公开(公告)号：US5841688A

公开(公告)日：1998-11-24

申请号：US883738

申请日：1997-06-27

申请人： Shunichi Sukegawa ,  Hugh P. McAdams ,  Tadashi Tachibana ,  Katsuo Komatsuzaki ,  Takeshi Sakai

发明人： Shunichi Sukegawa ,  Hugh P. McAdams ,  Tadashi Tachibana ,  Katsuo Komatsuzaki ,  Takeshi Sakai

IPC分类号： G11C5/06 ,  G11C8/14 ,  G11C11/408 ,  H01L21/8242 ,  H01L27/108 ,  G11C5/00

CPC分类号： H01L27/10891 ,  G11C11/408 ,  G11C5/063 ,  G11C8/14 ,  H01L27/10897

摘要： A circuit is designed with a first lower conductor (500) having two ends. One end of the first lower conductor is coupled to a first signal source (386). A first upper conductor (544) has two ends and is spaced apart from the first lower conductor by a distance less than an allowable spacing between adjacent lower conductors. One end of the first upper conductor is coupled to a second signal source (384). A second upper conductor (508) has two ends. One end of the second upper conductor is coupled to another end of the first lower conductor for receiving a signal from the first signal source. A second lower conductor (552) has two ends and is spaced apart from the second upper conductor by a distance less than the allowable spacing between adjacent lower conductors. One end of the second lower conductor is coupled to another end of the first upper conductor for receiving a signal from the second signal source. Since the upper and lower conductors are spaced apart by a distance less than an allowable spacing between adjacent lower conductors, layout area is conserved. Total resistance of conductors connected to each signal source is the same, so signal delay is the same.

摘要翻译： 电路设计有具有两端的第一下导体（500）。 第一下导体的一端耦合到第一信号源（386）。 第一上导体（544）具有两个端部，并且与第一下导体间隔一个小于相邻下导体之间允许间隔的距离。 第一上导体的一端耦合到第二信号源（384）。 第二上导体（508）具有两端。 第二上导体的一端耦合到第一下导体的另一端，用于接收来自第一信号源的信号。 第二下导体（552）具有两个端部，并且与第二上导体间隔一个小于相邻下导体之间允许间隔的距离。 第二下导体的一端耦合到第一上导体的另一端，用于从第二信号源接收信号。 由于上导体和下导体间隔距离小于相邻下导体之间的允许间距，所以布局面积是保守的。 连接到每个信号源的导体的总电阻是相同的，因此信号延迟是相同的。

公开(公告)号：US5700052A

公开(公告)日：1997-12-23

申请号：US557202

申请日：1995-11-14

申请人： Ryokichi Yamazaki ,  Takeshi Sakai ,  Fukushi Kawakami

发明人： Ryokichi Yamazaki ,  Takeshi Sakai ,  Fukushi Kawakami

IPC分类号： A47C7/56 ,  A47C1/12 ,  A47C1/121 ,  A47C31/00

CPC分类号： A47C1/12

摘要： A chair includes a main body with a seat, openings formed in the greater part of the lower surface of the seat, a sound absorbing structure contained in the seat while facing the openings, and a louver having a series of openings defined with a number of slats that may be turned for opening and closing. The louver is located in front of the series of openings. When the seat is unoccupied, the slats of the louver are turned for opening. When the seat is occupied, the slats are turned for closing. The chair is adequate for concert halls or theaters.

摘要翻译： 座椅包括具有座椅的主体，形成在座椅的下表面的大部分中的开口，包含在座椅中同时面向开口的吸声结构，以及具有限定有多个开口的一系列开口的百叶窗 可以打开和关闭的板条。 百叶窗位于一系列开口的前面。 当座椅未被占用时，百叶窗的板条转动以打开。 当座椅被占用时，板条转动关闭。 椅子足够用于音乐厅或剧院。

公开(公告)号：US5104444A

公开(公告)日：1992-04-14

申请号：US390256

申请日：1989-08-07

申请人： Masahiko Shioda ,  Masashi Arita ,  Katsuji Tanizaki ,  Koue Ohdawa ,  Takeshi Sakai

发明人： Masahiko Shioda ,  Masashi Arita ,  Katsuji Tanizaki ,  Koue Ohdawa ,  Takeshi Sakai

IPC分类号： C22C21/02 ,  C22C1/04 ,  C22C21/00 ,  F16C33/12

CPC分类号： C22C1/0416 ,  C22C21/003 ,  F16C33/121 ,  Y10T428/12014

摘要： An aluminum alloy is prepared from an aluminum alloy powder having a composition of:lubricating componentPb: 3 to 15 Wt %;hardening componentSi: 1 to 12 Wt %;rainforcement componentone or more selected among Cu, Cr, Mg, Mn, NiZn, Fe and: 0.2 to 5.0 Wt %;and remainder of aluminum as principal material or matrix.To the aluminum alloy powder set forth above, powder state Pb in 3 to 12 Wt % is added. With the mixture of the aluminium alloy powder and Pb powder, a billet is formed. For the billet, extrustion process is performed in a extrusion ratio greater than or equal to 40. In the extruded block, Si particle dispersed in the aluminum matrix is in a grain size smaller than or equal to 12 .mu.m. Furthermore, at least of half of added Pb power particle is dispersed to have greater than or equal to 0.74 of circularity coefficient.

公开(公告)号：US4560764A

公开(公告)日：1985-12-24

申请号：US508180

申请日：1983-06-27

申请人： Michitaro Fujimoto ,  Giichi Funazo ,  Hirokazu Seki ,  Shuhei Takamatsu ,  Takeshi Sakai

发明人： Michitaro Fujimoto ,  Giichi Funazo ,  Hirokazu Seki ,  Shuhei Takamatsu ,  Takeshi Sakai

IPC分类号： C07D233/54 ,  C07D417/06

CPC分类号： C07D233/64 ,  C07D417/06

摘要： N-Cyano-N',S-ethylene-N'-([4-methyl-5-imidazolyl)methyl]isothiourea which is of value as an intermediate in the production of cimetidine and a process for its production are provided.

摘要翻译： 提供了在西咪替丁生产中作为中间体有价值的N-氰基-N'，S-乙烯-N' - （[4-甲基-5-咪唑基）甲基]异硫脲及其生产方法。

公开(公告)号：US09858339B2

公开(公告)日：2018-01-02

申请号：US14110069

申请日：2012-03-28

申请人： Hitoshi Akiyama ,  Hiroyuki Iwase ,  Takeshi Sakai ,  Takuro Sone

发明人： Hitoshi Akiyama ,  Hiroyuki Iwase ,  Takeshi Sakai ,  Takuro Sone

IPC分类号： G06F17/00 ,  G06F17/30 ,  H04N21/414 ,  H04N21/442 ,  H04N21/422 ,  H04N21/4784 ,  H04N21/439 ,  G06Q30/02 ,  H04H60/48 ,  H04H60/58

CPC分类号： G06F17/30743 ,  G06Q30/0239 ,  H04H60/48 ,  H04H60/58 ,  H04H2201/37 ,  H04N21/41407 ,  H04N21/42203 ,  H04N21/4394 ,  H04N21/44204 ,  H04N21/4784

摘要： An information providing system includes a sound emission device for emitting, as sound wave, identification information modulated into a sound signal, an identification information resolution server including a mapping table in which the identification information, valid time information and the address information of a content are stored to be associated, and a mobile terminal device for transmitting the identification information demodulated from a picked-up sound wave to the identification information resolution server thereby obtaining address information and accessing the content using the obtained address information. When received the identification information from the mobile terminal device, the identification information resolution server returns the address information of a corresponding content to the mobile terminal device when the time information is within a valid time.

公开(公告)号：US20150140690A1

公开(公告)日：2015-05-21

申请号：US14564227

申请日：2014-12-09

申请人： Takeshi Sakai ,  Tatsuro Yoshida ,  Kazuhiro Yoshikawa ,  Shigetoshi Sugawa

发明人： Takeshi Sakai ,  Tatsuro Yoshida ,  Kazuhiro Yoshikawa ,  Shigetoshi Sugawa

IPC分类号： H01L21/306 ,  H01L21/66

CPC分类号： H01L21/30604 ,  H01L21/6708 ,  H01L22/26 ,  H01L27/1464 ,  H01L27/14687

摘要： There is provided an etching method for a semiconductor product. The semiconductor product having, on a substrate, an SiO2 layer, and an Si layer with a free surface and directly stacked on the SiO2 layer is prepared. The Si layer is etched. Etching is performed while supplying an etching solution from a side of the free surface using high-concentration fluonitric acid as the etching solution, and etching is continued by switching to fluonitric acid having a concentration lower than that of the fluonitric acid immediately before or after at least part of a surface of the SiO2 layer immediately under the Si layer is exposed.

摘要翻译： 提供了半导体产品的蚀刻方法。 制备在衬底上具有SiO 2层和具有自由表面并直接层叠在SiO 2层上的Si层的半导体产品。 Si层被蚀刻。 使用高浓度氟酸作为蚀刻溶液从自由表面侧供给蚀刻溶液进行蚀刻，并且在紧接着在之前或之后切换到浓度低于荧光酮浓度的氟硝酸继续蚀刻 露出Si层正下方的SiO 2层表面的最少部分。

公开(公告)号：US08670082B2

公开(公告)日：2014-03-11

申请号：US13242283

申请日：2011-09-23

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai

IPC分类号： G02F1/136 ,  H01L29/04

CPC分类号： H01L29/66765 ,  G02F1/136209 ,  H01L29/78633

摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.

摘要翻译： 提供薄膜晶体管，显示装置和液晶显示装置。 薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为 与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠 照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

公开(公告)号：US08310611B2

公开(公告)日：2012-11-13

申请号：US12536066

申请日：2009-08-05

申请人： Takuo Kaitoh ,  Toshio Miyazawa ,  Takeshi Sakai

发明人： Takuo Kaitoh ,  Toshio Miyazawa ,  Takeshi Sakai

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L29/458 ,  H01L29/78618

摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.

摘要翻译： 提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

公开(公告)号：US08049255B2

公开(公告)日：2011-11-01

申请号：US12155504

申请日：2008-06-05

申请人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L31/062

CPC分类号： H01L27/1214 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.

摘要翻译： 半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。 半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。 源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。 每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

公开(公告)号：US20110186848A1

公开(公告)日：2011-08-04

申请号：US13064733

申请日：2011-04-12

申请人： Takeshi Sakai

发明人： Takeshi Sakai

IPC分类号： H01L33/16 ,  H01L29/04 ,  H01L29/786 ,  H01L33/08

CPC分类号： H01L29/78678 ,  H01L29/41733 ,  H01L29/78609 ,  H01L29/78696

摘要： A semiconductor device can easily reduce a leak current which flows when a reversely-staggered-type TFT element in which an active layer is made of polycrystalline semiconductor is turned off. The semiconductor device includes a reversely-staggered-type TFT element in which a semiconductor layer, a source electrode and a drain electrode are arranged on a surface of an insulation film, and a portion of the source electrode and a portion of the drain electrode respectively get over the semiconductor layer. The active layer of the semiconductor layer is mainly made of polycrystalline semiconductor constituted of strip-shaped crystals elongated in the channel length direction of the TFT element, and is configured in a plan view such that the source electrode and the drain electrode are respectively pulled out from positions above the active layer in the channel width direction of the TFT element and in the directions opposite to each other, and the source electrode intersects with only one side out of two sides of the active layer which extend in the channel length direction, and the drain electrode intersects with only another side out of two sides of the active layer which extend in the channel length direction.