公开(公告)号：US20090305495A1

公开(公告)日：2009-12-10

申请号：US12465013

申请日：2009-05-13

申请人： Young-Ho Lee ,  Jae-Hwang Sim ,  Jae-Kwan Park ,  Mo-Seok Kim ,  Jong-Min Lee ,  Dong-Sik Lee

发明人： Young-Ho Lee ,  Jae-Hwang Sim ,  Jae-Kwan Park ,  Mo-Seok Kim ,  Jong-Min Lee ,  Dong-Sik Lee

IPC分类号： H01L21/768

CPC分类号： H01L21/76816 ,  H01L21/31144

摘要： A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the interconnections to selectively expose the plugs. The interconnections may include a connection portion which is in contact with plugs selectively exposed by the protection pattern. A method of manufacturing a semiconductor device includes, after forming a molding pattern and a mask pattern, selectively etching a protection layer using the mask pattern to form a protection pattern exposing a plug.

摘要翻译： 半导体器件可以包括以锯齿形图案布置的插塞，电连接到插头的互连和插入在插头和互连之间的保护图案以选择性地暴露插头。 互连可以包括与由保护图案选择性地暴露的插头接触的连接部分。 制造半导体器件的方法包括：在形成模制图案和掩模图案之后，使用掩模图案选择性地蚀刻保护层以形成露出插头的保护图案。

公开(公告)号：US07471709B2

公开(公告)日：2008-12-30

申请号：US11390253

申请日：2006-03-28

申请人： Jong-Min Lee

发明人： Jong-Min Lee

IPC分类号： H01S3/00

CPC分类号： H01S5/0683 ,  H04N1/40037

摘要： An apparatus and method of controlling emission of a laser beam in an image forming apparatus. The method includes generating a first reference voltage and a second reference voltage corresponding to a normal mode and a toner save mode, supplying one of the first reference voltage and the second reference voltage corresponding to a mode selection signal in a switching manner, generating a first control voltage and second control voltage to control emission of the laser beam, and supplying a drive current corresponding to one of the generated first and second control voltages to a laser diode to control intensity of the laser beam according to the selection mode.

摘要翻译： 一种在图像形成装置中控制激光束的发射的装置和方法。 该方法包括产生对应于正常模式和调色剂节省模式的第一参考电压和第二参考电压，以切换方式提供对应于模式选择信号的第一参考电压和第二参考电压之一，产生第一参考电压 控制电压和第二控制电压以控制激光束的发射，并将与生成的第一和第二控制电压中的一个相对应的驱动电流提供给激光二极管，以根据选择模式控制激光束的强度。

公开(公告)号：US07407854B2

公开(公告)日：2008-08-05

申请号：US10749775

申请日：2003-12-30

申请人： Dong-Woo Shin ,  Hyung-Bok Choi ,  Jong-Min Lee ,  Jin-Woong Kim

发明人： Dong-Woo Shin ,  Hyung-Bok Choi ,  Jong-Min Lee ,  Jin-Woong Kim

IPC分类号： H01L21/8242

CPC分类号： H01L28/84 ,  H01L21/32155 ,  H01L28/91

摘要： The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.

摘要翻译： 本发明涉及半导体器件的电容器的制造方法。 该方法包括以下步骤：在预定的第一掺杂浓度抑制掺杂剂中形成掺杂有杂质的第一非晶硅层局部凝聚; 在原位条件下在第一非晶硅层上形成杂质未掺杂的第二非晶硅层; 通过图案化所述第一非晶硅层和所述第二非晶硅层来形成存储节点; 在所述存储节点的表面上形成硅晶粒; 以及将杂质掺杂到存储节点和硅晶粒直到达到第二预定浓度以提供存储节点所需的导电性。

公开(公告)号：US20080076231A1

公开(公告)日：2008-03-27

申请号：US11952767

申请日：2007-12-07

申请人： Dong-Woo SHIN ,  Hyung-Bok Choi ,  Jong-Min Lee ,  Jin-Woong Kim

发明人： Dong-Woo SHIN ,  Hyung-Bok Choi ,  Jong-Min Lee ,  Jin-Woong Kim

IPC分类号： H01L21/22

CPC分类号： H01L28/84 ,  H01L21/32155 ,  H01L28/91

摘要： The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.

摘要翻译： 本发明涉及半导体器件的电容器的制造方法。 该方法包括以下步骤：在预定的第一掺杂浓度抑制掺杂剂中形成掺杂有杂质的第一非晶硅层局部凝聚; 在原位条件下在第一非晶硅层上形成杂质未掺杂的第二非晶硅层; 通过图案化所述第一非晶硅层和所述第二非晶硅层来形成存储节点; 在所述存储节点的表面上形成硅晶粒; 以及将杂质掺杂到存储节点和硅晶粒直到达到第二预定浓度以提供存储节点所需的导电性。

公开(公告)号：US20060240873A1

公开(公告)日：2006-10-26

申请号：US11174818

申请日：2005-07-05

申请人： Jeong-Min You ,  Jong-Min Lee ,  Youn-Hee Cho

发明人： Jeong-Min You ,  Jong-Min Lee ,  Youn-Hee Cho

IPC分类号： H04B1/38 ,  H04M1/00

CPC分类号： H04M1/0241 ,  H04M1/0216 ,  H04M1/0233 ,  H04M1/0247 ,  H04N7/142 ,  H04N7/147 ,  H04N2007/145

摘要： Disclosed is an apparatus and a method for displaying images or videos in a telecommunication terminal having a rotatable display. When the display has been rotated, images or videos are displayed as they are and, when the display has not been rotated, target regions are chosen from the images or videos based on the screen size and are displayed.

摘要翻译： 公开了一种用于在具有可旋转显示器的电信终端中显示图像或视频的装置和方法。 当显示器被旋转时，图像或视频被原样显示，并且当显示器未被旋转时，基于屏幕尺寸从图像或视频中选择目标区域并且被显示。

公开(公告)号：US5633884A

公开(公告)日：1997-05-27

申请号：US396642

申请日：1995-03-01

申请人： Jong-Min Lee ,  Byung-Heon Cha ,  Sung-Ho Kim ,  Do-Kyeong Ko

发明人： Jong-Min Lee ,  Byung-Heon Cha ,  Sung-Ho Kim ,  Do-Kyeong Ko

IPC分类号： H01S3/082 ,  H01S3/10 ,  H01S3/1055

CPC分类号： H01S3/0826 ,  H01S3/1055

摘要： Self-seeding method and apparatus for a dual cavity type tunable laser utilizing a diffraction grating are disclosed, in which first diffracted beams and 0th diffracted beams are utilized. The self-seeding method and apparatus for a dual cavity type tunable laser are constituted such that two oscillators are internally provided by utilizing a diffraction grating and by making a single medium shared, so that the respective oscillators would serve as a master oscillator and a slave oscillator, thereby making it possible to save optical devices. Further, in the present invention, only one partially reflecting mirror is disposed on the output portion of a GIM (grazing incidence with tuning mirror) type oscillator, so that a self-seeding would occur, and that the laser output would be greatly amplified with the oscillation linewidth maintained without variations.

摘要翻译： 公开了利用衍射光栅的双腔型可调激光器的自播方法和装置，其中使用了第一衍射光束和第0衍射光束。 用于双腔型可调激光器的自种子方法和装置被构造成使得通过利用衍射光栅内部提供两个振荡器并且通过使单个介质共享，使得各个振荡器将用作主振荡器和从机 振荡器，从而可以节省光学装置。 此外，在本发明中，只有一个部分反射镜设置在GIM的输出部分（具有调谐反射镜的掠入射）型振荡器中，从而将发生自播，并且激光输出将被大大放大， 振荡线宽保持不变。

公开(公告)号：US09330913B2

公开(公告)日：2016-05-03

申请号：US12912744

申请日：2010-10-27

申请人： Jang-Hyun You ,  Jong-Min Lee ,  Dong-Hwa Kwak ,  Tae-Yong Kim ,  Jong-Hoon Na ,  Young-Woo Park ,  Dong-Sik Lee ,  Jee-Hoon Han

发明人： Jang-Hyun You ,  Jong-Min Lee ,  Dong-Hwa Kwak ,  Tae-Yong Kim ,  Jong-Hoon Na ,  Young-Woo Park ,  Dong-Sik Lee ,  Jee-Hoon Han

IPC分类号： H01L29/40 ,  H01L21/033 ,  H01L21/28 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/762 ,  H01L27/115 ,  H01L29/66

CPC分类号： H01L21/0337 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76229 ,  H01L27/11521 ,  H01L27/11536 ,  H01L29/66825

摘要： A semiconductor device includes first, second, and third conductive lines, each with a respective line portion formed over a substrate and extending in a first direction and with a respective branch portion extending from an end of the respective line portion in a direction different from the first direction. The branch portion of a middle conductive line is disposed between and shorter than the respective branch portions of the outer conductive lines such that contact pads may be formed integral with such branch portions of the conductive lines.

摘要翻译： 半导体器件包括第一，第二和第三导线，每个导线具有形成在衬底上并且沿第一方向延伸的相应的线部分，并且具有相应的分支部分，该分支部分从相应线部分的端部沿与 第一个方向 中间导线的分支部分设置在外导电线的相应分支部分之间并且短于接触焊盘可以与导电线的这种分支部分一体形成。

公开(公告)号：US08357605B2

公开(公告)日：2013-01-22

申请号：US13190032

申请日：2011-07-25

申请人： Jong-Min Lee ,  Jae-Kwan Park ,  Jee-Hoon Han

发明人： Jong-Min Lee ,  Jae-Kwan Park ,  Jee-Hoon Han

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28273 ,  H01L21/28282 ,  H01L21/7682 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/42324 ,  H01L29/4234

摘要： Methods of forming memory devices are provided. The methods may include forming a pre-stacked gate structure including a lower structure and a first polysilicon pattern on the substrate. The methods may also include forming an insulation layer covering the pre-stacked gate structure. The methods may further include forming a trench in the insulation layer by removing a portion of the first polysilicon pattern. The methods may additionally include forming a metal film pattern in the trench on the first polysilicon pattern. The methods may also include forming a first metal silicide pattern by performing a first thermal treatment on the first polysilicon pattern and the metal film pattern. The methods may further include forming a second polysilicon pattern in the trench. The methods may additionally include forming a second metal silicide pattern by performing a second thermal treatment on the second polysilicon pattern and the first metal silicide pattern.

摘要翻译： 提供了形成存储器件的方法。 所述方法可以包括在衬底上形成包括下部结构和第一多晶硅图案的预堆叠栅极结构。 所述方法还可以包括形成覆盖预堆叠栅极结构的绝缘层。 所述方法还可以包括通过去除第一多晶硅图案的一部分在绝缘层中形成沟槽。 所述方法还可以包括在第一多晶硅图案上的沟槽中形成金属膜图案。 所述方法还可以包括通过对第一多晶硅图案和金属膜图案进行第一热处理来形成第一金属硅化物图案。 所述方法还可以包括在沟槽中形成第二多晶硅图案。 所述方法还可以包括通过对第二多晶硅图案和第一金属硅化物图案进行第二热处理来形成第二金属硅化物图案。

公开(公告)号：US20120225334A1

公开(公告)日：2012-09-06

申请号：US13315273

申请日：2011-12-08

申请人： Jong-Min Lee

发明人： Jong-Min Lee

IPC分类号： H01M10/50

CPC分类号： H01M2/347 ,  H01M2/0217 ,  H01M2/348 ,  H01M6/42 ,  H01M10/0436 ,  H01M10/425 ,  H01M10/4257 ,  H01M10/482 ,  H01M10/486 ,  H01M2010/4278 ,  H01M2200/105 ,  H01M2200/106 ,  H01M2200/108

摘要： A battery pack includes: a bare cell; a protection circuit module electrically connected to the bare cell; a thermistor configured to sense a temperature of the bare cell and electrically coupled to the protection circuit module, the thermistor having a lead, the lead having a lead end portion adjacent to the protection circuit module, the lead end portion having a first side facing the protection circuit module; and a support between the first side of the lead end portion and the protection circuit module.

摘要翻译： 电池组包括：裸电池; 电连接到所述裸电池的保护电路模块; 热敏电阻，其被配置为感测所述裸电池的温度并电耦合到所述保护电路模块，所述热敏电阻具有引线，所述引线具有与所述保护电路模块相邻的引线端部，所述引线端部具有面向所述保护电路模块的第一侧; 保护电路模块; 以及在前端部分的第一侧和保护电路模块之间的支撑。

公开(公告)号：US20120009425A1

公开(公告)日：2012-01-12

申请号：US13031588

申请日：2011-02-21

申请人： Jong-Min Lee ,  Dae-Wook Kim ,  Young-Doo Jun ,  Seong-Guen Oh ,  Christopher Paradies

发明人： Jong-Min Lee ,  Dae-Wook Kim ,  Young-Doo Jun ,  Seong-Guen Oh ,  Christopher Paradies

IPC分类号： B32B5/16 ,  A01N59/16 ,  C08F8/42 ,  C01B33/00 ,  A01P1/00 ,  A01N25/26 ,  C08F112/08 ,  B82Y30/00

CPC分类号： B82Y30/00 ,  A01N59/16 ,  C07B2200/11 ,  C08J3/2053 ,  C08K3/36 ,  C08K5/548 ,  C08L39/06 ,  Y10T428/2993 ,  Y10T428/2998 ,  A01N25/04 ,  A01N25/08 ,  A01N25/12 ,  A01N25/34 ,  A01N2300/00

摘要： Size-controlled immobilization of metal nano-clusters onto particles or nanoparticles is achieved using a polyol process. Polyol processing makes it possible to use thiol groups as a chemical protocol to functionalize the surface of particles, such as silica and polystyrene nanoparticles. Metal nano-clusters, such as silver, gold, platinum and palladium, nucleate and grow on the surface of the particles. The metal nano-clusters may be synthesized in a one-pot process from metal salts, nitrates, nitrites, sulfates, sulfites and the like. Any source of metal ions compatible with the polyol suspension and selected particles may be used. The size of immobilized metal nano-clusters may be controlled by additions of a poly(vinylpyrrolidone) or other polymer capable of regulating the metal ion reduction and nucleation process and by controlling concentration of metal ions, the nucleation and/or growth temperatures, and processing time.

摘要翻译： 使用多元醇工艺可以将金属纳米簇的尺寸控制固定在颗粒或纳米颗粒上。 多元醇加工使得可以使用硫醇基团作为化学方案来官能化颗粒表面，如二氧化硅和聚苯乙烯纳米颗粒。 金属纳米簇，例如银，金，铂和钯，在颗粒表面成核并生长。 金属纳米簇可以在一锅法中由金属盐，硝酸盐，亚硝酸盐，硫酸盐，亚硫酸盐等合成。 可以使用与多元醇悬浮液和选定颗粒相容的任何金属离子源。 固定金属纳米簇的大小可以通过加入聚（乙烯基吡咯烷酮）或其它能够调节金属离子还原和成核过程并通过控制金属离子浓度，成核和/或生长温度以及加工的聚合物来控制 时间。