公开(公告)号：US09570671B2

公开(公告)日：2017-02-14

申请号：US14479192

申请日：2014-09-05

申请人： Masatoshi Yoshikawa ,  Hiroaki Yoda ,  Shuichi Tsubata ,  Kenji Noma ,  Tatsuya Kishi ,  Satoshi Seto ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Hiroaki Yoda ,  Shuichi Tsubata ,  Kenji Noma ,  Tatsuya Kishi ,  Satoshi Seto ,  Kazuhiro Tomioka

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

摘要翻译： 根据一个实施例，磁存储器件包括堆叠结构，其包括磁性元件，覆盖层叠结构的保护绝缘膜以及设置在堆叠结构和保护绝缘膜之间的界面处的界面层。 界面层包含不包含在磁性元件或保护绝缘膜中的预定元件。

公开(公告)号：US09093632B2

公开(公告)日：2015-07-28

申请号：US14203422

申请日：2014-03-10

申请人： Shuichi Tsubata ,  Masatoshi Yoshikawa ,  Satoshi Seto ,  Kazuhiro Tomioka ,  Ga Young Ha

发明人： Shuichi Tsubata ,  Masatoshi Yoshikawa ,  Satoshi Seto ,  Kazuhiro Tomioka ,  Ga Young Ha

IPC分类号： H01L27/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L21/28

CPC分类号： H01L43/12 ,  H01L21/0234 ,  H01L21/28202 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L27/228 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/78 ,  H01L43/02

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括形成在半导体衬底上的磁阻元件，延伸穿过形成在半导体衬底上并紧靠磁阻元件下方的层间绝缘膜的第一接触插塞具有与 半导体衬底的上表面，并且与磁阻元件相邻，以及形成在磁阻元件和第一接触插塞之间以及层间电介质膜上的绝缘膜，其中绝缘膜包括位于 所述层间电介质膜和位于所述绝缘膜中并位于所述第一区域的上表面上的第二区域，所述绝缘膜由SiN制成，并且所述第一区域与所述第二区域相比是富氮膜。

公开(公告)号：US08956882B1

公开(公告)日：2015-02-17

申请号：US14200510

申请日：2014-03-07

申请人： Kazuhiro Tomioka ,  Satoshi Seto ,  Masatoshi Yoshikawa ,  Satoshi Inada

发明人： Kazuhiro Tomioka ,  Satoshi Seto ,  Masatoshi Yoshikawa ,  Satoshi Inada

IPC分类号： H01L21/00 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L27/228

摘要： According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the first non-magnetic layer, forming a second non-magnetic layer on the second magnetic layer, forming a third magnetic layer on the second non-magnetic layer, patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed, and patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer.

摘要翻译： 根据一个实施例，一种制造磁阻元件的方法，该方法包括在第一磁性层上形成第一非磁性层，在第一非磁性层上形成第二磁性层，在第一非磁性层上形成第二非磁性层 第二磁性层，在第二非磁性层上形成第三磁性层，使用包括惰性气体和氮气的蚀刻气体，通过RIE对第三磁性层进行构图，直到第二非磁性层的表面露出 并且在第三磁性层的图案化之后图案化第二非磁性层和第二磁性层。

公开(公告)号：US07589014B2

公开(公告)日：2009-09-15

申请号：US11565530

申请日：2006-11-30

申请人： Yoshiaki Shimooka ,  Hideki Shibata ,  Hideshi Miyajima ,  Kazuhiro Tomioka

发明人： Yoshiaki Shimooka ,  Hideki Shibata ,  Hideshi Miyajima ,  Kazuhiro Tomioka

IPC分类号： H01L21/4763

CPC分类号： H01L21/76885 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.

摘要翻译： 一种制造具有多个布线层的半导体器件的方法形成第一层间绝缘膜，在第一层间绝缘膜中形成用于布线的多个沟槽，在沟槽中填充金属膜以形成布线，蚀刻第一夹层 将布线作为掩模，并且去除布线之间的层间绝缘膜以提供要填充的沟槽，并且在要填充的沟槽中填充由低介电常数材料制成的第二层间绝缘膜。

公开(公告)号：US20090014414A1

公开(公告)日：2009-01-15

申请号：US11870641

申请日：2007-10-11

申请人： Kazuhiro Tomioka ,  Nobuyoshi Kobayashi ,  Isamu Sakuragi ,  Kazuhiro Kubota

发明人： Kazuhiro Tomioka ,  Nobuyoshi Kobayashi ,  Isamu Sakuragi ,  Kazuhiro Kubota

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76831

摘要： A substrate processing method includes preparing a substrate having a low-k interlayer dielectric film as a to-be-etched film and a photoresist film, formed on the low-k interlayer insulating film, serving as an etching mask with a predetermined circuit pattern; etching the low-k interlayer insulating film through the photoresist film to form grooves and/or holes in the low-k interlayer insulating film; ashing the photoresist film by using hydrogen radicals generated by bring a hydrogen-containing gas into contact with a catalyst of a high temperature; and recovering damage to the low-k interlayer insulating film due to the ashing by supplying a specific recovery gas. The method further includes recovering damage to the low-k interlayer insulating film due to the etching by supplying a specific recovery gas.

摘要翻译： 基板处理方法包括：在低k层间绝缘膜上形成具有预定电路图案的蚀刻掩模的低k层间绝缘膜作为被蚀刻膜和光致抗蚀剂膜的基板; 通过光致抗蚀剂膜蚀刻低k层间绝缘膜，以在低k层间绝缘膜中形成凹槽和/或孔; 使用通过使含氢气体与高温催化剂接触而产生的氢自由基来使光致抗蚀剂膜发生灰化; 并且通过供给特定的回收气体，由于灰化而恢复对低k层间绝缘膜的损坏。 该方法还包括通过提供特定的回收气体来回收由于蚀刻而导致的低k层间绝缘膜的损坏。

公开(公告)号：US20070082493A1

公开(公告)日：2007-04-12

申请号：US11525179

申请日：2006-09-22

申请人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

发明人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

IPC分类号： H01L21/311

CPC分类号： H01L21/32136 ,  H01L21/311 ,  H01L21/32139 ,  H01L28/55 ,  H01L28/65 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.

摘要翻译： 一种制造半导体器件的方法，包括在蚀刻靶膜上形成牺牲膜，在牺牲膜上形成蚀刻掩模，使用蚀刻掩模作为掩模蚀刻蚀刻目标膜，除去牺牲膜以允许蚀刻掩模 粘附到蚀刻目标膜上，并除去蚀刻掩模。