公开(公告)号：US08237517B2

公开(公告)日：2012-08-07

申请号：US13205933

申请日：2011-08-09

Applicant: Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

Inventor： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

IPC: H03H7/38

CPC classification number: H03H7/38

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

公开(公告)号：US08076247B2

公开(公告)日：2011-12-13

申请号：US11733770

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

Abstract translation: 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

公开(公告)号：US20110263050A1

公开(公告)日：2011-10-27

申请号：US13177442

申请日：2011-07-06

Applicant: James P. Cruse ,  Theresa Kramer Guarini ,  Jeffrey Charles Pierce

Inventor： James P. Cruse ,  Theresa Kramer Guarini ,  Jeffrey Charles Pierce

IPC: H01L21/66

CPC classification number: H01L21/67069 ,  H01L21/67253 ,  H01L22/20

Abstract: Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system.

Abstract translation: 本发明的方面包括在基板处理系统中控制等离子体的方法。 一个实施例提供了在处理第一组一个或多个基板之前控制在腔室内从等离子体反射的反射电磁辐射的第一组波长强度，将第一组反射电磁辐射的波长强度与处理中的RF功率相关联 系统，基于反射电磁辐射的第一组波长强度调整匹配电路，处理衬底处理系统中的第一组一个或多个衬底，控制从等离子体反射的反射电磁辐射的第二组波长强度 并且将反射的电磁辐射的第二组波长强度与处理系统内的RF功率相关联。

公开(公告)号：US07955646B2

公开(公告)日：2011-06-07

申请号：US10914964

申请日：2004-08-09

Applicant: James P. Cruse ,  Andreas G. Hegedus ,  Satheesh Kuppurao

Inventor： James P. Cruse ,  Andreas G. Hegedus ,  Satheesh Kuppurao

IPC: C23C16/00

CPC classification number: C23C16/455 ,  C23C8/10 ,  C23C8/36 ,  C23C16/24 ,  C23C16/45557 ,  C30B25/14 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28525 ,  H01L21/3115 ,  H01L21/3144

Abstract: The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.

Abstract translation: 扩散到基板中的原子的量可以在低物质利用过程中通过在低物质利用过程中停止气体流入反应室而在低物质利用过程中使薄膜的厚度均匀。 停止进入反应室的气体流可能需要关闭闸阀（真空泵的阀），稳定反应室内的压力，并在停止流入室内的气体的同时保持稳定的压力。 低物种利用过程包括通过解耦等离子体氮化（DPN）将氮扩散到二氧化硅栅极电介质层中，通过快速热处理（RTP）或化学气相沉积（CVD）沉积二氧化硅膜，以及沉积硅 外延层通过CVD。

公开(公告)号：US20100096109A1

公开(公告)日：2010-04-22

申请号：US12253657

申请日：2008-10-17

Applicant: CHUNLEI ZHANG ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

Inventor： CHUNLEI ZHANG ,  Richard Fovell ,  Ezra Robert Gold ,  Ajit Balakrishna ,  James P. Cruse

IPC: F28D15/00 ,  B01J19/08

CPC classification number: H05B7/18 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069

Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

Abstract translation: 本文提供了用于调节等离子体增强处理室中的组分的温度的方法和装置。 在一些实施例中，用于处理衬底的装置包括处理室和RF源，以提供RF能量以在处理室中形成等离子体。 一个部件设置在处理室中，以便在形成时被等离子体加热。 加热器被配置为加热部件并且热交换器被配置成从部件移除热量。 冷却器通过具有设置在其中的开/关流量控制阀的第一流动管道和旁路循环来耦合到热交换器，旁路回路绕过流量控制阀，其中旁路回路具有设置在其中的流量比阀。

公开(公告)号：US07645709B2

公开(公告)日：2010-01-12

申请号：US11830140

申请日：2007-07-30

Applicant: Thai Cheng Chua ,  James P. Cruse ,  Cory Czarnik

Inventor： Thai Cheng Chua ,  James P. Cruse ,  Cory Czarnik

IPC: H01L21/469

CPC classification number: H01L29/7881 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/66825

Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H2) and oxygen (O2)—provided at a flow rate ratio of hydrogen (H2) to oxygen (O2) of up to about 3:1—or water vapor (H2O vapor); and generating an inductively coupled plasma in the ion generation region of the chamber to form a silicon oxide layer on the substrate.

Abstract translation: 本文提供了在半导体衬底上制造氧化物层的方法。 在一些实施例中，在半导体衬底上形成氧化物层的方法包括将待氧化的衬底放置在等离子体反应器的真空室中的衬底支撑件上，该腔室具有远离衬底支撑件的离子产生区域; 将工艺气体引入所述室中，所述工艺气体包括氢（H 2）和氧（O 2）中的至少一种，以氢（H 2）与氧（O 2）的流速比高达约3：1- 或水汽（H 2 O蒸气）; 以及在所述室的离子产生区域中产生电感耦合等离子体，以在所述衬底上形成氧化硅层。

公开(公告)号：US07605008B2

公开(公告)日：2009-10-20

申请号：US11695553

申请日：2007-04-02

Applicant: Thai Cheng Chua ,  James P. Cruse ,  Cory Czarnik

Inventor： Thai Cheng Chua ,  James P. Cruse ,  Cory Czarnik

IPC: H01L21/318 ,  H01L21/66

CPC classification number: H01J37/32697 ,  H01J37/321 ,  H01J37/32623

Abstract: A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.

Abstract translation: 提供了一种使用电容耦合技术将气体混合物点燃到等离子体中的方法和装置，其将等离子体和其他内容物等离子体与电容耦合电场屏蔽，并使用电感耦合来维持等离子体。 对于一些实施例，可以在点燃等离子体之后控制电容耦合的量。 这样的技术被用于防止由电容耦合等离子体的电场对由高能量的离子和电子加速而朝向和垂直于衬底表面加速的过度的离子轰击造成的衬底表面的损坏。

公开(公告)号：US20080241419A1

公开(公告)日：2008-10-02

申请号：US11695553

申请日：2007-04-02

Applicant: THAI CHENG CHUA ,  James P. Cruse ,  Cory Czarnik

Inventor： THAI CHENG CHUA ,  James P. Cruse ,  Cory Czarnik

IPC: H05H1/24

CPC classification number: H01J37/32697 ,  H01J37/321 ,  H01J37/32623

Abstract: A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.

Abstract translation: 提供了一种使用电容耦合技术将气体混合物点燃到等离子体中的方法和装置，其将等离子体和其他内容物等离子体与电容耦合电场屏蔽，并使用电感耦合来维持等离子体。 对于一些实施例，可以在点燃等离子体之后控制电容耦合的量。 这样的技术被用于防止由电容耦合等离子体的电场对由高能量的离子和电子加速而朝向和垂直于衬底表面加速的过度的离子轰击造成的衬底表面的损坏。

公开(公告)号：US20080179011A1

公开(公告)日：2008-07-31

申请号：US11734040

申请日：2007-04-11

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: C23F1/00 ,  C23C16/00

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.

Abstract translation: 等离子体反应器包括用于支撑工件的室中的静电卡盘，面向静电卡盘的天花板电极和静电卡盘中的ESC电极，其具有耦合到ESC电极的静电钳位电压源。 反应器还包括耦合到基座电极的LF或HF频率的至少第一RF偏置源，以及耦合到相同或不同电极的不同频率的第一和第二VHF电源。 第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。

公开(公告)号：US06660659B1

公开(公告)日：2003-12-09

申请号：US10170925

申请日：2002-06-12

Applicant: Philip Allan Kraus ,  Thai Cheng Chua ,  John Holland ,  James P. Cruse

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  John Holland ,  James P. Cruse

IPC: H01L2131

CPC classification number: H01L21/0234 ,  H01J37/321 ,  H01L21/02332 ,  H01L21/3144 ,  H01L21/3185

Abstract: According to one aspect of the invention, a method is provided of processing a substrate, including locating the substrate in a processing chamber, creating a nitrogen plasma in the chamber, the plasma having an ion density of at least 1010 cm−3, and a potential of less than 20 V, and exposing a layer on the substrate to the plasma to incorporate nitrogen of the plasma into the layer.

Abstract translation: 根据本发明的一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，在腔室中产生氮等离子体，等离子体具有至少10cm -1的离子密度， 3>，并且电位低于20V，并将衬底上的层暴露于等离子体以将等离子体的氮引入层中。