-
公开(公告)号：US10854797B2
公开(公告)日：2020-12-01
申请号：US16421716
申请日：2019-05-24
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
-
32.发明授权公开(公告)号：US11555256B2
公开(公告)日：2023-01-17
申请号：US16444147
申请日：2019-06-18
申请人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号： C30B29/40 , H01L33/32 , C30B23/06 , C30B33/02 , C01B21/072
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
-
公开(公告)号：US11355664B2
公开(公告)日：2022-06-07
申请号：US16929634
申请日：2020-07-15
申请人： James R. Grandusky , Leo J. Schowalter , Craig Moe
发明人： James R. Grandusky , Leo J. Schowalter , Craig Moe
摘要： In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
-
公开(公告)号：US10971665B2
公开(公告)日：2021-04-06
申请号：US16801358
申请日：2020-02-26
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
-
公开(公告)号：US10347805B2
公开(公告)日：2019-07-09
申请号：US15898347
申请日：2018-02-16
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
-
公开(公告)号：US20180190883A1
公开(公告)日：2018-07-05
申请号：US15898347
申请日：2018-02-16
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
CPC分类号： H01L33/56 , H01L33/54 , H01L33/58 , H01L2933/005 , H01L2933/0058
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
-
公开(公告)号：US11168411B2
公开(公告)日：2021-11-09
申请号：US16444148
申请日：2019-06-18
申请人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号： C30B33/02 , C30B29/40 , H01L33/32 , C30B23/06 , C01B21/072
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
-
公开(公告)号：US10756234B2
公开(公告)日：2020-08-25
申请号：US15977031
申请日：2018-05-11
申请人： James R. Grandusky , Leo J. Schowalter , Craig Moe
发明人： James R. Grandusky , Leo J. Schowalter , Craig Moe
摘要： In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
-
公开(公告)号：US10074784B2
公开(公告)日：2018-09-11
申请号：US14596806
申请日：2015-01-14
CPC分类号： H01L33/58 , H01L33/22 , H01L33/405 , H01L33/54 , H01L33/56 , H01L2933/0058
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
-
公开(公告)号：US20160181487A1
公开(公告)日：2016-06-23
申请号：US14596806
申请日：2015-01-14
CPC分类号： H01L33/58 , H01L33/22 , H01L33/405 , H01L33/54 , H01L33/56 , H01L2933/0058
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
摘要翻译： 在各种实施例中，刚性透镜通过具有不足以防止刚性透镜和半导体裸片之间的热膨胀失配诱导应变传播的厚度的密封剂层附着到发光半导体管芯。
-
-
-
-
-
-
-
-
-
搜索结果
96 条记录 (耗时 0.038 秒)
