摘要:
A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
摘要:
A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
摘要:
A semiconductor memory device according to embodiments includes a semiconductor substrate and plural switching transistors provided on the semiconductor substrate. In the semiconductor memory device, a contact plug is embedded between adjacent two of the switching transistors, and is insulated from gates of the adjacent two switching transistors. The contact plug is also electrically connected to a source or a drain of each of the adjacent two switching transistors, and an upper surface of the contact plug is at a position higher than an upper surface of the switching transistors. A memory element is provided on the upper surface of the contact plug and stores data. A wiring is provided on the memory element.
摘要:
A semiconductor storage device according to the present embodiment includes a selection element formed on a surface of a semiconductor substrate. A lower electrode is connected to the selection element. A magnetic tunnel junction element is provided on the lower electrode. An upper electrode is provided on the magnetic tunnel junction element. A growth layer is provided on the upper electrode and is composed of a conductive material and has a larger area than the upper electrode when viewed from above the surface of the semiconductor substrate. A wiring line is provided on the growth layer.
摘要:
A semiconductor memory device according to embodiments includes a semiconductor substrate and plural switching transistors provided on the semiconductor substrate. In the semiconductor memory device, a contact plug is embedded between adjacent two of the switching transistors, and is insulated from gates of the adjacent two switching transistors. The contact plug is also electrically connected to a source or a drain of each of the adjacent two switching transistors, and an upper surface of the contact plug is at a position higher than an upper surface of the switching transistors. A memory element is provided on the upper surface of the contact plug and stores data. A wiring is provided on the memory element.
摘要:
According to an aspect of the present invention, there is provided a semiconductor apparatus including a semiconductor substrate, a transistor formed on the semiconductor substrate, an insulating film disposed on the semiconductor substrate, a ferroelectric capacitor and an upper mask. The ferroelectric capacitor includes a lower electrode disposed on the insulating film, a ferroelectric film disposed on the lower electrode and an upper electrode disposed on the ferroelectric film. The upper mask includes a hard mask disposed on the upper electrode and a sidewall mask disposed on at least part of a sidewall of the hard mask.
摘要:
A ferroelectric memory device includes a top electrode, a bottom electrode, a ferroelectric film which is sandwiched between the top and bottom electrodes, includes a first portion having a side surface flushed with a side surface of the top electrode and a second portion having a side surface flushed with a side surface of the bottom electrode, and has a step formed by making the side surface of the second portion project outward from the side surface of the first portion, a top mask which is provided on the top electrode, and a side mask which is provided on part of a side surface of the top mask, the side surfaces of the top electrode and the first portion of the ferroelectric film and has a top at a lower level than a top of the top mask and at a higher level than a top of the top electrode.
摘要:
A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.
摘要:
A semiconductor device comprises a substrate; an insulating layer formed over the substrate; a contact hole formed through the insulating layer; a plurality of first plug electrodes each formed inside the contact hole to the surface of the insulating layer; a capacitor layer formed on the first plug electrode in a first region; and a second plug electrode formed on the first plug electrode in a second region different from the first region. The capacitor layer includes a lower electrode, a ferroelectric film, and an upper electrode stacked in turn. The first plug electrode includes a plug conduction layer formed from the surface of the substrate, and a plug barrier layer formed from above the plug conduction layer up to an upper surface of the insulating layer, the plug barrier layer having a higher etching selection ratio than the lower electrode.
摘要:
The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Additionally, the present invention provides a ferroelectric device having a hardmask relatively thin compared to an underlying barrier layer when compared to prior art devices.