摘要:
An apparatus polishes an object material such as a film on a substrate. This apparatus includes a polishing table for holding a polishing pad having a polishing surface, a motor configured to drive the polishing table, a holding mechanism configured to hold a substrate having an object material to be polished and to press the substrate against the polishing surface, a dresser configured to dress the polishing surface, and a monitoring unit configured to monitor a removal amount of the object material. The monitoring unit is operable to calculate the removal amount of the object material using a model equation containing a variable representing an integrated value of a torque current of the motor when polishing the object material and a variable representing a cumulative operating time of the dresser.
摘要:
A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.
摘要:
A CMP method for polishing and flattening a film having a rugged surface and formed on a surface of semiconductor substrate by making use of an abrasive cloth while feeding an abrasive agent to the film, wherein the abrasive agent comprises abrasive grains having a surface potential adjusted to negative, and a surfactant formed of a water soluble polymer. Cerium oxide or silicon oxide can be employed as the abrasive grain. As for the surfactant, it is possible to employ ammonium polyacrylate or an organic amine salt.
摘要:
A polishing apparatus for polishing semiconductor wafers has a space divided into a plurality of rooms cleaned to different degrees. A storage unit for storing semiconductor wafers is disposed in one of the rooms. A polishing unit for chemically and mechanically polishing a semiconductor wafer supplied from the storage unit is disposed in another one of the rooms. A delivery gate is disposed between the storage unit and the polishing unit and has a temporary storage chamber defined therein for temporarily storing a semiconductor wafer therein.
摘要:
A method for manufacturing a semiconductor device, which includes performing a first chemical mechanical polishing of a surface of an object having an uneven surface by making use of a first polishing liquid containing abrasive particles and a surfactant, and performing a second chemical mechanical polishing of the surface of the object that has been polished by the first chemical mechanical polishing by making use of a second polishing liquid containing abrasive particles and having a concentration of a surfactant lower than that of the first polishing liquid, wherein the first chemical mechanical polishing is switched to the second chemical mechanical polishing when the uneven surface of object is flattened.
摘要:
A polishing apparatus for polishing a workpiece comprises a polishing table having a polishing surface and a top ring for holding the workpiece and pressing the workpiece against the polishing surface. The polishing table and the top ring are rotated independently of each other. The polishing apparatus further comprises a dresser for dressing the polishing surface with certain timing and a sensor for observing a property of the polishing surface on the polishing table when the polishing surface is being dressed by the dresser.
摘要:
A polishing pad comprises at least a first layer having a first main surface serving to polish a substrate to be polished and a second main surface, and a second layer positioned to face the second main surface of the first layer and having fine bags arranged therein, fluid being hermetically sealed in the fine bag.
摘要:
A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
摘要:
A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
摘要:
The present invention provides a apparatus for polishing an object material such as a film on a substrate. This apparatus includes a polishing table for holding a polishing pad having a polishing surface, a motor configured to drive the polishing table, a holding mechanism configured to hold a substrate having an object material to be polished and to press the substrate against the polishing surface, a dresser configured to dress the polishing surface, and a monitoring unit configured to monitor a removal amount of the object material. The monitoring unit is operable to calculate the removal amount of the object material using a model equation containing a variable representing an integrated value of a torque current of the motor when polishing the object material and a variable representing a cumulative operating time of the dresser.