公开(公告)号：US06914262B2

公开(公告)日：2005-07-05

申请号：US10689630

申请日：2003-10-22

申请人： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

发明人： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

IPC分类号： H01L25/075 ,  H01L27/15 ,  H01L31/12 ,  H01L33/08 ,  H01L33/32 ,  H01L33/44 ,  H01L33/62

CPC分类号： H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  Y10S257/918 ,  H01L2924/00014

摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

公开(公告)号：US07091055B2

公开(公告)日：2006-08-15

申请号：US11087680

申请日：2005-03-24

申请人： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

发明人： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  Y10S257/918 ,  H01L2924/00014

摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

摘要翻译： 公开了一种白色发光二极管及其制造方法。 白色发光二极管包括具有透光性的导电性基板，其表面被划分为第一和第二区域; 第一发光单元，其包括在导电基板的第一区域处的第一覆盖层，第一有源区和第二覆盖层; 第二发光单元，包括第三覆盖层，将具有与从第一有源区域发射的光合成的波长的光发射到白光的第二有源区，以及在导电基板的第二区域处的第四覆盖层; 以及第一，第二和第三电极，连接到导电衬底的第二表面的第一电极，连接到第二覆盖层的第二电极和连接到第四覆盖层的第三电极。

公开(公告)号：US07468103B2

公开(公告)日：2008-12-23

申请号：US10837709

申请日：2004-05-04

申请人： Soo Min Lee ,  Hun Joo Hahm ,  Young Ho Park

发明人： Soo Min Lee ,  Hun Joo Hahm ,  Young Ho Park

IPC分类号： C30B25/18

CPC分类号： C30B29/40 ,  C30B25/02 ,  C30B25/20 ,  Y10S117/915

摘要： Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1−x−y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily growing a gallium nitride-based single crystal layer, and secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based single crystal layer while removing the ZnO substrate by etching the underside of the ZnO substrate.

摘要翻译： 本文公开了一种制造氮化镓基（Al x In y Ga（1-xy）N）的方法，其中0 <= x <=1,0,0≤y≤1,0<= x + y <= 1）单晶 基质。 该方法包括以下步骤：制备ZnO衬底，主要生长氮化镓基单晶层，然后在主要生长的氮化镓基单晶层上再次生长附加的氮化镓基单晶层，同时去除ZnO衬底 通过蚀刻ZnO衬底的下侧。

公开(公告)号：US06893889B2

公开(公告)日：2005-05-17

申请号：US10735615

申请日：2003-12-16

申请人： Young Ho Park ,  Hun Joo Hahm ,  Soo Min Lee

发明人： Young Ho Park ,  Hun Joo Hahm ,  Soo Min Lee

IPC分类号： H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44 ,  H01L29/06 ,  H01L31/0336 ,  H01L31/109

CPC分类号： H01L33/42 ,  H01L33/38

摘要： A method of manufacturing a gallium nitride-based semiconductor light emitting device, includes sequentially forming, over a substrate, a first conductivity type clad layer, an active layer, and a second conductivity type clad layer, forming a transparent electrode over the second conductivity type clad layer, forming a photoresist film on the transparent electrode such that the transparent electrode is exposed at a predetermined region, removing respective portions of the transparent electrode, second conductivity type clad layer, and active layer corresponding to the predetermined region, thereby partially exposing the first conductivity type clad layer, removing the photoresist film, and forming first and second bonding electrodes on predetermined portions of the transparent electrode and second conductivity type clad layer, respectively.

摘要翻译： 一种制造氮化镓基半导体发光器件的方法，包括在衬底上顺序地形成第一导电型覆盖层，有源层和第二导电型覆盖层，在第二导电类型上形成透明电极 在所述透明电极上形成光致抗蚀剂膜，使得所述透明电极在预定区域露出，除去与所述预定区域对应的所述透明电极，第二导电型覆盖层和有源层的各部分，从而部分地曝光 第一导电型覆盖层，去除光致抗蚀剂膜，以及分别在透明电极和第二导电型覆盖层的预定部分上形成第一和第二接合电极。

公开(公告)号：US07067401B2

公开(公告)日：2006-06-27

申请号：US11235278

申请日：2005-09-27

申请人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

发明人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

公开(公告)号：US06818531B1

公开(公告)日：2004-11-16

申请号：US10611898

申请日：2003-07-03

申请人： Seung Jin Yoo ,  In Eung Kim ,  Hun Joo Hahm ,  Young Ho Park ,  Jeong Seok Na

发明人： Seung Jin Yoo ,  In Eung Kim ,  Hun Joo Hahm ,  Young Ho Park ,  Jeong Seok Na

IPC分类号： H01L2130

CPC分类号： H01L33/0079 ,  Y10S438/977

摘要： A method for manufacturing vertical GaN light emitting diodes starts by forming a light emitting structure on a sapphire substrate, said light emitting structure including a first conductive GaN clad layer, an active layer and a second conductive GaN clad layer. The light emitting structure is divided into plural units so that the first conductive GaN clad layer of a thickness of at least approximately 100 Å remains. A conductive substrate is attached to the divided upper surface of the light emitting structures using a conductive adhesive layer. A lower surface of the sapphire substrate is irradiated by laser beam so that the sapphire substrate is removed from the unit light emitting structures. First and second contacts are formed respectively on the surfaces of the first conductive clad layer and the conductive substrate. Finally, the resulting structure is cut into plural unit light emitting diodes.

摘要翻译： 通过在蓝宝石衬底上形成发光结构，开始制造垂直GaN发光二极管的方法，所述发光结构包括第一导电GaN覆层，有源层和第二导电GaN覆层。 发光结构被分成多个单元，从而保留至少约100埃的厚度的第一导电GaN覆层。 使用导电性粘合剂层将导电性基板附着到发光结构的分割的上表面。 由激光束照射蓝宝石衬底的下表面，从而将蓝宝石衬底从单位发光结构中去除。 分别在第一导电覆盖层和导电基板的表面上形成第一和第二触点。 最后，将所得到的结构切成多个单位发光二极管。

公开(公告)号：US07160744B2

公开(公告)日：2007-01-09

申请号：US10953815

申请日：2004-09-30

申请人： Young Ho Park ,  Hun Joo Hahm ,  Kun Yoo Ko ,  Hyo Kyong Cho

发明人： Young Ho Park ,  Hun Joo Hahm ,  Kun Yoo Ko ,  Hyo Kyong Cho

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L21/02378 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  Y10S438/964

摘要： The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.

摘要翻译： 本发明涉及一种LED的制造方法，其包括通过激光对基板进行表面处理的步骤以及通过这种制造方法制造的LED。 与现有技术相比，本发明可以使用激光器来实现对LED基板的更精细的表面处理。 结果，本发明可以提高LED的光提取效率，同时保护衬底免受现有技术的慢性问题，例如由化学蚀刻和/或物理抛光引起的应力或缺陷。

公开(公告)号：US07015512B2

公开(公告)日：2006-03-21

申请号：US10852437

申请日：2004-05-25

申请人： Young Ho Park ,  Hun Joo Hahm ,  Seung Jin Yoo

发明人： Young Ho Park ,  Hun Joo Hahm ,  Seung Jin Yoo

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L33/08

摘要： A high power flip chip LED has an n-doped semiconductor layer formed on the sapphire substrate, with a plurality of first regions and a second region of intersecting lines for separating the first regions from each other. P-doped semiconductor layers are on the first regions of the n-doped semiconductor layer to form mesa structures. At least one pair of diagonal corners of the respective mesa structures are rounded inward to form first basins between adjacent inward-rounded corners. First metal layers are on the mesa structures in a same configuration. A second metal layer is on the second region of the n-doped semiconductor layer. First ohmic contacts are on the first metal layers. Second ohmic contacts are on the second metal layer in the first basins. The LED can prevent the current channeling to increase the luminous area while equalizing the current density area thereby generating high brightness light.

摘要翻译： 高功率倒装芯片LED具有形成在蓝宝石衬底上的n掺杂半导体层，具有多个第一区域和用于将第一区域彼此分离的相交线的第二区域。 P掺杂半导体层在n掺杂半导体层的第一区上，以形成台面结构。 相应台面结构的至少一对对角线向内倒圆，以在相邻的内圆角之间形成第一盆。 第一金属层在相同构型的台面结构上。 第二金属层位于n掺杂半导体层的第二区上。 第一个欧姆接触位于第一个金属层上。 第二个欧姆接触位于第一个盆地的第二个金属层上。 LED可以防止电流通道增加发光面积，同时均衡电流密度区域，从而产生高亮度光。

公开(公告)号：US07018912B2

公开(公告)日：2006-03-28

申请号：US10806432

申请日：2004-03-23

申请人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

发明人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

IPC分类号： H01L21/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US07268372B2

公开(公告)日：2007-09-11

申请号：US10601597

申请日：2003-06-24

申请人： Young Ho Park ,  Hun Joo Hahm ,  J ong Seok Na ,  Seung Jin Yoo

发明人： Young Ho Park ,  Hun Joo Hahm ,  J ong Seok Na ,  Seung Jin Yoo

IPC分类号： H01L29/24 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L2221/68363

摘要： Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

摘要翻译： 公开了一种垂直GaN发光二极管及其制造方法。 垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN覆层，形成在第一导电GaN覆层的下表面上的有源层，形成在第一导电GaN覆层 有源层的下表面，形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。 用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤，以防止对结构的GaN单晶面的损坏。