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    PERM ROD
    33.
    发明申请
    PERM ROD 审中-公开

    公开(公告)号：US20090084397A1

    公开(公告)日：2009-04-02

    申请号：US11862655

    申请日：2007-09-27

    申请人： Young Ho Park

    发明人： Young Ho Park

    IPC分类号： A45D2/10 ,  A45D2/14 ,  A45D2/16

    CPC分类号： A45D2/12 ,  A45D2/125 ,  A45D2/127 ,  A45D2/145 ,  A45D2/148

    摘要： Disclosed herein is a perm rod. The perm rod includes a body, a sheet of permanent wave paper, and a rubber band. The body is made of an aluminum material, has a hollow cylindrical shape, and is configured such that hair is rolled around the body, a plurality of slots is formed in the outer surface of the body, and caps, having coupling protrusions, are fitted into the respective ends of the body. The sheet of permanent wave paper is rolled around the body in the state in which an appropriate number of hairs is placed on the sheet of permanent wave paper. The rubber band has coupling holes, which are formed in the respective ends thereof, and is detachably coupled to the coupling protrusions.

    摘要翻译： 这里公开了一种烫发棒。 烫发杆包括一个主体，一张永久波纸和一个橡皮筋。 本体由铝材制成，具有中空圆筒形状，并且构造成使得头发卷绕在本体上，在本体的外表面上形成有多个狭槽，并且具有联接突起的帽被安装 进入身体的两端。 在永久性纸张上放置适当数量的毛发的状态下，将永久性纸张卷绕在身体周围。 橡胶带具有形成在其相应端部的联接孔，并且可拆卸地联接到联接突起。

    Method of manufacturing gallium nitride-based single crystal substrate
    34.
    发明授权
    Method of manufacturing gallium nitride-based single crystal substrate 失效
    制造氮化镓基单晶衬底的方法

    公开(公告)号：US07468103B2

    公开(公告)日：2008-12-23

    申请号：US10837709

    申请日：2004-05-04

    申请人： Soo Min Lee ,  Hun Joo Hahm ,  Young Ho Park

    发明人： Soo Min Lee ,  Hun Joo Hahm ,  Young Ho Park

    IPC分类号： C30B25/18

    CPC分类号： C30B29/40 ,  C30B25/02 ,  C30B25/20 ,  Y10S117/915

    摘要： Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1−x−y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily growing a gallium nitride-based single crystal layer, and secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based single crystal layer while removing the ZnO substrate by etching the underside of the ZnO substrate.

    摘要翻译： 本文公开了一种制造氮化镓基（Al x In y Ga（1-xy）N）的方法，其中0 <= x <=1,0,0≤y≤1,0<= x + y <= 1）单晶 基质。 该方法包括以下步骤：制备ZnO衬底，主要生长氮化镓基单晶层，然后在主要生长的氮化镓基单晶层上再次生长附加的氮化镓基单晶层，同时去除ZnO衬底 通过蚀刻ZnO衬底的下侧。

    Vertical GaN light emitting diode and method for manufacturing the same
    35.
    发明授权
    Vertical GaN light emitting diode and method for manufacturing the same 有权
    垂直GaN发光二极管及其制造方法

    公开(公告)号：US07268372B2

    公开(公告)日：2007-09-11

    申请号：US10601597

    申请日：2003-06-24

    申请人： Young Ho Park ,  Hun Joo Hahm ,  J ong Seok Na ,  Seung Jin Yoo

    发明人： Young Ho Park ,  Hun Joo Hahm ,  J ong Seok Na ,  Seung Jin Yoo

    IPC分类号： H01L29/24 ,  H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L2221/68363

    摘要： Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

    摘要翻译： 公开了一种垂直GaN发光二极管及其制造方法。 垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN覆层，形成在第一导电GaN覆层的下表面上的有源层，形成在第一导电GaN覆层 有源层的下表面，形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。 用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤，以防止对结构的GaN单晶面的损坏。

    Vertical GaN light emitting diode and method for manufacturing the same
    36.
    发明授权
    Vertical GaN light emitting diode and method for manufacturing the same 有权
    垂直GaN发光二极管及其制造方法

    公开(公告)号：US07112456B2

    公开(公告)日：2006-09-26

    申请号：US11115237

    申请日：2005-04-27

    申请人： Young Ho Park ,  Hun Joo Hahm ,  Jeong Seok Na ,  Seung Jin Yoo

    发明人： Young Ho Park ,  Hun Joo Hahm ,  Jeong Seok Na ,  Seung Jin Yoo

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L2221/68363

    摘要： Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

    摘要翻译： 公开了一种垂直GaN发光二极管及其制造方法。 垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN包覆层，形成在第一导电GaN包层的下表面上的有源层，形成在第一导电GaN包覆层上的第二导电GaN包覆层 有源层的下表面，形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。 用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤，以防止对结构的GaN单晶面的损坏。

    Method for manufacturing gallium nitride-based semiconductor light emitting device
    37.
    发明授权
    Method for manufacturing gallium nitride-based semiconductor light emitting device 有权
    氮化镓系半导体发光元件的制造方法

    公开(公告)号：US06893889B2

    公开(公告)日：2005-05-17

    申请号：US10735615

    申请日：2003-12-16

    申请人： Young Ho Park ,  Hun Joo Hahm ,  Soo Min Lee

    发明人： Young Ho Park ,  Hun Joo Hahm ,  Soo Min Lee

    IPC分类号： H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44 ,  H01L29/06 ,  H01L31/0336 ,  H01L31/109

    CPC分类号： H01L33/42 ,  H01L33/38

    摘要： A method of manufacturing a gallium nitride-based semiconductor light emitting device, includes sequentially forming, over a substrate, a first conductivity type clad layer, an active layer, and a second conductivity type clad layer, forming a transparent electrode over the second conductivity type clad layer, forming a photoresist film on the transparent electrode such that the transparent electrode is exposed at a predetermined region, removing respective portions of the transparent electrode, second conductivity type clad layer, and active layer corresponding to the predetermined region, thereby partially exposing the first conductivity type clad layer, removing the photoresist film, and forming first and second bonding electrodes on predetermined portions of the transparent electrode and second conductivity type clad layer, respectively.

    摘要翻译： 一种制造氮化镓基半导体发光器件的方法，包括在衬底上顺序地形成第一导电型覆盖层，有源层和第二导电型覆盖层，在第二导电类型上形成透明电极 在所述透明电极上形成光致抗蚀剂膜，使得所述透明电极在预定区域露出，除去与所述预定区域对应的所述透明电极，第二导电型覆盖层和有源层的各部分，从而部分地曝光 第一导电型覆盖层，去除光致抗蚀剂膜，以及分别在透明电极和第二导电型覆盖层的预定部分上形成第一和第二接合电极。

    Hairbrush head
    38.
    外观设计
    Hairbrush head 失效
    头发刷头

    公开(公告)号：USD467737S1

    公开(公告)日：2002-12-31

    申请号：US29157469

    申请日：2002-03-21

    申请人： Young Ho Park

    设计人： Young Ho Park

    Covering plate assembly for steel pipe piles
    39.
    发明授权
    Covering plate assembly for steel pipe piles 失效
    钢管桩覆盖板组件

    公开(公告)号：US06254314B1

    公开(公告)日：2001-07-03

    申请号：US09323903

    申请日：1999-06-02

    申请人： Young Ho Park ,  Sung Hwan Kim ,  Kyung Suk Kim ,  Sung Min Cho ,  Ki Hong Lee

    发明人： Young Ho Park ,  Sung Hwan Kim ,  Kyung Suk Kim ,  Sung Min Cho ,  Ki Hong Lee

    IPC分类号： E02D546

    CPC分类号： E02D5/28 ,  Y10T403/7098

    摘要： A covering plate assembly includes a bottom plate secured to an upper side of a cross reinforced plate that is in turn secured to the upper end of a pipe pile. A plurality of reinforcing rods are secured to the upper surface of the bottom plate and extend vertically from the bottom plate. The rods may be secured to the bottom plate by either welding or threaded engagement. The bottom plate may also be secured to the cross reinforced plate by either threaded engagement or welding.

    摘要翻译： 覆盖板组件包括固定到十字增强板的上侧的底板，所述十字增强板又固定到管桩的上端。 多个加强杆固定到底板的上表面并从底板垂直延伸。 杆可以通过焊接或螺纹接合固定到底板。 底板也可以通过螺纹接合或焊接固定到十字加强板。

    Method for coating phosphor particles, phosphor therethrough and dry electrophotographic screening process using them for a CRT
    40.
    发明授权
    Method for coating phosphor particles, phosphor therethrough and dry electrophotographic screening process using them for a CRT 失效
    用于将荧光体颗粒，荧光体穿过的方法以及使用它们用于CRT的干电子照相放映方法

    公开(公告)号：US06214501B1

    公开(公告)日：2001-04-10

    申请号：US09380367

    申请日：1999-08-31

    申请人： Young Ho Park

    发明人： Young Ho Park

    IPC分类号： C09K1102

    CPC分类号： H01J9/2276 ,  C09K11/025 ,  C09K11/08 ,  H01J9/225

    摘要： A method for coating phosphor particles with polymers improves chargeability for use of these particles in CRT screens. The method includes injecting the phosphor particles into a reactor with the use of hexane as the solvent and styrene as a monomer. The particles are agitated and kept hot in the reactor. AIBN is injected into the reactor as a first, second and third catalyst, at one hour intervals. After injecting the third catalyst, a co-catalyst dissolved in hexane is also injected into the reactor. The co-catalyst is cobalt naphthalate. The method then includes cooling, drying, shattering and filtering the particles.

    摘要翻译： 用聚合物涂覆荧光体颗粒的方法改善了在CRT屏幕中使用这些颗粒的带电性。 该方法包括使用己烷作为溶剂和苯乙烯作为单体将荧光体颗粒注入反应器。 在反应器中将颗粒搅拌并保持热。 AIBN作为第一，第二和第三催化剂以一小时的间隔注入反应器。 在注入第三催化剂之后，将溶解在己烷中的助催化剂也注入反应器中。 助催化剂是萘二甲酸钴。 该方法然后包括冷却，干燥，粉碎和过滤颗粒。