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49 条记录 (耗时 0.035 秒)

    Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device
    34.
    发明授权
    Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device 有权
    前体，薄层制备包括前体，制备薄层的方法和相变存储器件

    公开(公告)号：US07371429B2

    公开(公告)日：2008-05-13

    申请号：US11349135

    申请日：2006-02-08

    申请人： Jung-Hyun Lee ,  Yoon-Ho Khang

    发明人： Jung-Hyun Lee ,  Yoon-Ho Khang

    IPC分类号： C23C16/00 ,  C07C395/00

    CPC分类号： C23C16/305 ,  C07F7/10 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616

    摘要： A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te precursor may be deposited at lower temperatures for forming a Te-containing chalcogenide thin layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si). For example, the Te precursor may employ plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) at lower deposition temperatures. The GST phase-change layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si) formed by employing the Te precursor may have a decreased reset current, and thus when a memory device including the same is employed, its integration may be possible, and operation with higher capacity and/or higher speed may be possible.

    摘要翻译： 含有Te，15组化合物（例如N）和/或14组化合物（例如Si）的Te前体，制备Te前体的方法，含Te的硫族化物薄层，包括Te 前体，制备薄层的方法; 和相变存储器件。 可以在较低温度下沉积Te前体以形成掺杂有15族化合物（例如N）和/或14-基团化合物（例如Si）的含Te的硫族化物薄层。 例如，Te前体可以在较低的沉积温度下使用等离子体增强化学气相沉积（PECVD）或等离子体增强原子层沉积（PEALD）。 掺杂有通过使用Te前体形成的15族化合物（例如N）和/或14族化合物（例如Si）的GST相变层可能具有降低的复位电流，因此当 使用包括其的存储器件，其集成是可能的，并且具有更高容量和/或更高速度的操作可能是可能的。

    Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same
    36.
    发明申请
    Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same 审中-公开
    制造氧化镧层的方法及使用其制造MOSFET和电容器的方法

    公开(公告)号：US20070059447A1

    公开(公告)日：2007-03-15

    申请号：US11599207

    申请日：2006-11-14

    申请人： Jong-Pyo Kim ,  Jung-Hyun Lee ,  Bum-Seok Seo ,  Jung-Hyoung Lee

    发明人： Jong-Pyo Kim ,  Jung-Hyun Lee ,  Bum-Seok Seo ,  Jung-Hyoung Lee

    IPC分类号： C23C16/00

    CPC分类号： H01L21/0228 ,  C23C16/40 ,  H01L21/02175 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31604 ,  H01L29/517

    摘要： Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.

    摘要翻译： 公开了制造氧化镧层的方法以及特别适用于使用这种氧化镧层的半导体应用的MOSFET和/或电容器的制造方法。 所述方法包括将半导体衬底设置到腔室中的预备步骤。 然后将三（双（三甲基甲硅烷基）氨基）镧作为镧前体注入室中，使得镧前体在半导体衬底上被化学吸附。 然后，在进行室的第一次吹扫之后，至少一个氧化剂被注入到室中，使得氧化剂与半导体衬底上的镧前体化学吸附。 然后，房间被第二次清除。 将镧前体注入到室中，首先清洗室，将氧化剂注入到室中，以及对室进行第二次净化的所述步骤可以被顺序地和重复地进行，以形成具有增强的半导体的所需厚度的氧化镧层 特点

    Asymmetric error correction apparatus and method, and clock recovering apparatus for optical reading system employing the same
    37.
    发明授权
    Asymmetric error correction apparatus and method, and clock recovering apparatus for optical reading system employing the same 失效
    非对称误差校正装置和方法以及采用该方法的光学读取系统的时钟恢复装置

    公开(公告)号：US06964007B2

    公开(公告)日：2005-11-08

    申请号：US10215201

    申请日：2002-08-09

    申请人： Jung-Hyun Lee ,  Seok-Jun Ko ,  Pan-Soo Kim ,  Hyung-Jin Choi

    发明人： Jung-Hyun Lee ,  Seok-Jun Ko ,  Pan-Soo Kim ,  Hyung-Jin Choi

    IPC分类号： G11B20/18 ,  G11B20/10 ,  H04L7/033 ,  H04L25/06 ,  G06F11/00 ,  H03M13/03

    CPC分类号： G11B20/10203 ,  G11B20/10037 ,  G11B20/10222 ,  H04L7/0334 ,  H04L25/069

    摘要： An asymmetric error correction apparatus and method, and clock recovering apparatus and data recovering apparatus for a system for reading data from an optical recording medium such as a CD or DVD that has a multi-level input signal and irregular characteristic of zero-crossing transition. The signal inputted from the optical recording medium is digitized, and a zero-crossing detector extracts four sequential samples and detects a zero-crossing point from the two intermediate samples. An asymmetric error detector judges an asymmetric state and asymmetric polarity of the digital signal from a sum of the two side samples among the four samples if the zero-crossing point is detected. A correction section accumulates the judged asymmetric polarities, judges an asymmetric error of the digital signal if the accumulated value exceeds a predetermined threshold, and corrects the asymmetric error of the read signal caused by an inaccurate pit length.

    摘要翻译： 一种不对称误差校正装置和方法，以及用于从具有多电平输入信号和不均匀过零转换特性的诸如CD或DVD的光记录介质读取数据的系统的时钟恢复装置和数据恢复装置。 从光记录介质输入的信号被数字化，并且过零检测器提取四个连续采样并检测来自两个中间采样的过零点。 如果检测到过零点，则不对称误差检测器从四个样本中的两个侧样本的和来判断数字信号的不对称状态和非对称极性。 如果累积值超过预定阈值，则校正部分累积所判断的非对称极性，判断数字信号的不对称误差，并校正由不准确的凹坑长度引起的读取信号的不对称误差。

    Automatic ink supply device
    38.
    发明授权
    Automatic ink supply device 失效
    自动供墨装置

    公开(公告)号：US06945639B2

    公开(公告)日：2005-09-20

    申请号：US10456393

    申请日：2003-06-05

    申请人： Jung-Hyun Lee

    发明人： Jung-Hyun Lee

    IPC分类号： B41J2/175 ,  B65D83/00

    CPC分类号： B41J2/17509

    摘要： The present invention discloses an automatic ink supply device comprising: a main body installed in the one side of a printer, including a bottom supporting plate and a top supporting plate of a predetermined height with multiple supporting holes in the inside of the main body; multiple bottom tanks supported in stable in the state of penetrating the corresponding supporting holes of the bottom supporting plate, including a close cap in the top side, including a hose hole in the center of the close cap, including a nozzle hose from the inner bottom side of the close cap to the outside of the main body, and including a nozzle in the end of the corresponding nozzle hose connected to the printer, respectively; and multiple top tanks supplied by ink with different colors from one another in the state of penetrating the supporting holes of the top supporting plate, including a supply hose with an O/C (open/close) valve in the bottom side, maintaining an amount of charged ink constantly in the corresponding bottom tank by prolonging the bottom end of the supply hose to a predetermined height of the inside of the corresponding bottom tank, including an O/C (open/close) cover in the top side to receive ink from the outside, respectively.

    摘要翻译： 本发明公开了一种自动供墨装置，包括：安装在打印机一侧的主体，包括底板支撑板和预定高度的顶部支撑板，在主体内部具有多个支撑孔; 在底部支撑板的相应的支撑孔穿透的状态下稳定地支撑着多个底部容器，其中包括顶盖中的一个封闭盖，其中包括位于封闭盖的中心的软管孔，其中包括从内部底部的喷嘴软管 一侧的封盖分别与主体的外侧相连，并在相应喷嘴软管的末端分别连接有打印机的喷嘴; 以及在穿透顶部支撑板的支撑孔的状态下彼此具有不同颜色的油墨供应的多个顶箱，包括在底侧具有O / C（打开/关闭）阀的供给软管， 通过将供应软管的底端延伸到相应底部箱体的内部的预定高度，包括顶部的O / C（打开/关闭）盖子，将充电的油墨不断地放置在相应的底部箱中，以从 外面分别。

    Frequency synthesizer for reducing noise
    39.
    发明授权
    Frequency synthesizer for reducing noise 失效
    用于降低噪声的频率合成器

    公开(公告)号：US06870409B2

    公开(公告)日：2005-03-22

    申请号：US10431523

    申请日：2003-05-08

    申请人： Jung-Hyun Lee

    发明人： Jung-Hyun Lee

    IPC分类号： H03L7/16 ,  H03L7/197 ,  H03L7/06

    CPC分类号： H03L7/1978

    摘要： A fractional-N frequency synthesizer includes a first divider, a second divider, and a division ratio controller. The first divider receives and divides an oscillation frequency signal. The second divider receives a predetermined feedback frequency signal and divides the feedback frequency signal in response to a selection signal. The division ratio controller receives and divides an output signal of the first divider and an output signal of the second divider and generates a reference frequency signal in which the oscillation frequency signal is divided, a comparison frequency signal that is compared with the reference frequency signal, and the selection signal used to select the division ratio of the second divider.

    摘要翻译： 分数N频率合成器包括第一分频器，第二分频器和分频比控制器。 第一分频器接收并分频振荡频率信号。 第二分频器接收预定的反馈频率信号，并响应于选择信号对反馈频率信号进行分频。 分频比控制器接收并除除第一分频器的输出信号和第二分频器的输出信号，并产生其中分频振荡频率信号的参考频率信号，与参考频率信号相比较的比较频率信号， 以及用于选择第二分频器的分频比的选择信号。