公开(公告)号：US20210356862A1

公开(公告)日：2021-11-18

申请号：US17307091

申请日：2021-05-04

Applicant: FUJIFILM Corporation

Inventor： Masafumi KOJIMA ,  Minoru UEMURA ,  Akihiro KANEKO ,  Akiyoshi GOTO ,  Kei YAMAMOTO

IPC: G03F7/004 ,  C07C381/12 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C311/48 ,  C07D333/46 ,  C07D327/06 ,  C07C25/18

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a compound represented by General Formula (I) and an acid-decomposable resin. M1+A−-L-B−M2+  (I)

公开(公告)号：US20180217499A1

公开(公告)日：2018-08-02

申请号：US15937873

申请日：2018-03-28

Applicant: FUJIFILM Corporation

Inventor： Shuji HIRANO ,  Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI ,  Kei YAMAMOTO

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0388 ,  G03F7/0043 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/325 ,  G03F7/40 ,  H01L21/027

Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more.

公开(公告)号：US20170285482A1

公开(公告)日：2017-10-05

申请号：US15629985

申请日：2017-06-22

Applicant: FUJIFILM Corporation

Inventor： Toru TSUCHIHASHI ,  Hideaki TSUBAKI ,  Kei YAMAMOTO

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  H01L21/027 ,  G03F7/039 ,  G03F7/004 ,  G03F7/38 ,  G03F7/40 ,  G03F7/42 ,  G03F7/038

CPC classification number: G03F7/32 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  G03F7/422 ,  H01L21/0274 ,  H01L21/0275

Abstract: Disclosed herein are an organic processing liquid for resist film patterning which is capable of suppressing the occurrence of defects in resist patterns, and a pattern forming method. Provided is an organic processing liquid for resist film patterning, which is used to carry out at least one of developing or cleaning of a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the liquid including an organic solvent, in which the content of an oxidant in the organic processing liquid is 10 mmol/L or less.

公开(公告)号：US20170199460A1

公开(公告)日：2017-07-13

申请号：US15470042

申请日：2017-03-27

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Kei YAMAMOTO ,  Naoki INOUE ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08F220/28 ,  G03F7/004 ,  G03F7/09 ,  G03F7/16 ,  G03F7/039 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027 ,  G03F7/038 ,  C08F220/18 ,  G03F7/20

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0276 ,  C08F2220/185 ,  C08F2220/1891 ,  C08F2220/1841 ,  C08F220/42 ,  C08F220/20

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a compound having a molecular weight of 870 or less, which generates an acid upon irradiation with active light or radiation.

公开(公告)号：US20170184974A1

公开(公告)日：2017-06-29

申请号：US15460380

申请日：2017-03-16

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Akiyoshi GOTO

IPC: G03F7/32 ,  C08F220/18 ,  C08F220/28 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/004 ,  G03F7/09

CPC classification number: G03F7/327 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

公开(公告)号：US20150118627A1

公开(公告)日：2015-04-30

申请号：US14568235

申请日：2014-12-12

Applicant: FUJIFILM Corporation

Inventor： Kei YAMAMOTO ,  Ryosuke UEBA

IPC: G03F7/00

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405

Abstract: A pattern forming method includes: (i) a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), (ii) a step of exposing the first film, (iii) a step of developing the exposed first film by using an organic solvent-containing developer to form a negative pattern, (iv) a step of forming a second film on the negative pattern by using a specific composition (II), (v) a step of increasing polarity of the specific compound present in the second film, and (vi) a step of removing a specific area of the second film by using the organic solvent-containing remover.

Abstract translation: 图案形成方法包括：（i）通过使用光化射线敏感或辐射敏感性树脂组合物（I）形成第一膜的步骤，（ii）暴露第一膜的步骤，（iii） 通过使用含有机溶剂的显影剂显影曝光的第一膜以形成负图案，（iv）通过使用特定组合物（II）在负图案上形成第二膜的步骤，（v）增加极性的步骤 存在于第二膜中的具体化合物，和（vi）通过使用含有机溶剂的去除剂除去第二膜的比表面积的步骤。

公开(公告)号：US20140356771A1

公开(公告)日：2014-12-04

申请号：US14446599

申请日：2014-07-30

Applicant: FUJIFILM Corporation

Inventor： Shuhei YAMAGUCHI ,  Hidenori TAKAHASHI ,  Junichi ITO ,  Kei YAMAMOTO

IPC: G03F7/038 ,  G03F7/20

CPC classification number: G03F7/0388 ,  C08F220/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition, having: (A) a resin having a repeating unit represented by formula (I); (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a resin having at least one repeating unit (x) out of a repeating unit represented by formula (II) and a repeating unit represented by formula (III) and containing substantially neither fluorine atom nor silicon atom, wherein the content of the repeating unit (x) is 90% or more by mole based on all repeating units in the resin (C).

Abstract translation: 提供了一种光化射线敏感或辐射敏感性树脂组合物，其具有：（A）具有由式（I）表示的重复单元的树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; 和（C）具有由式（II）表示的重复单元中的至少一个重复单元（x）和基本上不包含氟原子或硅原子的式（III）表示的重复单元的树脂，其中， 重复单元（x）相对于树脂（C）中的所有重复单元为90％以上。

公开(公告)号：US20130337384A1

公开(公告)日：2013-12-19

申请号：US13967402

申请日：2013-08-15

Applicant: FUJIFILM Corporation

Inventor： Kei YAMAMOTO ,  Hiroshi SAEGUSA

IPC: G03F7/039

CPC classification number: G03F7/039 ,  C09D133/16 ,  C09D133/26 ,  C09D143/04 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041 ,  Y10S430/122 ,  Y10S430/126

Abstract: A positive resist composition for immersion exposure includes the following (A) to (D): (A) a resin capable of decomposing by an action of an acid to increase a solubility of the resin in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a resin having at least either one of a fluorine atom and a silicon atom; and (D) a mixed solvent containing at least one kind of a solvent selected from the group consisting of solvents represented by any one of the following formulae (S1) to (S3) as defined in the specification, in which a total amount of the at least one kind of the solvent is from 3 to 20 mass % based on all solvents of the mixed solvent (D).

Abstract translation: 用于浸渍曝光的正型抗蚀剂组合物包括以下（A）至（D）：（A）能够通过酸的作用分解以增加树脂在碱性显影剂中的溶解度的树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有氟原子和硅原子中的至少一个的树脂; 和（D）含有至少一种选自由说明书中定义的下式（S1）至（S3）中任一项所示的溶剂的溶剂的溶剂的混合溶剂，其中， 相对于混合溶剂（D）的所有溶剂，至少一种溶剂为3〜20质量％。