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公开(公告)号：US20050254142A1
公开(公告)日：2005-11-17
申请号：US11121013
申请日：2005-05-04
摘要： An AF control apparatus includes a plurality of movable lens groups, each of which is movable along an optical axis for performing focusing independently, and a driving system for moving each of the movable lens groups A moving path of each of the movable lens groups during an autofocusing operation is defined so that a ratio of moving distances of the each of the movable lens groups is constant over an entire zoom range.
摘要翻译： 一种AF控制装置包括多个可移动透镜组，每个可移动透镜组可沿着光轴独立地进行聚焦，以及用于移动每个可移动透镜组的驱动系统在每个可移动透镜组期间的每个可移动透镜组的移动路径 定义自动对焦操作，使得每个可移动透镜组的移动距离的比例在整个变焦范围内是恒定的。
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32.发明授权公开(公告)号：US06923885B2
公开(公告)日：2005-08-02
申请号：US10732286
申请日：2003-12-11
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.
摘要翻译： 一种等离子体处理装置，其具有位于真空室中的样品台，设置在与放置在样品台上的样品相对的位置并且面对在真空室中产生的等离子体的结构，以及设置在该结构中的至少一个通孔 气体通过该气体流入真空室。 光传输器安装在所述至少一个通孔的背面上，来自所述样品的光通过所述至少一个通孔穿过，所述光通过所述光发射器检测。
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公开(公告)号：US06916396B2
公开(公告)日：2005-07-12
申请号：US10224652
申请日：2002-08-21
申请人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
发明人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/3213 , H01L21/66 , H05H1/00
CPC分类号： H01L21/67253 , G05B2219/45212 , H01J37/32935 , H01L21/32137 , H01L22/20
摘要： An etching system for subjecting a single film to be etched to etching involves a plurality of etching steps in which respective different recipes are applied. The etching system employs recipe generating means which fixes the recipe to be applied to the final etching step, affecting an underlying film making contact with the film to be etched, of the etching steps, to a preset recipe, and which generates a recipe to be applied to the residual etching step on the basis of the results of processing. Etching processing is conducted according to the recipes generated by the recipe generating means.
摘要翻译： 用于对单个膜进行蚀刻的蚀刻系统涉及多个蚀刻步骤，其中应用各自不同的配方。 蚀刻系统使用配方生成装置，其将要应用于最终蚀刻步骤的配方固定到蚀刻步骤的下一个膜，以将蚀刻步骤的蚀刻膜与下一个膜接触到预设配方，并且生成配方 基于处理结果应用于残留蚀刻步骤。 根据食谱产生装置产生的配方进行蚀刻处理。
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34.发明授权Method and apparatus for determining endpoint of semiconductor element fabricating process 有权用于确定半导体元件制造工艺的端点的方法和装置公开(公告)号：US06903826B2
公开(公告)日：2005-06-07
申请号：US09946504
申请日：2001-09-06
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
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公开(公告)号：US06899766B2
公开(公告)日：2005-05-31
申请号：US10781689
申请日：2004-02-20
申请人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
发明人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
CPC分类号： H01L21/67288 , C23C16/5096 , C23C16/52 , H01J37/32935
摘要： A method of diagnosing a semiconductor processing apparatus for imparting plasma treatment to a sample arranged in a vacuum process chamber, which apparatus includes a plasma generator for generating plasma inside the vacuum process chamber and process gas introducer for introducing a process gas into the vacuum process chamber, includes the steps of imparting mechanical oscillation to the semiconductor processing apparatus and detecting mechanical oscillation generated by the step of imparting mechanical oscillation inside the semiconductor processing apparatus.
摘要翻译： 一种诊断用于对设置在真空处理室中的样品施加等离子体处理的半导体处理装置的方法，该装置包括用于在真空处理室内产生等离子体的等离子体发生器和用于将处理气体引入真空处理室 包括以下步骤：向半导体处理装置施加机械振荡，并且检测通过在半导体处理装置内部施加机械振荡的步骤产生的机械振荡。
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36.发明申请Process monitoring device for sample processing apparatus and control method of sample processing apparatus 有权样品处理装置的过程监控装置和样品处理装置的控制方法公开(公告)号：US20050090914A1
公开(公告)日：2005-04-28
申请号：US10987121
申请日：2004-11-15
CPC分类号： G05B21/02 , G05B19/41875 , G05B23/0221 , G05B2219/32053 , G05B2219/32182 , Y02P90/22
摘要： A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.
摘要翻译： 监视器数据获取部通过传感器获取与处理装置中的一个样本的处理状态有关的多个监视数据。 数据选择部从多个监视数据中选择属于包含在多个处理部中的任意处理分区的监视数据。 监视信号生成部基于属于由数据选择部选择的任意处理部的监视数据，生成监视信号。 显示设置控制器以时间序列方式在显示部分上显示关于在处理设备中处理的样本获得的多个监视信号。
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37.发明申请公开(公告)号：US20050087298A1
公开(公告)日：2005-04-28
申请号：US10999006
申请日：2004-11-30
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G05B19/418 , H01L21/66 , C23F1/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition. The process recipe control unit includes a controller which controls at least one among a plurality of different processing performances for processing of the semiconductor wafer.
摘要翻译： 用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程 依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。 该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测处理结果与预先设定的值进行比较，以控制处理条件。 处理配方控制单元包括控制用于处理半导体晶片的多个不同处理性能中的至少一个的控制器。
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38.发明授权公开(公告)号：US06879867B2
公开(公告)日：2005-04-12
申请号：US09945691
申请日：2001-09-05
IPC分类号： H01L21/205 , G05B23/02 , H01L21/00 , H01L21/02 , G06F19/00
CPC分类号： G05B21/02 , G05B19/41875 , G05B23/0221 , G05B2219/32053 , G05B2219/32182 , Y02P90/22
摘要： A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.
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公开(公告)号：US06776872B2
公开(公告)日：2004-08-17
申请号：US10087982
申请日：2002-03-05
IPC分类号： H05H100
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A data processing apparatus for a semiconductor manufacturing apparatus includes a semiconductor manufacturing apparatus for executing processing for a wafer, a data collecting semiconductor device for collecting processing data generated in association with the processing, and a data copying semiconductor device for extracting the processing data collected in the data collecting semiconductor device and for producing a copy of the processing data. The apparatus may include a data analyzer for analyzing the data copy produced by the data copying semiconductor device and for diagnosing a processing state of the processing apparatus.
摘要翻译： 一种半导体制造装置的数据处理装置包括：用于执行晶片处理的半导体制造装置，用于收集与该处理相关联地生成的处理数据的数据收集半导体装置;以及数据复制半导体装置，用于提取收集的处理数据 数据采集半导体器件和用于产生处理数据的副本。 该装置可以包括用于分析由数据复制半导体器件产生的数据副本并用于诊断处理装置的处理状态的数据分析器。
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公开(公告)号：US06716301B2
公开(公告)日：2004-04-06
申请号：US09799527
申请日：2001-03-07
申请人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
发明人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
IPC分类号： H01L21306
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3299 , H01L21/31116
摘要： A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.
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