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公开(公告)号：US07960808B2
公开(公告)日：2011-06-14
申请号：US11844109
申请日：2007-08-23
申请人： Geoffrey W. Burr , Chandrasekharan Kothandaraman , Chung Hon Lam , Xiao Hu Liu , Stephen M. Rossnagel , Christy S. Tyberg , Robert L. Wisnieff
发明人： Geoffrey W. Burr , Chandrasekharan Kothandaraman , Chung Hon Lam , Xiao Hu Liu , Stephen M. Rossnagel , Christy S. Tyberg , Robert L. Wisnieff
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L23/5252 , H01L45/06 , H01L45/1206 , H01L45/1226 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.
摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。
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公开(公告)号：US20080318365A1
公开(公告)日：2008-12-25
申请号：US12200352
申请日：2008-08-28
IPC分类号： H01L21/60
CPC分类号： H01L23/556 , H01L21/304 , H01L21/481 , H01L24/11 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/16 , H01L2224/16113 , H01L2224/16225 , H01L2224/16227 , H01L2224/29111 , H01L2224/73204 , H01L2224/81801 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/2064 , H01L2924/3025 , H01L2224/13111 , H01L2924/00014
摘要： A structure fabrication method. First, an integrated circuit including N chip electric pads is provided electrically connected to a plurality of devices on the integrated circuit. Then, an interposing shield having a top side and a bottom side and having N electric conductors in the interposing shield is provided being exposed to a surrounding ambient at the top side but not at the bottom side. Next, the integrated circuit is bonded to the top side of the interposing shield such that the N chip electric pads are in electrical contact with the N electric conductors. Next, the bottom side of the interposing shield is polished so as to expose the N electric conductors to the surrounding ambient at the bottom side of the interposing shield. Then, N solder bumps are formed on the polished bottom side of the interposing shield and in electrical contact with the N electric conductors.
摘要翻译： 一种结构制造方法。 首先，将包括N个芯片电焊盘的集成电路电连接到集成电路上的多个器件。 然后，设置具有顶侧和底侧并且在插入式屏蔽中具有N个电导体的插入式屏蔽件，其暴露于顶侧周围的环境而不是在底侧。 接下来，集成电路接合到中间屏蔽的顶侧，使得N个芯片电极焊盘与N个导电体电接触。 接下来，对中介屏蔽的底面进行抛光，以将N根电导体暴露于插入式屏蔽的底侧周围环境。 然后，在中间屏蔽的抛光底面上形成N个焊料凸块，并与N个导电体电接触。
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公开(公告)号：US06476787B1
公开(公告)日：2002-11-05
申请号：US09186313
申请日：1998-11-04
IPC分类号： G09G336
CPC分类号： G02F1/13624 , G09G3/3659 , G09G2300/0804 , G09G2300/0814 , G09G2310/0297
摘要： An active matrix display in accordance with the present invention includes a plurality of pixels arranged in an array. At least two transistors are included for coupling to each pixel, and the transistors are positioned within the array for switching the pixels on and off according to data and gate signals. A plurality of control lines are coupled to the transistors of each pixel such that the control lines provide multiplexing for at least one of data signal multiplexing and gate signal multiplexing.
摘要翻译： 根据本发明的有源矩阵显示器包括排列成阵列的多个像素。 包括用于耦合到每个像素的至少两个晶体管，并且晶体管位于阵列内，用于根据数据和门信号开启和关闭像素。 多个控制线耦合到每个像素的晶体管，使得控制线为数据信号复用和门信号复用中的至少一个提供复用。
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公开(公告)号：US08855452B2
公开(公告)日：2014-10-07
申请号：US13353118
申请日：2012-01-18
CPC分类号： G02B6/4204 , G02B6/34
摘要： A silicon photonic chip is provided. An active silicon layer that includes a photonic device is on a front side of the silicon photonic chip. A silicon substrate that includes an etched backside cavity is on a backside of the silicon photonic chip. A microlens is integrated into the etched backside cavity. A buried oxide layer is located between the active silicon layer and the silicon substrate. The buried oxide layer is an etch stop for the etched backside cavity.
摘要翻译： 提供硅光子芯片。 包括光子器件的有源硅层位于硅光子芯片的前侧。 包括蚀刻的背面腔的硅衬底位于硅光子芯片的背面。 将微透镜集成到蚀刻的背面腔中。 掩埋氧化物层位于有源硅层和硅衬底之间。 掩埋氧化物层是用于蚀刻的背面腔的蚀刻停止。
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公开(公告)号：US20110127438A1
公开(公告)日：2011-06-02
申请号：US12627076
申请日：2009-11-30
申请人： Cyril Cabral, JR. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
发明人： Cyril Cabral, JR. , Michael S. Gordon , Steven J. Koester , Conal E. Murray , Kenneth P. Rodbell , Stephen M. Rossnagel , Robert L. Wisnieff , Jeng-bang Yau
CPC分类号： G01T1/026
摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.
摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。
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公开(公告)号：US20090181534A1
公开(公告)日：2009-07-16
申请号：US12013799
申请日：2008-01-14
IPC分类号： H01L21/4763 , B05C11/00
CPC分类号： H01L21/76825 , B29C71/04 , B29C2035/0877 , H01J37/026 , H01J37/317 , H01J2237/0044 , H01J2237/024 , H01J2237/047 , H01J2237/3156 , H01L21/3105 , H01L21/76835
摘要： An ultra low-k dielectric material layer is formed on a semiconductor substrate. In one embodiment, a grid of wires is placed at a distance above a top surface of the ultra low-k dielectric material layer and is electrically biased such that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. In another embodiment, a polymeric conductive layer is formed directly on the ultra low-k dielectric material layer and is electrically biased so that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. By maintaining the total electron emission coefficient at 1.0, charging of the substrate is avoided, thus protecting any device on the substrate from any adverse changes in electrical characteristics.
摘要翻译： 在半导体基板上形成超低k电介质材料层。 在一个实施例中，电线格栅放置在超低k电介质材料层的顶表面上方的距离处，并被电偏置，使得在电子束固化中使用的电子的能量下，总电子发射系数为1.0 超低k电介质材料层。 在另一个实施例中，聚合物导电层直接形成在超低k电介质材料层上并被电偏置，使得在超低k电介质的电子束固化中使用的电子能量下，总电子发射系数变为1.0 材料层。 通过将总电子发射系数保持在1.0，避免了衬底的充电，从而保护衬底上的任何器件免受电特性的任何不利变化。
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37.发明申请RADIATION DETECTION SCHEMES, APPARATUS AND METHODS OF TRANSMITTING RADIATION DETECTION INFORMATION TO A NETWORK 审中-公开辐射检测方案，向网络发射辐射检测信息的装置和方法公开(公告)号：US20090108212A1
公开(公告)日：2009-04-30
申请号：US12326198
申请日：2008-12-02
IPC分类号： G01T1/00
CPC分类号： G01T1/04
摘要： Personal radiation detection devices, methods of obtaining radiation exposure data, and networks of personal radiation devices. The detection devices may include passive devices and active devices. The passive detection devices may have the same form factor as credit cards or be included in common types of credit card form factor sized cards.
摘要翻译： 个人辐射检测装置，获得辐射照射数据的方法和个人辐射装置的网络。 检测设备可以包括无源设备和有源设备。 被动检测设备可以具有与信用卡相同的形式，或者被包括在常规类型的信用卡形状因子大小的卡中。
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38.发明授权Method of detecting and transmitting radiation detection information to a network 失效检测和发射辐射检测信息到网络的方法公开(公告)号：US07491948B2
公开(公告)日：2009-02-17
申请号：US11342429
申请日：2006-01-30
IPC分类号： G01T3/00
CPC分类号： G01T1/04
摘要： A method of detecting and transmitting radiation detection information to a network. The method including: communicating with one or more personal radiation detection devices, each device including, a host memory, an event memory, a microprocessor, a global positioning unit and a transceiver or a transmitter; a radiation shield around the host memory and the event memory; a radiation detection memory, the radiation detection memory, responsive to alpha radiation and including two or more SRAM arrays including cross-coupled invertors coupled to wordlines through different value capacitors; a conversion device including a material able to convert neutron and/or gamma radiation into alpha radiation; and an event detection circuit configured to detect and to store data relative to detection of the alpha radiation events by the radiation detection memory; storing the data in the event memory; and retrieving, in a reading device of the network, the data stored in the event memory.
摘要翻译： 一种检测和发射辐射检测信息到网络的方法。 该方法包括：与一个或多个个人辐射检测设备通信，每个设备包括主机存储器，事件存储器，微处理器，全球定位单元和收发器或发射器; 围绕主机存储器和事件存储器的辐射屏蔽; 辐射检测存储器，所述辐射检测存储器响应于α辐射并且包括两个或更多个SRAM阵列，包括通过不同值电容器耦合到字线的交叉耦合的反相器; 转换装置，其包括能够将中子和/或γ辐射转换为α辐射的材料; 以及事件检测电路，被配置为检测并存储相对于所述辐射检测存储器对所述α辐射事件的检测的数据; 将数据存储在事件存储器中; 以及在所述网络的读取设备中检索存储在所述事件存储器中的数据。
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公开(公告)号：US06879098B2
公开(公告)日：2005-04-12
申请号：US10756037
申请日：2004-01-13
IPC分类号： G02F1/1362 , H01L27/32 , H01J1/62
CPC分类号： G02F1/1362 , H01L27/32 , H01L27/3255 , Y10T29/4913 , Y10T29/4981 , Y10T29/49895
摘要： A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.
摘要翻译： 一种显示装置的制造方法，在显示基板上形成导电层，并在显示基板上形成像素电极。 采用板将单独制造的有源器件携带到显示器基板。 单独制造的器件连接到导电层和像素电极。
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40.发明授权Thin film transistor and multilayer film structure and manufacturing method of same 失效薄膜晶体管和多层膜结构及其制造方法相同公开(公告)号：US06791144B1
公开(公告)日：2004-09-14
申请号：US09604430
申请日：2000-06-27
IPC分类号： H01L2701
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1292 , H01L29/41733 , H01L29/66757 , H01L29/78609 , H01L29/78633 , H01L29/78666
摘要： The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes 14 and 15 disposed at a specified interval above an insulating substrate 11 and formed by printing-and-plating; an a-Si-film 16 disposed for the source and drain electrodes 14 and 15; a gate insulating film 17 laminated on the a-Si film 16; and a gate electrode 18 laminated on the gate insulating film 17 and formed by printing-and-plating. The a-Si film 16 and the gate insulating film 17 have an offset region 20 that uniformly extends beyond the dimensions of the gate electrode 18.
摘要翻译： 本发明涉及一种薄膜晶体管（及相关的多层结构），其包括：以绝缘基板11上方的特定间隔设置并通过印刷和电镀形成的源极和漏极14和15; 为源极和漏极14和15设置的a-Si膜16; 层叠在a-Si膜16上的栅极绝缘膜17; 以及层叠在栅极绝缘膜17上并通过印刷和电镀形成的栅电极18。 a-Si膜16和栅极绝缘膜17具有均匀地延伸超过栅电极18的尺寸的偏移区域20。
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