公开(公告)号：US20080105890A1

公开(公告)日：2008-05-08

申请号：US12000870

申请日：2007-12-18

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  June-o Song

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  June-o Song

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/183

摘要： Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide; and a third electrode layer disposed on the second electrode layer and formed of an optical reflective material.

摘要翻译： 提供反射电极和化合物半导体发光器件，例如包括其的LED或LD。 形成在p型化合物半导体层上的反射电极包括：与p型化合物半导体层形成欧姆接触的第一电极层; 设置在第一电极层上并由透明导电氧化物形成的第二电极层; 以及设置在第二电极层上并由光学反射材料形成的第三电极层。

公开(公告)号：US20060252165A1

公开(公告)日：2006-11-09

申请号：US11476680

申请日：2006-06-29

申请人： Mi-yang Kim ,  Joon-seop Kwak

发明人： Mi-yang Kim ,  Joon-seop Kwak

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00 ,  Y10S257/918 ,  Y10S257/93

摘要： A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device comprises a transparent substrate, an electron injection layer having first and second regions on the transparent substrate, an active region formed on the first region, a hole injection layer on the active layer, a first electrode structure on the second region, and a second electrode structure on the hole injection layer, and comprises a first layer including nitrogen and a second layer including Pd. The low contact resistance and high reflectance can be obtained by forming a trivalent compound layer composed of Pa—Ga—N at an interface between the hole injection layer, which is composed of p-GaN, and the metal layer of the p-type electrode.

摘要翻译： 提供了包括p型电极结构并具有低接触电阻和高反射率的半导体发光器件。 半导体发光器件包括透明衬底，在透明衬底上具有第一和第二区域的电子注入层，形成在第一区域上的有源区，有源层上的空穴注入层，第二区域上的第一电极结构 以及空穴注入层上的第二电极结构，并且包括包含氮的第一层和包含Pd的第二层。 低接触电阻和高反射率可以通过在由p-GaN组成的空穴注入层与p型电极的金属层之间的界面处形成由Pa-Ga-N组成的三价化合物层来获得 。

公开(公告)号：US20060157719A1

公开(公告)日：2006-07-20

申请号：US11320811

申请日：2005-12-30

申请人： Joon-seop Kwak ,  Jeong-wook Lee

发明人： Joon-seop Kwak ,  Jeong-wook Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/12

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.

公开(公告)号：US20060081867A1

公开(公告)日：2006-04-20

申请号：US11157971

申请日：2005-06-22

申请人： Mi-yang Kim ,  Joon-seop Kwak

发明人： Mi-yang Kim ,  Joon-seop Kwak

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/1078 ,  H01S5/18 ,  H01S5/2027 ,  H01S5/34333

摘要： Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.

摘要翻译： 提供反射电极和具有诸如LED或LD的反射电极的化合物半导体发光器件。 形成在化合物半导体发光器件的p型化合物半导体层上的反射电极，包括形成Ag和Ag合金之一并与p型化合物半导体层形成欧姆接触的第一电极层，第三电极层 在第一电极层上由选自Ni，Ni合金，Zn，Zn合金，Cu，Cu合金，Ru，Ir和Rh的材料形成的电极层，以及由第一电极层 光反射材料在第三电极层上。

公开(公告)号：US20050062051A1

公开(公告)日：2005-03-24

申请号：US10940748

申请日：2004-09-15

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/32 ,  H01L33/40 ,  H01L29/06

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极， 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

公开(公告)号：US20110198652A1

公开(公告)日：2011-08-18

申请号：US13095487

申请日：2011-04-27

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

IPC分类号： H01L33/60 ,  B82Y99/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32

摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

摘要翻译： 提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。 沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极 反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

公开(公告)号：US07894499B2

公开(公告)日：2011-02-22

申请号：US10823653

申请日：2004-04-14

申请人： Kwang-ki Choi ,  Joon-seop Kwak

发明人： Kwang-ki Choi ,  Joon-seop Kwak

IPC分类号： H01S3/16 ,  H01S5/00

CPC分类号： H01S5/227 ,  H01S5/32341

摘要： A semiconductor laser device having a smooth cleavage plane is provided. The provided laser device includes a current injection ridge and force distribution ridges formed adjacent to the current injection ridge, which protrudes from an upper surface of a mesa structure. The mesa structure is formed of multi-semiconductor material layers including a laser resonance layer and cladding layers disposed above and below the resonance layer. The current injection ridge and the force distribution ridges distribute a scribing force when cleaving the laser device so that the smooth cleavage planes are obtained. Defects are prevented in the current injection ridge due to the distribution of force when bonding flip chips.

摘要翻译： 提供具有平滑解理面的半导体激光器件。 提供的激光装置包括从台面结构的上表面突出的电流注入脊和与当前注入脊相邻形成的力分布脊。 台面结构由包括激光共振层和设置在共振层上方和下方的包覆层的多半导体材料层形成。 当切割激光器件时，当前的注入脊和力分布脊分布划线力，从而获得平滑的解理面。 由于在接合倒装芯片时的力分布，在当前的注入脊中防止了缺陷。

公开(公告)号：US07790486B2

公开(公告)日：2010-09-07

申请号：US11506837

申请日：2006-08-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极， 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

公开(公告)号：US07666693B2

公开(公告)日：2010-02-23

申请号：US12180312

申请日：2008-07-25

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US07521329B2

公开(公告)日：2009-04-21

申请号：US11320811

申请日：2005-12-30

申请人： Joon-seop Kwak ,  Jeong-wook Lee

发明人： Joon-seop Kwak ,  Jeong-wook Lee

IPC分类号： H01L21/8222

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/12

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管和制造半导体发光二极管的方法。 该方法包括在基板上形成第一半导体层; 在所述第一半导体层上形成所述材料层并退火之后，通过将材料层的材料穿入所述第一半导体层而形成纹理化结构化的第一半导体层; 以及在所述第一半导体层上形成第二半导体层。