公开(公告)号：US09368436B2

公开(公告)日：2016-06-14

申请号：US14614119

申请日：2015-02-04

Applicant: Infineon Technologies AG

Inventor： Manfred Schneegans ,  Andreas Meiser ,  Martin Mischitz ,  Michael Roesner ,  Michael Pinczolits

IPC: H01L21/78 ,  H01L23/528 ,  H01L23/495 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/49562 ,  H01L21/4807 ,  H01L21/56 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/291 ,  H01L23/3121 ,  H01L23/49503 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/32 ,  H01L24/49 ,  H01L24/94 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/03002 ,  H01L2224/0346 ,  H01L2224/03505 ,  H01L2224/03602 ,  H01L2224/0391 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/0603 ,  H01L2224/08245 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0532 ,  H01L2924/05341 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/03

Abstract: A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.

Abstract translation: 一种用于形成半导体器件的方法包括在具有第一侧和第二侧的半导体衬底中形成器件区域。 器件区域邻近第一侧形成。 该方法还包括在半导体衬底的第一侧上形成晶种层，并在种子层上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层内的种子层上形成接触焊盘。 该方法还包括在形成接触焊盘之后去除图案化的抗蚀剂层，以暴露图案化抗蚀剂层下面的种子层的一部分，以及在种子层的暴露部分上形成保护层。