摘要:
In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
摘要:
In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
摘要:
In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant. A barrier layer is disposed between the light-emitting device and the encapsulant and is configured to substantially prevent UV light emitted by the light-emitting device from entering the encapsulant.
摘要:
A Ni-based alloy including chromium, cobalt, aluminum, titanium, tantalum, tungsten, molybdenum, niobium, carbon, and boron, the balance being nickel and incidental impurities, is provided. The alloy has an alloy composition of, on the basis of mass percent, chromium: 13.10% to 16.00%, cobalt: 8.00% to 12.50%, aluminum: 2.30% to 3.50%, titanium: 4.80% to 5.50%, tantalum: 0.40% to less than 1.00%, tungsten: 4.50% to 6.00%, molybdenum: 0.10% to 1.50%, niobium: 0.60% to 1.70%, carbon: 0.01% to 0.20%, boron: 0.005% to 0.02%, and the balance: nickel and incidental impurities.
摘要:
A Ni-based alloy including chromium, cobalt, aluminum, titanium, tantalum, tungsten, molybdenum, niobium, carbon, and boron, the balance being nickel and incidental impurities, is provided. The alloy has an alloy composition of, on the basis of mass percent, chromium: 13.10% to 16.00%, cobalt: 8.00% to 12.50%, aluminum: 2.30% to 3.50%, titanium: 4.80% to 5.50%, tantalum: 0.40% to less than 1.00%, tungsten: 4.50% to 6.00%, molybdenum: 0.10% to 1.50%, niobium: 0.60% to 1.70%, carbon: 0.01% to 0.20%, boron: 0.005% to 0.02%, and the balance: nickel and incidental impurities.
摘要:
This invention provides an Ni-based alloy, which is particularly used for standard casting and is provided with properties such as strength at high temperatures, corrosion resistivity, and oxidation resistivity in a more balanced manner, compared with existing materials. The Ni-based alloy comprises Cr, Co, Al, Ti, Ta, W, Mo, Nb, C, B, and unavoidable impurities, with the balance consisting of Ni. Composition of the alloy is represented by mass: 13.1% to 15.0% Cr, 1.0% to 15.0% Co, 2.3% to 3.3% Al, 4.55% to 6.0% Ti, 3.05% to 4.0% Ta, 4.35% to 4.9% W, 0.1% to 2.0% Mo, 0.05% to 0.5% Nb, less than 0.05% Zr, 0.05% to 0.2% C, and 0.01% to 0.03% B.
摘要:
In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
摘要:
In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
摘要:
In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
摘要:
In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.