公开(公告)号：US5664989A

公开(公告)日：1997-09-09

申请号：US683265

申请日：1996-07-18

申请人： Rempei Nakata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Takeshi Nishioka ,  Yoshikuni Tateyama ,  Yutaka Nakano ,  Yasutaka Sasaki

发明人： Rempei Nakata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Takeshi Nishioka ,  Yoshikuni Tateyama ,  Yutaka Nakano ,  Yasutaka Sasaki

IPC分类号： B24B37/20 ,  B24B37/22 ,  B24B37/24 ,  B24D13/14 ,  C08J5/14 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B37/22

摘要： A polishing pad comprises at least a first layer having a first main surface serving to polish a substrate to be polished and a second main surface, and a second layer positioned to face the second main surface of the first layer and having fine bags arranged therein, fluid being hermetically sealed in the fine bag.

摘要翻译： 抛光垫至少包括具有用于抛光待抛光基板的第一主表面和第二主表面的第一层，以及设置成面对第一层的第二主表面并且具有布置在其中的细小袋的第二层， 流体密封在细袋中。

公开(公告)号：US20090156000A1

公开(公告)日：2009-06-18

申请号：US12332802

申请日：2008-12-11

申请人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/283

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles.

摘要翻译： 提供了一种制造半导体器件的方法，其包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂膜，在第一温度下烘烤该涂膜 不能实现有机成分的交联以获得有机膜前体，使用含有第一树脂粒子和水溶性聚合物的第一浆料对有机膜前体进行研磨，使有机膜前体的表面平坦化， 膜前体，其中使用含有第二树脂颗粒和水溶性聚合物的第二浆料将表面平坦化，以使凹陷中的有机膜前体离开，从而暴露绝缘膜，第二树脂颗粒的平均粒径小于 的第一树脂颗粒。

公开(公告)号：US20090124076A1

公开(公告)日：2009-05-14

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US07985685B2

公开(公告)日：2011-07-26

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/311

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US08078306B2

公开(公告)日：2011-12-13

申请号：US12289507

申请日：2008-10-29

申请人： Hidetaka Nakao ,  Eisaku Hayashi ,  Kunio Oishi ,  Isao Hayakawa ,  Yoshiaki Miyake ,  Yoshikuni Tateyama ,  Takeshi Ashihara

发明人： Hidetaka Nakao ,  Eisaku Hayashi ,  Kunio Oishi ,  Isao Hayakawa ,  Yoshiaki Miyake ,  Yoshikuni Tateyama ,  Takeshi Ashihara

IPC分类号： G06F19/00

CPC分类号： B24B37/013 ,  B24B49/16

摘要： An apparatus polishes an object material such as a film on a substrate. This apparatus includes a polishing table for holding a polishing pad having a polishing surface, a motor configured to drive the polishing table, a holding mechanism configured to hold a substrate having an object material to be polished and to press the substrate against the polishing surface, a dresser configured to dress the polishing surface, and a monitoring unit configured to monitor a removal amount of the object material. The monitoring unit is operable to calculate the removal amount of the object material using a model equation containing a variable representing an integrated value of a torque current of the motor when polishing the object material and a variable representing a cumulative operating time of the dresser.

摘要翻译： 一种装置在基板上抛光诸如膜之类的物体材料。 该设备包括：用于保持具有抛光表面的抛光垫的抛光台，构造成驱动抛光台的电机;保持机构，其构造成保持具有待抛光物体的基板，并将基板压靠在抛光表面上; 修整器，其被配置为修整抛光表面;以及监视单元，被配置为监视对象材料的移除量。 监视单元可操作以使用包含表示电机的转矩电流的积分值的变量的模型方程来计算物体材料的去除量，以及表示修整器的累积操作时间的变量。

公开(公告)号：US07951717B2

公开(公告)日：2011-05-31

申请号：US11967584

申请日：2007-12-31

申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/302 ,  H01L21/461 ,  C09K3/14 ,  C09G1/02

CPC分类号： H01L21/02074

摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

公开(公告)号：US20090068841A1

公开(公告)日：2009-03-12

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US08292694B2

公开(公告)日：2012-10-23

申请号：US12618033

申请日：2009-11-13

申请人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

发明人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

IPC分类号： B24B49/00

CPC分类号： B24B37/015 ,  B24B41/061 ,  B24B55/02

摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring. The retainer ring is provided with a plurality of through-holes communicating with the flow passage to spray the gas flowing through the flow passage onto the polishing surface of the polishing table.

摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够 有效地防止研磨液和抛光尘埃附着在基板保持部的外周部并干燥。 基板保持机构具有安装凸缘，支撑构件6和保持环。 待研磨的基板被保持在由保持环包围的支撑构件的下侧，并且基板被压靠在抛光台的抛光表面上。 安装凸缘设置有至少与保持环相邻的流动通道。 通过流路供给温度控制气体以冷却安装凸缘，支撑构件和保持环。 保持环设置有与流路连通的多个通孔，以将流过流道的气体喷射到抛光台的抛光表面上。

公开(公告)号：US07452819B2

公开(公告)日：2008-11-18

申请号：US10855529

申请日：2004-05-28

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US20050116348A1

公开(公告)日：2005-06-02

申请号：US11022644

申请日：2004-12-28

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

摘要翻译： 一种半导体器件，包括半导体衬底，层间绝缘膜，该层间绝缘膜包括形成在衬底上方的相对介电常数小于2.5的第一绝缘膜和形成为覆盖第一绝缘膜并且具有大于 第一绝缘膜，以及形成在层间绝缘膜内的掩埋布线。 第二绝缘膜的底部以多个点埋在第一绝缘膜中。