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公开(公告)号：US10043976B2
公开(公告)日：2018-08-07
申请号：US15488746
申请日：2017-04-17
发明人： Shu-Jen Han , Bharat Kumar , George S. Tulevski
IPC分类号： H01L51/00 , C07C259/06 , C07F9/38 , H01L21/02 , C01B31/02
摘要： Structures and methods that include selective electrostatic placement based on a dipole-to-dipole interaction of electron-rich carbon nanotubes onto an electron-deficient pre-patterned surface. The structure includes a substrate with a first surface having a first isoelectric point and at least one additional surface having a second isoelectric point. A self-assembled monolayer is selectively formed on the first surface and includes an electron deficient compound including a deprotonated pendant hydroxamic acid or a pendant phosphonic acid group or a pendant catechol group bound to the first surface. An organic solvent can be used to deposit the electron rich carbon nanotubes on the self-assembled monolayer.
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公开(公告)号：US09884827B2
公开(公告)日：2018-02-06
申请号：US15001802
申请日：2016-01-20
IPC分类号： H01L29/06 , C07D213/79 , C07D213/76 , B82Y10/00 , B82Y40/00 , H01L51/00 , H01L51/05
CPC分类号： C07D213/79 , B82Y10/00 , B82Y40/00 , C07D213/76 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0049 , H01L51/0558
摘要： A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.
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公开(公告)号：US09691987B1
公开(公告)日：2017-06-27
申请号：US15298620
申请日：2016-10-20
发明人： Shu-Jen Han , Bharat Kumar , George S. Tulevski
IPC分类号： H01L51/00 , C07C259/06 , C07F9/38
CPC分类号： H01L51/0048 , C01B31/0226 , C01B31/0253 , C01B32/16 , C01B32/174 , C07F9/3808 , H01L21/02606 , H01L51/0003
摘要： Structures and methods that include selective electrostatic placement based on a dipole-to-dipole interaction of electron-rich carbon nanotubes onto an electron-deficient pre-patterned surface. The structure includes a substrate with a first surface having a first isoelectric point and at least one additional surface having a second isoelectric point. A self-assembled monolayer is selectively formed on the first surface and includes an electron deficient compound including a deprotonated pendant hydroxamic acid or a pendant phosphonic acid group or a pendant catechol group bound to the first surface. An organic solvent can be used to deposit the electron rich carbon nanotubes on the self-assembled monolayer.
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公开(公告)号：US09685530B2
公开(公告)日：2017-06-20
申请号：US15182726
申请日：2016-06-15
IPC分类号： H01L29/66 , H01L29/40 , H01L29/417 , H01L29/78 , H01L21/768 , H01L21/02 , H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/3105 , H01L29/51
CPC分类号： H01L29/66545 , H01L21/02172 , H01L21/0226 , H01L21/28247 , H01L21/31051 , H01L21/31133 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/32136 , H01L21/76802 , H01L21/76829 , H01L21/76834 , H01L21/76897 , H01L29/401 , H01L29/41775 , H01L29/517 , H01L29/66795 , H01L29/78
摘要： A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.
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公开(公告)号：US09543534B1
公开(公告)日：2017-01-10
申请号：US14949992
申请日：2015-11-24
CPC分类号： H01L51/055 , H01L51/0021 , H01L51/0048 , H01L51/0516 , H01L51/0541 , H01L51/105
摘要： A carbon nanotube semiconductor device includes at least one carbon nanotube disposed on an insulator portion of a substrate. The at least one carbon nanotube includes a non-doped channel portion interposed between a first doped source/drain portion and a second doped source/drain portion. A first source/drain contact stack is disposed on the first doped source/drain portion and an opposing second source/drain contact stack is disposed on the second doped source/drain portion. A replacement metal gate stack is interposed between the first and second source/drain contact stacks, and on the at least one carbon nanotube. The first and second doped source/drain portions are each vertically aligned with an inner edge of the first and second contact stacks, respectively.
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公开(公告)号：US20160308026A1
公开(公告)日：2016-10-20
申请号：US15189579
申请日：2016-06-22
IPC分类号： H01L29/66 , H01L29/78 , H01L21/768 , H01L21/311 , H01L21/3105
CPC分类号： H01L29/66545 , H01L21/02172 , H01L21/0226 , H01L21/28247 , H01L21/31051 , H01L21/31133 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/32136 , H01L21/76802 , H01L21/76829 , H01L21/76834 , H01L21/76897 , H01L29/401 , H01L29/41775 , H01L29/517 , H01L29/66795 , H01L29/78
摘要： A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.
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公开(公告)号：US20160293731A1
公开(公告)日：2016-10-06
申请号：US15182726
申请日：2016-06-15
IPC分类号： H01L29/66 , H01L29/40 , H01L21/311 , H01L21/768 , H01L21/02 , H01L21/3213 , H01L21/28 , H01L29/417
CPC分类号： H01L29/66545 , H01L21/02172 , H01L21/0226 , H01L21/28247 , H01L21/31051 , H01L21/31133 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/32136 , H01L21/76802 , H01L21/76829 , H01L21/76834 , H01L21/76897 , H01L29/401 , H01L29/41775 , H01L29/517 , H01L29/66795 , H01L29/78
摘要： A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.
摘要翻译： 一种用于制造场效应晶体管的方法，包括在场效应晶体管中螯合分子屏蔽至替代金属栅极。 该方法还可以包括在一个或多个沉积步骤中在体电介质材料上形成图案化电介质层和栅介电阻挡层。 该方法可以包括在沉积接触栅极电介质阻挡层和置换金属栅极的介电帽之前去除分子掩模并暴露部分栅极电介质势垒。
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公开(公告)号：US09419097B2
公开(公告)日：2016-08-16
申请号：US14551322
申请日：2014-11-24
IPC分类号： H01L29/66 , H01L29/78 , H01L29/51 , H01L29/423 , H01L21/283
CPC分类号： H01L29/66545 , H01L21/02172 , H01L21/0226 , H01L21/28247 , H01L21/31051 , H01L21/31133 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/32136 , H01L21/76802 , H01L21/76829 , H01L21/76834 , H01L21/76897 , H01L29/401 , H01L29/41775 , H01L29/517 , H01L29/66795 , H01L29/78
摘要： A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.
摘要翻译： 一种用于制造场效应晶体管的方法，包括在场效应晶体管中螯合分子屏蔽至替代金属栅极。 该方法还可以包括在一个或多个沉积步骤中在体电介质材料上形成图案化电介质层和栅介电阻挡层。 该方法可以包括在沉积接触栅极电介质阻挡层和置换金属栅极的介电帽之前去除分子掩模并暴露部分栅极电介质势垒。
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公开(公告)号：US20160149016A1
公开(公告)日：2016-05-26
申请号：US14551322
申请日：2014-11-24
IPC分类号： H01L29/66 , H01L21/283 , H01L29/423 , H01L29/78 , H01L29/51
CPC分类号： H01L29/66545 , H01L21/02172 , H01L21/0226 , H01L21/28247 , H01L21/31051 , H01L21/31133 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/32136 , H01L21/76802 , H01L21/76829 , H01L21/76834 , H01L21/76897 , H01L29/401 , H01L29/41775 , H01L29/517 , H01L29/66795 , H01L29/78
摘要： A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.
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公开(公告)号：US20160137605A1
公开(公告)日：2016-05-19
申请号：US15001802
申请日：2016-01-20
IPC分类号： C07D213/79
CPC分类号： C07D213/79 , B82Y10/00 , B82Y40/00 , C07D213/76 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0049 , H01L51/0558
摘要： A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.
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