公开(公告)号：US10784145B2

公开(公告)日：2020-09-22

申请号：US16264071

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Wolfgang Lehnert ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl ,  Roland Rupp

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/304 ,  H01L21/20 ,  H01L21/78

Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

公开(公告)号：US20190244853A1

公开(公告)日：2019-08-08

申请号：US16264071

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Wolfgang Lehnert ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl ,  Roland Rupp

IPC: H01L21/762 ,  H01L21/304 ,  H01L21/02 ,  H01L21/20

Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

公开(公告)号：US10241088B2

公开(公告)日：2019-03-26

申请号：US15136469

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Gottfried Beer ,  Sebastian Beer ,  Alfons Dehe ,  Franz Jost ,  Stefan Kolb ,  Guenther Ruhl ,  Rainer Markus Schaller

IPC: G01N29/24 ,  G01N29/032

Abstract: A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.

公开(公告)号：US10209212B2

公开(公告)日：2019-02-19

申请号：US15043701

申请日：2016-02-15

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Thomas Hirsch ,  Gerhard Poeppel ,  Herbert Roedig

IPC: G01R17/00 ,  G01N27/22 ,  G01N15/10

Abstract: According to various embodiments, a sensor arrangement for particle analysis may include: a base electrode configured to generate an electrical field for particle attraction; a support layer disposed over the base electrode; a sensor array disposed over the support layer and including or formed from a plurality of sensor elements, wherein each sensor element of the plurality of sensor elements is configured to generate or modify an electrical signal in response to a particle at least one of adsorbed to and approaching the sensor element; and an electrical contact structure may include or be formed from a plurality of contact lines, wherein each contact line of the plurality of contact lines is electrically connected to a respective sensor element of the plurality of sensor elements, such that each sensor element of the plurality of sensor elements is addressable via the contact structure.

公开(公告)号：US10164019B2

公开(公告)日：2018-12-25

申请号：US15210106

申请日：2016-07-14

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Guenther Ruhl ,  Hans-Joachim Schulze

IPC: H01L29/15 ,  H01L29/16 ,  H01L29/36 ,  H01L29/08 ,  H01L29/417 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L29/41

Abstract: A method for forming a semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate. The method further includes forming a silicon carbide layer on the at least one graphene layer.

公开(公告)号：US10134848B2

公开(公告)日：2018-11-20

申请号：US15464405

申请日：2017-03-21

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Hans-Joachim Schulze ,  Thomas Zimmer ,  Gunther Lippert

IPC: H01L21/20 ,  H01L29/16 ,  H01L21/762 ,  H01L21/02 ,  H01L21/18 ,  H01L21/265 ,  H01L21/324 ,  H01L21/56 ,  H01L21/78 ,  H01L29/04 ,  H01L29/165 ,  H01L21/683 ,  H01L29/06

Abstract: A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide wafer to the carrier wafer; splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting; and forming a graphene material on the silicon carbide layer.

公开(公告)号：US10107867B2

公开(公告)日：2018-10-23

申请号：US14631443

申请日：2015-02-25

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Jochen Dangelmaier ,  Franz Michael Darrer ,  Thomas Mueller ,  Mathias Vaupel ,  Manfred Fries ,  Guenther Ruhl ,  Horst Theuss ,  Matthias Rose ,  Stephan Auer ,  Tue Fatt David Wee ,  Sie Boo Chiang

IPC: H01M10/48 ,  G01R31/36 ,  H01M10/42 ,  H04Q9/00 ,  H01M10/0525

Abstract: A sensor arrangement according to an embodiment includes a substrate, and at least one sensor and a control circuit mounted on the substrate, wherein the at least one sensor and the control circuit are located on the substrate to be mountable inside a battery cell and outside the battery cell, respectively.

公开(公告)号：US20180292340A1

公开(公告)日：2018-10-11

申请号：US15948665

申请日：2018-04-09

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: G01N27/12

Abstract: A fluid sensor comprises a sensor material configured to come into contact at a surface region of same with a fluid and to obtain a first temporal change of a resistance value of the sensor material on the basis of the contact in a first sensor configuration and to obtain a second temporal change of the resistance value of the sensor material on the basis of the contact in a second sensor configuration. The fluid sensor comprises an output element configured to provide a sensor signal on the basis of the first and second temporal change of the resistance value.

公开(公告)号：US09987830B2

公开(公告)日：2018-06-05

申请号：US14828557

申请日：2015-08-18

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: C01B31/02 ,  B32B37/02 ,  B32B38/10 ,  B32B37/00 ,  B05D1/32 ,  C01B32/194

CPC classification number: B32B37/025 ,  B05D1/322 ,  B32B38/10 ,  B32B2307/202 ,  B32B2313/04 ,  B32B2457/00 ,  C01B32/194 ,  H01B1/04

Abstract: According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.

公开(公告)号：US20180016132A1

公开(公告)日：2018-01-18

申请号：US15646161

申请日：2017-07-11

Applicant: Infineon Technologies AG

Inventor： Matthias Koenig ,  Guenther Ruhl

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/00476 ,  B81C2201/0109 ,  B81C2201/0187 ,  B81C2201/0197

Abstract: A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.