公开(公告)号：US20170159173A9
公开(公告)日：2017-06-08
申请号：US14458883
申请日：2014-08-13
Applicant: FUJIFILM Corporation
Inventor： Eijiro IWASE
IPC: C23C16/34 , B05D1/38 , C23C16/513
CPC classification number: C23C16/345 , B05D1/38 , B05D7/04 , B05D2252/02 , C08J7/045 , C08J2367/02 , C08J2433/14 , C09D5/00 , C23C16/509 , C23C16/513 , C23C16/545 , H01L51/5253
Abstract: An organic layer not containing halogen is formed on a substrate using a coating material, and a silicon nitride layer is formed on the organic layer by plasma CVD. Owing to the configuration, there is provided a functional film manufacturing method capable of stably manufacturing a high-performance functional film such as a gas barrier film having excellent gas barrier properties, as well as a functional film.
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公开(公告)号：US20160207285A1
公开(公告)日：2016-07-21
申请号：US15084062
申请日：2016-03-29
Applicant: FUJIFILM Corporation
Inventor： Tomokazu SEKI , Eijiro IWASE
CPC classification number: B32B7/12 , B32B37/12 , B32B37/14 , B32B37/24 , B32B38/10 , B32B2037/1253 , B32B2037/246 , B32B2307/7242 , B32B2307/736 , B32B2457/00 , B32B2457/206 , C23C16/345 , C23C16/40 , C23C16/545
Abstract: A functional film has an organic layer and an inorganic layer which are alternately formed on a support and a protective material which is stuck to a rear surface of the support through an adhesive layer and has thermal characteristics different from thermal characteristics of the support, in which an adhesive force between the adhesive layer and the support is 0.01 N/25 mm to 0.15 N/25 mm, and an adhesive force between the adhesive layer and the protective material is 5 N/25 mm to 50 N/25 mm. In a state where a long laminate composed of the support, the adhesive layer, and the protective material is being transported in a longitudinal direction, the organic layer and the inorganic layer are alternately formed on the surface of the support. As a result, a low-cost functional film, in which the inorganic layer or the like is not damaged and which stably demonstrates the intended performance, is obtained.
Abstract translation: 功能膜具有交替形成在支撑体上的有机层和无机层，以及通过粘合剂层粘附到载体的后表面的保护材料，其具有与载体的热特性不同的热特性，其中 粘合剂层和载体之间的粘合力为0.01N / 25mm至0.15N / 25mm，粘合剂层和保护材料之间的粘合力为5N / 25mm至50N / 25mm。 在由支撑体，粘合剂层和保护材料构成的长层压体沿长度方向输送的状态下，有机层和无机层交替地形成在载体的表面上。 结果，获得了其中无机层等不被损坏并且稳定地表现出预期性能的低成本功能膜。
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公开(公告)号：US20160091649A1
公开(公告)日：2016-03-31
申请号：US14865391
申请日：2015-09-25
Applicant: FUJIFILM Corporation
Inventor： Kyohisa UCHIUMI , Eijiro IWASE
IPC: F21V8/00
CPC classification number: G02B6/005 , B32B3/02 , B32B5/00 , B32B5/16 , B32B7/02 , B32B27/08 , B32B27/20 , B32B27/36 , B32B2255/20 , B32B2255/28 , B32B2264/00 , B32B2264/10 , B32B2264/102 , B32B2264/12 , B32B2307/418 , B32B2307/7242 , B32B2307/732 , B32B2457/202 , B32B2551/00 , C09D123/06 , C09K11/02 , C09K11/70 , G02B6/0023
Abstract: Provided are a laminate film which enables to enhance luminance, and a backlight unit and a liquid crystal display device including this laminate film, as well as a method for producing this laminate film. Provided are laminate films including an optical functional layer and a barrier layer stacked on at least one surface of the optical functional layer, laminate films each having a film having a higher refractive index than a refractive index of the optical functional layer, on a lateral surface of the optical functional layer. It is preferable that the optical functional layer include at least one of a quantum dot and a quantum rod.
Abstract translation: 提供能够提高亮度的层压膜，以及背光单元和包括该层压膜的液晶显示装置，以及该层叠膜的制造方法。 提供了层叠膜，其包括层叠在光学功能层的至少一个表面上的光学功能层和阻挡层，在侧面上具有折射率高于光学功能层的折射率的膜的层叠膜 的光学功能层。 光学功能层优选包括量子点和量子棒中的至少一个。
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公开(公告)号：US20160047036A1
公开(公告)日：2016-02-18
申请号：US14458883
申请日：2014-08-13
Applicant: FUJIFILM Corporation
Inventor： Eijiro IWASE
IPC: C23C16/34 , B05D1/38 , C23C16/513
CPC classification number: C23C16/345 , B05D1/38 , B05D7/04 , B05D2252/02 , C08J7/045 , C08J2367/02 , C08J2433/14 , C09D5/00 , C23C16/509 , C23C16/513 , C23C16/545 , H01L51/5253
Abstract: An organic layer not containing halogen is formed on a substrate using a coating material, and a silicon nitride layer is formed on the organic layer by plasma CVD. Owing to the configuration, there is provided a functional film manufacturing method capable of stably manufacturing a high-performance functional film such as a gas barrier film having excellent gas barrier properties, as well as a functional film.
Abstract translation: 使用涂料在基板上形成不含卤素的有机层，通过等离子体CVD在有机层上形成氮化硅层。 由于该结构，提供了能够稳定地制造阻气性优异的阻气膜等高性能功能膜以及功能膜的功能膜制造方法。
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公开(公告)号：US20150137108A1
公开(公告)日：2015-05-21
申请号：US14606298
申请日：2015-01-27
Applicant: FUJIFILM Corporation
Inventor： Eijiro IWASE
IPC: H01L51/52
CPC classification number: H01L51/5253 , B32B27/281 , B32B27/308 , B32B27/325 , B32B27/365 , B32B2307/412 , B32B2307/416 , B32B2307/422 , B32B2307/54 , B32B2307/7242 , B32B2307/7265 , B32B2457/00 , C23C14/562 , H01L51/5256 , H01L51/5281 , Y10T428/265
Abstract: A functional film of the present invention includes a support body of which a retardation value is less than or equal to 300 nm; a protective inorganic layer which is formed on the support body; one or more combinations of an inorganic layer and an organic layer which are formed on the protective inorganic layer; and a mixed layer having a thickness of 1 to 100 nm which is formed between the support body and the underlying inorganic layer, and is mixed with a component of the support body and a component of the protective inorganic layer.
Abstract translation: 本发明的功能膜包括延迟值小于或等于300nm的支撑体; 保护性无机层，其形成在所述支撑体上; 在保护性无机层上形成的无机层和有机层的一种或多种组合; 以及在支撑体和下面的无机层之间形成的厚度为1〜100nm的混合层，并与保护体的成分和保护无机层的成分混合。
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