公开(公告)号：US06368469B1

公开(公告)日：2002-04-09

申请号：US08851946

申请日：1997-05-06

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C1434

CPC分类号： H01J37/3438 ,  H01J37/3402

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US06270859B1

公开(公告)日：2001-08-07

申请号：US09049856

申请日：1998-03-27

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C1634

摘要： A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.

公开(公告)号：USD436609S1

公开(公告)日：2001-01-23

申请号：US29114734

申请日：1999-11-30

申请人： Avi Tepman

设计人： Avi Tepman

公开(公告)号：US5919345A

公开(公告)日：1999-07-06

申请号：US645783

申请日：1996-05-14

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/3423 ,  H01J37/3405 ,  H01J37/347 ,  H01J2237/3327

摘要： A sputtering chamber includes a substrate support member, for positioning a substrate thereon, and a sputtering target therein. At least a portion of the sputtering surface of the target is located non-parallel to the substrate. In one aspect of the invention, the sputtering surface of the target is conical, and it tapers as it approaches the substrate.

摘要翻译： 溅射室包括用于在其上定位基板的基板支撑构件和其中的溅射靶。 靶的溅射表面的至少一部分位于不平行于衬底。 在本发明的一个方面，目标的溅射表面是圆锥形的，并且当其接近基板时它逐渐变细。

公开(公告)号：US5673167A

公开(公告)日：1997-09-30

申请号：US709136

申请日：1996-09-06

申请人： Robert E. Davenport ,  Avi Tepman

发明人： Robert E. Davenport ,  Avi Tepman

IPC分类号： C23C14/24 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  F16J15/08 ,  H01L21/00 ,  H01L21/02 ,  H01L21/68 ,  H01L21/683 ,  H01J37/32

CPC分类号： H01L21/67109 ,  C23C14/541 ,  C23C14/564 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/6831 ,  Y10S269/903 ,  Y10S277/913 ,  Y10S277/922 ,  Y10S277/932 ,  Y10T279/23 ,  Y10T403/477 ,  Y10T403/479

摘要： The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3.times.10.sup.-3 in./in./.degree.C., measured at 600.degree. C., between the surfaces to be bridged by the thin, metal-comprising layer.

摘要翻译： 本发明涉及一种在半导体处理中有用的装置和方法。 该装置和方法可用于提供密封件，其能够使半导体处理室的第一部分在第一压力下操作，同时半导体处理室的第二部分在第二不同压力下操作。 密封装置和方法能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热的热传递的压力 手段。 密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离 其他。 优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。 本发明特别有用，当线性膨胀系数在600℃下至少为3×10 -3 in / in.in℃时，待被薄金属包覆的表面之间桥接 层。

公开(公告)号：US5632873A

公开(公告)日：1997-05-27

申请号：US446396

申请日：1995-05-22

申请人： Joseph J. Stevens ,  Roy J. Edwards ,  Avi Tepman

发明人： Joseph J. Stevens ,  Roy J. Edwards ,  Avi Tepman

IPC分类号： C23C14/50 ,  C23C16/458 ,  H01L21/687 ,  C23C14/34 ,  B05C13/00 ,  C23C16/04

CPC分类号： H01L21/68721 ,  C23C14/50 ,  C23C16/4585

摘要： A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a ring assembly suspended in the chamber on a chamber shield. The ring assembly comprises first and second rings, the second ring being disposed intermediate the first ring and the substrate. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the ring assembly off the shield. After deposition is complete, the support member retracts through the shield, to reposition the outer ring on the shield. The inner ring continues to move downwardly with the substrate support member a short distance before it is repositioned on the shield. In the event that a deposition material layer has formed between the substrate and the outer ring, the inner ring includes a plurality of tabs thereon which contact the substrate to force it out of the ring assembly as the inner ring continues downwardly after the outer ring has been positioned on the shield.

摘要翻译： 用于在衬底上沉积膜层的室包括支撑构件，衬底位于该支撑构件上用于在室中进行处理，以及环形组件，其悬挂在腔室屏蔽中的腔室中。 环组件包括第一和第二环，第二环设置在第一环和衬底之间。 支撑构件可定位在腔室中以在其上接收衬底，并且可进一步定位以使衬底穿过屏蔽件，从而将环组件提离屏蔽。 沉积完成后，支撑构件通过屏蔽件缩回，以将外环重新定位在屏蔽上。 在其被重新定位在护罩上之前，内环继续向下移动，衬底支撑构件短距离。 在衬底和外环之间形成沉积材料层的情况下，内圈包括多个接头，当外环具有内环时内环继续向下，接触衬底以将其压出环组件 被定位在盾牌上。

公开(公告)号：US5589224A

公开(公告)日：1996-12-31

申请号：US310617

申请日：1994-09-22

申请人： Avi Tepman ,  Takeshi Jinbo ,  Hiroyuki Takahama ,  Akihiko Saito

发明人： Avi Tepman ,  Takeshi Jinbo ,  Hiroyuki Takahama ,  Akihiko Saito

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/4585

摘要： The present invention provides a shield arrangement that prevents deposition in the area of the chamber surrounding the substrate. This shield arrangement is equipped with a wall-like member which surrounds a substrate, and includes a projecting annular flange and a substrate support which extends in the horizontal direction beyond the substrate, and includes a groove therein. The annular flange is received in the groove to shield the deposition region of the chamber from the remainder of the chamber.

摘要翻译： 本发明提供一种屏蔽装置，其防止在围绕衬底的腔室的区域中的沉积。 该屏蔽装置配备有围绕基板的壁状构件，并且包括突出的环形凸缘和在水平方向上延伸超过基板的基板支撑，并且在其中包括凹槽。 环形凸缘容纳在凹槽中，以将腔室的沉积区域与腔室的其余部分隔离。

公开(公告)号：US20080279672A1

公开(公告)日：2008-11-13

申请号：US11747525

申请日：2007-05-11

申请人： ROBERT Z. BACHRACH ,  Avi Tepman ,  Alexander S. Polyak

发明人： ROBERT Z. BACHRACH ,  Avi Tepman ,  Alexander S. Polyak

IPC分类号： B65G59/00

CPC分类号： B65G65/00 ,  B65G37/02 ,  B65G2201/0297 ,  H01L21/67236 ,  H01L21/67276 ,  H01L21/67715 ,  H01L21/67721 ,  H01L21/67727 ,  H01L21/67733 ,  H01L21/67748 ,  H01L21/67769

摘要： The present invention generally comprises equipment for an automated high volume batch work-piece manufacturing factory comprising work-piece handling and work-piece processing in a high productivity factory architecture capable of producing 1,000 or more work-piece an hour. The work-pieces may be presented to the equipment from a stacked supply to a parallel array. Additionally, the work-pieces may be transferred between manufacturing architectures by an array to array batch transfer. The work-pieces may be transferred within the manufacturing architecture in a parallel to parallel batch transfer operation. The robotic operations may be between robotic devices, between robotic devices and processing equipment, and within processing equipment.

摘要翻译： 本发明通常包括用于自动化大批量批量工件制造工厂的设备，其包括能够每小时生产1,000个或更多个工件的高生产率工厂结构中的工件处理和工件加工。 工件可以从堆叠的供应提供给设备到并行阵列。 另外，工件可以通过阵列在制造架构之间转移到阵列批量传输。 工件可以在并行批量传输操作的同时在制造架构内转移。 机器人操作可以在机器人设备之间，机器人设备和处理设备之间以及处理设备内。

公开(公告)号：US20080057836A1

公开(公告)日：2008-03-06

申请号：US11927048

申请日：2007-10-29

申请人： Alexander Polyak ,  Avi Tepman

发明人： Alexander Polyak ,  Avi Tepman

IPC分类号： B24B1/00

CPC分类号： B24B53/017 ,  H01L21/31053

摘要： In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.

摘要翻译： 在第一方面，提供了用于化学机械抛光（CMP）工艺的第一设备。 第一装置包括（1）可旋转构件; （2）适于接收和保持调节盘的端部执行器; 和（3）设置在可旋转构件和末端执行器之间的弹性装置。 弹性装置是（a）适于通过来自可旋转构件的扭矩旋转末端执行器，以及（b）柔性可伸展的，以便向末端执行器施加力，同时允许末端执行器偏离与 可旋转构件，以便调节盘的调节表面与被调节的垫的不规则抛光表面相一致。 提供了许多其它方面，包括使用液体或气体来阻止抛光浆料或碎屑进入调节头的方法和装置。

公开(公告)号：US20060070875A1

公开(公告)日：2006-04-06

申请号：US11229139

申请日：2005-09-15

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/00 ,  C25B11/00

CPC分类号： C23C14/34 ,  H01J37/321 ,  H01J37/34

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.