公开(公告)号：US20150140482A1

公开(公告)日：2015-05-21

申请号：US14606161

申请日：2015-01-27

Applicant: FUJIFILM Corporation

Inventor： Tsukasa YAMANAKA ,  Naoya IGUCHI ,  Ryosuke UEBA ,  Kei YAMAMOTO

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/70466

Abstract: A pattern forming method includes: (a) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition (I) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (b) exposing the first film; (c) developing the exposed first film using a developer containing an organic solvent to form a first negative pattern; (e) forming a second film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition (II) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (f) exposing the second film; and (g) developing the exposed second film using a developer containing an organic solvent to form a second negative pattern in this order.

Abstract translation: 图案形成方法包括：（a）使用光化射线敏感性或辐射敏感性树脂组合物（I）在基材上形成第一膜，所述树脂组合物（I）含有在含有有机溶剂的显影剂中的溶解度由于极性增加而降低 酸的作用 （b）曝光第一片; （c）使用包含有机溶剂的显影剂显影所述暴露的第一膜以形成第一负图案; （e）使用包含其中含有有机溶剂的显影剂中的溶解度由于酸的作用引起极性增加的树脂的光化射线敏感性或辐射敏感性树脂组合物（II）在基材上形成第二膜; （f）使第二膜曝光; 和（g）使用包含有机溶剂的显影剂显影所暴露的第二膜，以依次形成第二负图案。

公开(公告)号：US20160195814A1

公开(公告)日：2016-07-07

申请号：US15069300

申请日：2016-03-14

Applicant: FUJIFILM Corporation

Inventor： Yuichiro ENOMOTO ,  Ryosuke UEBA ,  Michihiro SHIRAKAWA ,  Hajime FURUTANI ,  Akiyoshi GOTO ,  Masafumi KOJIMA

IPC: G03F7/40 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/405 ,  G03F7/20 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0273

Abstract: There is provided a pattern formation method comprising: a step (1) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition which contains a resin of which, due to a polarity being increased by an action of an acid, solubility decreases with respect to a developer which includes an organic solvent; a step (2) of exposing the film to an actinic ray or radiation; a step (3) of forming a target process pattern by developing the film using a developer which includes an organic solvent; and a step (4) of obtaining a processed pattern by applying a processing agent which includes a compound (x) which has at least one of a primary amino group and a secondary amino group with respect to the target process pattern.

Abstract translation: 提供了一种图案形成方法，包括：使用光化射线敏感或辐射敏感性树脂组合物形成膜的步骤（1），其包含由于通过酸的作用而极性增加的树脂， 相对于包含有机溶剂的显影剂，溶解度降低; 将膜暴露于光化射线或辐射的步骤（2）; 通过使用包含有机溶剂的显影剂显影该膜来形成目标工艺图案的步骤（3）; 以及通过应用包括相对于目标工艺图案具有伯氨基和仲氨基中的至少一个的化合物（x）的处理剂来获得加工图案的步骤（4）。

公开(公告)号：US20160147157A1

公开(公告)日：2016-05-26

申请号：US15011804

申请日：2016-02-01

Applicant: FUJIFILM Corporation

Inventor： Ryosuke UEBA ,  Keita KATO

IPC: G03F7/40 ,  G03F7/32 ,  G03F7/36 ,  G03F7/00

CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/325 ,  G03F7/36 ,  H01L21/0273

Abstract: There is provided a pattern formation method comprising: a step (i) for forming a first negative type pattern by performing the specific steps on a substrate; a step (iii) for forming a lower layer by embedding the specific resin composition (2) which contains a second resin in a region of the substrate in which no film part with the first negative type pattern is formed; a step (iv) for forming an upper layer on the lower layer using the specific actinic ray-sensitive or radiation-sensitive resin composition (3); a step (v) for exposing the upper layer to light; a step (vi) for developing the upper layer using a developer which includes an organic solvent and forming a second negative type pattern on the lower layer; and a step (vii) for removing a portion of the lower layer, in the stated order.

Abstract translation: 提供了一种图案形成方法，包括：步骤（i），用于通过在基板上执行特定步骤来形成第一负型图案; 通过在不形成第一负型图案的膜部的基板的区域中嵌入含有第二树脂的特定树脂组合物（2）来形成下层的步骤（iii）; 使用特定的光化射线敏感或辐射敏感性树脂组合物（3）在下层上形成上层的步骤（iv）。 用于将上层曝光的步骤（v）; 用于使用包含有机溶剂并在下层形成第二负型图案的显影剂显影上层的步骤（vi）; 以及用于以所述顺序去除下层的一部分的步骤（vii）。

公开(公告)号：US20150160555A1

公开(公告)日：2015-06-11

申请号：US14606189

申请日：2015-01-27

Applicant: FUJIFILM Corporation

Inventor： Shinichi SUGIYAMA ,  Tsukasa YAMANAKA ,  Ryosuke UEBA ,  Makoto MOMOTA

IPC: G03F7/16 ,  G03F7/30

CPC classification number: G03F7/167 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/16 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

Abstract: The pattern forming method of the invention includes (i) a step of forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent; (ii) a step of exposing the first film; (iii) a step of developing the exposed first film using a developer including an organic solvent to form a negative tone pattern; and (iv) a step of forming a second film on the second substrate so as to cover the periphery of the negative tone pattern.

Abstract translation: 本发明的图案形成方法包括：（i）使用光化射线敏感性或辐射敏感性树脂组合物在基材上形成第一膜的步骤，所述光敏感或辐射敏感性树脂组合物包含能够通过酸的作用而提高极性的树脂（A） 以降低在包含有机溶剂的显影剂中的溶解度; （ii）暴露第一膜的步骤; （iii）使用包含有机溶剂的显影剂显影所述曝光的第一膜以形成负色调图案的步骤; 以及（iv）在第二基板上形成第二膜以覆盖负色调图案的周边的步骤。

公开(公告)号：US20160342083A1

公开(公告)日：2016-11-24

申请号：US15229247

申请日：2016-08-05

Applicant: FUJIFILM Corporation

Inventor： Ryosuke UEBA ,  Naoya IGUCHI ,  Tsukasa YAMANAKA ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Keita KATO

IPC: G03F7/00 ,  H01L21/027 ,  G03F7/40 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/2053 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/31144

Abstract: A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.

Abstract translation: 图案形成方法包括通过使用光化射线敏感性或辐射敏感性树脂组合物在基板上形成第一膜的步骤（i-1）来在基板上形成第一负型图案的步骤（i），步骤 i-2），使第一膜和第（i-3）步曝光; 使用光化射线敏感或辐射敏感性树脂组合物（2）至少在第一负型图案上形成第二膜的步骤（iii）。 步骤（v）使第二膜曝光; 以及步骤（vi），使至少在第一负型图案上显影出曝光的第二膜并形成第二负型图案。

公开(公告)号：US20150118627A1

公开(公告)日：2015-04-30

申请号：US14568235

申请日：2014-12-12

Applicant: FUJIFILM Corporation

Inventor： Kei YAMAMOTO ,  Ryosuke UEBA

IPC: G03F7/00

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405

Abstract: A pattern forming method includes: (i) a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), (ii) a step of exposing the first film, (iii) a step of developing the exposed first film by using an organic solvent-containing developer to form a negative pattern, (iv) a step of forming a second film on the negative pattern by using a specific composition (II), (v) a step of increasing polarity of the specific compound present in the second film, and (vi) a step of removing a specific area of the second film by using the organic solvent-containing remover.

Abstract translation: 图案形成方法包括：（i）通过使用光化射线敏感或辐射敏感性树脂组合物（I）形成第一膜的步骤，（ii）暴露第一膜的步骤，（iii） 通过使用含有机溶剂的显影剂显影曝光的第一膜以形成负图案，（iv）通过使用特定组合物（II）在负图案上形成第二膜的步骤，（v）增加极性的步骤 存在于第二膜中的具体化合物，和（vi）通过使用含有机溶剂的去除剂除去第二膜的比表面积的步骤。

公开(公告)号：US20140106119A1

公开(公告)日：2014-04-17

申请号：US14106910

申请日：2013-12-16

Applicant: FUJIFILM Corporation

Inventor： Ryosuke UEBA

IPC: H05K3/00

CPC classification number: H05K3/0023 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/70466 ,  H01L21/0274 ,  Y10T428/24273

Abstract: There is provided a pattern forming method for forming hole patterns in a substrate, comprising pattern forming steps each including, in order, the steps (1) to (6): (1) forming a resist film on the substrate by using a chemical amplification resist composition containing (A) a resin capable of increasing the polarity by the action of an acid to decrease the solubility for an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (2) exposing the resist film to form a first line-and-space latent image; (3) exposing the resist film to form a second line-and-space latent image; (4) developing the resist film by using an organic solvent-containing developer to form a hole pattern group in the resist film; (5) applying an etching treatment to the substrate with the resist film; and (6) removing the resist film.

Abstract translation: 提供了一种用于在基板中形成孔图案的图案形成方法，包括图案形成步骤，其顺序包括步骤（1）至（6）：（1）通过使用化学放大在基板上形成抗蚀剂膜 抗蚀剂组合物，其包含（A）能够通过酸的作用增加极性的树脂以降低对含有机溶剂的显影剂的溶解度的树脂组合物和（B）在用光化射线或辐射照射时能够产生酸的化合物; （2）使抗蚀剂膜曝光以形成第一线间距潜像; （3）曝光抗蚀剂膜以形成第二线和空间潜像; （4）通过使用含有机溶剂的显影剂在抗蚀剂膜中形成孔图案组来显影抗蚀剂膜; （5）用抗蚀剂膜对基板进行蚀刻处理; 和（6）除去抗蚀剂膜。