公开(公告)号：US06689663B1

公开(公告)日：2004-02-10

申请号：US10218101

申请日：2002-08-12

Applicant: Ching-Yu Chang ,  Ta-Horng Yang

Inventor： Ching-Yu Chang ,  Ta-Horng Yang

IPC: H01L218246

CPC classification number: H01L27/1126 ,  H01L27/112

Abstract: A method of code programming a mask read only memory (ROM) is disclosed. According to the method, a first photoresist layer is formed over word lines and a gate oxide layer of a substrate already having implanted bit lines. The first photoresist layer is patterned to develop pre-code openings over all of the memory cells, which correspond to intersecting word and bit lines. The first photoresist layer is then hardened using either a treatment implant or a treatment plasma. Subsequently, a second photoresist layer is formed over the first photoresist layer and patterned to develop real-code openings over memory cells which are actually to be coded with a logic “0” value. Each memory cell to be coded is then implanted with implants passing through the pre-code openings and the real code openings and into the memory cell.

公开(公告)号：US06547647B2

公开(公告)日：2003-04-15

申请号：US09823994

申请日：2001-04-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: B24B100

CPC classification number: H01L21/02032 ,  B24B37/042

Abstract: A method of wafer reclaim, at least includes: provide a wafer; perform a first semiconductor process to let both film layer and numerous particles are formed on the wafer; perform chemical mechanical polishing process to let part of film layer is removed and scales of part of particles are decreased; perform wet etching process to let both residual film layer and residual particles are further removed; perform cleaning process to let surface of wafer is cleaned; and perform second semiconductor process to let a semiconductor structure is formed on wafer. Furthermore, concepts of the invention that both film layer and particles are thoroughly removed by both chemical mechanical polishing process and wet etching process can be applied as a method for cleaning wafer and a method for planarizing wafer.

公开(公告)号：US06461981B1

公开(公告)日：2002-10-08

申请号：US09682340

申请日：2001-08-22

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L2131

CPC classification number: H01L28/40 ,  H01L21/28525 ,  H01L21/32105 ,  H01L28/56 ,  H01L28/86

Abstract: A method that, using the surface-reaction mechanism of polysilicon in the chemical vapor deposition (CVD) process, starts in depositing a conformal first polysilicon layer on a uneven surface of a semiconductor wafer. The first polysilicon layer is then oxidized to a conformal first silicon oxide thin film. By repeating the previous two steps, a second polysilicon layer is formed on the surface of the first silicon oxide thin film and then oxidized to a second silicon oxide thin film with the required thickness. The conformal silicon oxide thin film formed by the method can be applied in structures of various devices in refined processes.

公开(公告)号：US06436612B1

公开(公告)日：2002-08-20

申请号：US09712916

申请日：2000-11-16

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F730

CPC classification number: H01L27/11266 ,  H01L21/31111 ,  H01L27/112

Abstract: A method for forming a protection device with slope laterals is provided. Firstly, providing a semiconductor substrate having a plurality of alternative first sacrificial layers and second sacrificial layers formed thereon. A first etching step is performed to remove one portion of each of the first sacrificial layers and thereby expose one portion of each lateral of each of the second sacrificial layers. Subsequently, performing a second etching step to remove one portion of the lateral of the second sacrificial layer. Then, repeatedly and alternately performing the first etching step and the second etching step until completely removing the first sacrificial layers and then obtaining a plurality of protection devices formed of the second sacrificial layers each of which having slope laterals.

Abstract translation: 提供了一种用于形成具有边坡的保护装置的方法。 首先，提供具有多个替代的第一牺牲层和形成在其上的第二牺牲层的半导体衬底。 执行第一蚀刻步骤以去除每个第一牺牲层的一部分，从而暴露每个第二牺牲层的每个横向的一部分。 随后，执行第二蚀刻步骤以去除第二牺牲层的横向的一部分。 然后，重复地且交替地执行第一蚀刻步骤和第二蚀刻步骤，直到完全去除第一牺牲层，然后获得由具有斜面的第二牺牲层形成的多个保护装置。

公开(公告)号：US06300196B1

公开(公告)日：2001-10-09

申请号：US09734406

申请日：2000-12-11

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21336

CPC classification number: H01L28/92 ,  H01L21/28273 ,  H01L21/32139 ,  H01L29/66545

Abstract: A method of fabricating a gate is described. A first dielectric layer having a first opening is formed on a substrate. A gate dielectric layer is formed in the opening. A lower portion of a floating gate is formed on the gate dielectric layer. A source/drain region is formed in the substrate beside the lower portion of the floating gate. A conductive layer is formed on the first dielectric layer to completely fill the first opening. The conductive layer is patterned to form a second opening in the conductive layer. The second opening is above the first opening and does not expose the first dielectric layer. The second opening has a tapered sidewall and a predetermined depth. A mask layer is formed to cover the conductive layer and fill the second opening. The mask layer outside the second opening is removed to expose the conductive layer. A portion of the mask layer is removed to leave a first etching mask layer in the second opening. An anisotropic etching process using the first etching mask layer as a mask is performed to etch the conductive layer. An upper portion of the floating gate is formed. The first dielectric layer is exposed. The first etching mask is removed. Thereafter, a dielectric layer between gates and a control gate is formed over the floating gate.

Abstract translation: 描述了制造栅极的方法。 具有第一开口的第一介电层形成在基板上。 在开口中形成栅极电介质层。 浮栅的下部形成在栅介质层上。 源极/漏极区域形成在浮置栅极的下部旁边的衬底中。 在第一电介质层上形成导电层以完全填充第一开口。 将导电层图案化以在导电层中形成第二开口。 第二开口位于第一开口的上方，并且不暴露第一电介质层。 第二开口具有锥形侧壁和预定深度。 形成掩模层以覆盖导电层并填充第二开口。 除去第二开口外面的掩模层以露出导电层。 去除掩模层的一部分以在第二开口中留下第一蚀刻掩模层。 执行使用第一蚀刻掩模层作为掩模的各向异性蚀刻工艺来蚀刻导电层。 形成浮栅的上部。 第一介电层被暴露。 第一蚀刻掩模被去除。 此后，在浮栅之间形成栅极和控制栅极之间的电介质层。

公开(公告)号：US06289605B1

公开(公告)日：2001-09-18

申请号：US09506391

申请日：2000-02-18

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: F26B300

CPC classification number: H01L21/02063

Abstract: The present invention provides a drying method for removing a residual solution from a semiconductor wafer. The semiconductor wafer is placed into a chamber, and then the air pressure of the chamber is lowered from atmospheric pressure to a lower pressure. Next, an inert gas with a predetermined pressure is injected into the chamber to exchange with the dissolved oxygen in the residual solution. The pressure in the chamber is reduced to 0.5˜100 torr so as to lower the boiling point of the solution and to remove the displaced oxygen. Finally, a heating process is performed to completely evaporate the residual solution on the semiconductor wafer.

Abstract translation: 本发明提供了从半导体晶片去除残留溶液的干燥方法。 将半导体晶片放入室中，然后将室的空气压力从大气压降至较低的压力。 接下来，将具有预定压力的惰性气体注入到室中以与残留溶液中的溶解氧交换。 将室内的压力降低至0.5〜100乇，以降低溶液的沸点并除去置换的氧气。 最后，进行加热处理以完全蒸发半导体晶片上的残余溶液。

公开(公告)号：US09046785B2

公开(公告)日：2015-06-02

申请号：US12649462

申请日：2009-12-30

Applicant: Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: G03F7/42 ,  G03F7/40 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/30604 ,  H01L21/31133

Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.

Abstract translation: 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。

公开(公告)号：US08822347B2

公开(公告)日：2014-09-02

申请号：US12430614

申请日：2009-04-27

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/266 ,  G03F7/0757 ,  G03F7/095 ,  H01L21/0332

Abstract: A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon.

Abstract translation: 在半导体衬底上形成湿溶性光刻层的系统包括提供衬底，在衬底上沉积包括第一材料的第一层，以及在衬底上沉积包含第二材料的第二层。 在一个实施例中，第一材料包括与第二材料不同的组成，第一层和第二层之一包括硅。

公开(公告)号：US08802569B2

公开(公告)日：2014-08-12

申请号：US13418589

申请日：2012-03-13

Applicant: Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/302 ,  C23F1/00

CPC classification number: H01L21/0332 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76837

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic layer over the substrate. The organic layer is formed over the plurality of circuit devices. The method includes polishing the organic layer to planarize a surface of the organic layer. The organic layer is free of being thermally treated prior to the polishing. The organic material is un-cross-linked during the polishing. The method includes depositing a LT-film over the planarized surface of the organic layer. The depositing is performed at a temperature less than about 150 degrees Celsius. The depositing is also performed without using a spin coating process. The method includes forming a patterned photoresist layer over the LT-film.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成多个电路器件。 该方法包括在衬底上形成有机层。 有机层形成在多个电路装置上。 该方法包括抛光有机层以使有机层的表面平坦化。 有机层在抛光之前不需要进行热处理。 有机材料在抛光期间是未交联的。 该方法包括在有机层的平坦化表面上沉积LT-膜。 沉积在小于约150摄氏度的温度下进行。 也可以不使用旋涂法进行沉积。 该方法包括在LT膜上形成图案化的光致抗蚀剂层。

公开(公告)号：US20140186773A1

公开(公告)日：2014-07-03

申请号：US13732944

申请日：2013-01-02

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/20 ,  H01L21/02

CPC classification number: G03F7/20 ,  H01L21/02109 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0276

Abstract: Provided is a method including providing a substrate and forming a bottom anti-reflective coating (BARC) on the substrate. The BARC includes a first portion overlying a second portion, which has a different composition than the first portion. The different composition may provide a different dissolution property of the BARC in a developer. A photoresist layer is formed on the first portion of the BARC. The photoresist layer is then irradiated and developed. The developing includes using a developer to remove a region of the photoresist layer and a region of the first and second portions of the BARC.

Abstract translation: 提供了一种方法，包括提供衬底并在衬底上形成底部抗反射涂层（BARC）。 BARC包括覆盖第二部分的第一部分，其具有与第一部分不同的组成。 不同的组合物可以提供BARC在显影剂中的不同溶解性质。 在BARC的第一部分上形成光致抗蚀剂层。 然后照射和显影光致抗蚀剂层。 显影剂包括使用显影剂去除光致抗蚀剂层的区域和BARC的第一和第二部分的区域。