公开(公告)号：US20150177311A1

公开(公告)日：2015-06-25

申请号：US14135408

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Khaled Ahmed

IPC: G01R31/26 ,  G01N27/00 ,  G01N33/00 ,  H01L29/26

CPC classification number: G01R31/2648 ,  G01N33/00 ,  G01N2033/0095 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/263 ,  H01L29/66969 ,  H01L29/78693

Abstract: Embodiments described herein provide methods and systems for evaluating indium-gallium-zinc oxide (IGZO) with respect to negative bias illumination stress (NBIS). A plurality of IGZO devices is formed. Each of the plurality of IGZO devices includes a semiconductor substrate and an IGZO layer formed above the semiconductor substrate. A processing condition used to form at least two of the plurality of IGZO devices is varied in a combinatorial manner. A bias is applied to the semiconductor substrate of each of the plurality of IGZO devices. A current flow through each of the plurality of IGZO devices while the bias is applied is measured.

Abstract translation: 本文描述的实施例提供了关于负偏压照明应力（NBIS）评估铟镓锌氧化物（IGZO）的方法和系统。 形成多个IGZO器件。 多个IGZO器件中的每一个包括半导体衬底和形成在半导体衬底之上的IGZO层。 用于形成多个IGZO装置中的至少两个的处理条件以组合方式变化。 对多个IGZO器件中的每一个的半导体衬底施加偏压。 测量施加偏压时通过多个IGZO器件中的每一个的电流。

公开(公告)号：US20150176124A1

公开(公告)日：2015-06-25

申请号：US14135266

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Khaled Ahmed ,  Chen-An Chen ,  Wenxian Zhu

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45551

Abstract: Systems and methods for rapid generation of ALD saturation curves using segmented spatial ALD are disclosed. Methods include introducing a substrate, having a plurality of substrate segment regions, into a processing chamber. The substrate may be disposed upon a pedestal within the chamber. Sequentially exposing the plurality of segment regions to a precursor within the chamber at a first processing temperature. Afterwards, purging the precursor from the chamber and then sequentially exposing each plurality of segment regions to a reactant within the chamber at the first processing temperature. Afterwards, purging the reactant from the chamber. Repeat sequentially exposing the plurality of segment regions to the precursor and the reactant for a plurality of cycles. Each segment region may be sequentially exposed to the precursor for a unique processing time. The pedestal may be rotated prior to exposing each next segment region to the precursor and the reactant.

Abstract translation: 公开了使用分段空间ALD快速产生ALD饱和曲线的系统和方法。 方法包括将具有多个衬底段区域的衬底引入处理室。 衬底可以设置在腔室内的基座上。 在第一处理温度下将多个区段区域顺序暴露于室内的前体。 然后，从室中吹扫前体，然后在第一处理温度下将每个多个区段顺序地暴露于室内的反应物。 之后，从反应室中清除反应物。 重复连续暴露多个段区域到前体和反应物多个循环。 每个段区域可以顺序地暴露于前体以获得独特的处理时间。 在将每个下一个区段暴露于前体和反应物之前，基座可以旋转。

公开(公告)号：US20150170912A1

公开(公告)日：2015-06-18

申请号：US14105871

申请日：2013-12-13

Applicant: Intermolecular, Inc.

Inventor： Khaled Ahmed

IPC: H01L21/02 ,  C23C14/24 ,  C23C16/50 ,  H01L21/67 ,  C23C16/455

CPC classification number: H01L21/02565 ,  C23C14/021 ,  C23C14/08 ,  C23C14/081 ,  C23C14/086 ,  C23C14/34 ,  C23C14/568 ,  C23C16/0227 ,  C23C16/40 ,  C23C16/403 ,  C23C16/407 ,  C23C16/45525 ,  C23C16/54 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02658 ,  H01L21/28264 ,  H01L21/67017

Abstract: Embodiments provided herein describe systems and methods for forming semiconductor devices. A semiconductor substrate is provided. The semiconductor substrate is exposed to bromine radicals, hydrogen radicals, or a combination thereof. An oxide layer is formed above the semiconductor substrate. The semiconductor substrate is held within a controlled atmosphere at least from the completion of the exposing of the semiconductor substrate to bromine radicals, hydrogen radicals, or a combination thereof and the beginning of the forming of the oxide layer.

Abstract translation: 本文提供的实施例描述了用于形成半导体器件的系统和方法。 提供半导体衬底。 半导体衬底暴露于溴自由基，氢自由基或其组合。 在半导体衬底的上方形成氧化物层。 半导体衬底至少从半导体衬底暴露于溴自由基，氢自由基或其组合以及氧化层的形成开始至少保持在受控的气氛中。

公开(公告)号：US20150140696A1

公开(公告)日：2015-05-21

申请号：US14085706

申请日：2013-11-20

Applicant: Intermolecular, Inc.

Inventor： Khaled Ahmed

IPC: H01L21/324 ,  H01L21/22 ,  H01L21/66 ,  H01L21/02

CPC classification number: H01L21/324 ,  B01J2219/0036 ,  B01J2219/00441 ,  B01J2219/00443 ,  B01J2219/00495 ,  B01J2219/00596 ,  B01J2219/00745 ,  B01J2219/00756 ,  C23C16/04 ,  C23C16/45563 ,  C23C16/45574 ,  C40B40/18 ,  C40B50/14 ,  C40B60/14 ,  H01L21/22 ,  H01L21/2252 ,  H01L21/2254 ,  H01L21/2258 ,  H01L22/14 ,  H01L22/20

Abstract: One or more small spot showerhead apparatus are used to provide dopant exposure and/or to deposit materials using CVD, PECVD, ALD, or PEALD on small spots in a site isolated, combinatorial manner. The small spot showerheads may be configured within a larger combinatorial showerhead to allow multi-layer film stacks to be deposited in a combinatorial manner. Anneal processes where the area of the process can be controlled such as laser annealing or site-isolated rapid thermal processing (RTP) can be used to vary the annealing conditions in a combinatorial manner.

Abstract translation: 使用一个或多个小型喷头装置以分离，组合的方式在小斑点上提供掺杂剂暴露和/或沉积材料，使用CVD，PECVD，ALD或PEALD。 小型喷头可配置在更大的组合喷淋头内，以允许以组合方式沉积多层胶片堆叠。 可以使用可以控制过程区域的退火方法，例如激光退火或位置分离快速热处理（RTP），以组合方式改变退火条件。