公开(公告)号：US20110272706A1

公开(公告)日：2011-11-10

申请号：US13188297

申请日：2011-07-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/02 ,  H01L33/50

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。 可以通过调节荧光层的厚度来控制波长在荧光层上传播而移动的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

公开(公告)号：US20100285622A1

公开(公告)日：2010-11-11

申请号：US12842096

申请日：2010-07-23

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/10 ,  H01L33/02

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极， 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

公开(公告)号：US06657237B2

公开(公告)日：2003-12-02

申请号：US10012309

申请日：2001-12-12

申请人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

IPC分类号： H01L3300

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

公开(公告)号：US06444486B1

公开(公告)日：2002-09-03

申请号：US09925326

申请日：2001-08-10

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L2100

CPC分类号： H01S5/22 ,  H01S5/0422 ,  H01S5/0655 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/176

摘要： A semiconductor laser diode having a ridge wave guide and a method of manufacturing the same are provided. The semiconductor laser diode in which a ridge protruding perpendicularly to an active layer is formed in one of first and second material layers in which stimulated emission occurs, the first and second material layers being formed over and under the active layer, respectively, and having lower refractive indices than the active layer, the semiconductor laser diode contacting an electrode via the ridge, wherein the side of the ridge is made up of at least two portions having different gradients.

摘要翻译： 提供具有脊波导的半导体激光二极管及其制造方法。 半导体激光二极管其中垂直于有源层突出的脊形成在其中发生受激发射的第一和第二材料层中的一个中，第一和第二材料层分别形成在有源层上方和下方，并且具有较低的 所述半导体激光二极管经由所述脊与电极接触，其中所述脊的一侧由具有不同梯度的至少两个部分构成。

公开(公告)号：US08399944B2

公开(公告)日：2013-03-19

申请号：US10445992

申请日：2003-05-28

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L31/0232

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

公开(公告)号：US07566578B2

公开(公告)日：2009-07-28

申请号：US10673251

申请日：2003-09-30

申请人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

公开(公告)号：US06654398B2

公开(公告)日：2003-11-25

申请号：US10053736

申请日：2002-01-24

申请人： Jae-hee Cho ,  Joon-seop Kwak

发明人： Jae-hee Cho ,  Joon-seop Kwak

IPC分类号： H01S500

CPC分类号： H01S5/06203 ,  H01S5/0424 ,  H01S5/065 ,  H01S5/2231

摘要： A semiconductor laser diode for controlling the width of a carrier inflow path is provided. The semiconductor laser diode includes a p-type material layer for lasing between a p-type electrode and an n-type electrode, an active layer, and an n-type material layer. The p-type electrode restrictively contacts the p-type material layer. A carrier inflow width controller is included to control the width of a path of carriers flowing from the p-type electrode into the active layer.

公开(公告)号：US08324004B2

公开(公告)日：2012-12-04

申请号：US12495000

申请日：2009-06-30

申请人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

摘要翻译： 提供一种GaN基III-V族氮化物半导体发光器件及其制造方法。 在GaN基III-V族氮化物半导体发光器件中，包括面向相反方向或相同方向的第一和第二电极，其间具有耐高压衬底和用于发光或发光的材料层，第二电极直接接触 最外层的材料层通过高阻基板的蚀刻区域露出。 可以在高阻基板的底部上形成导热层以覆盖最外层材料层的暴露区域。

公开(公告)号：US20110198652A1

公开(公告)日：2011-08-18

申请号：US13095487

申请日：2011-04-27

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

IPC分类号： H01L33/60 ,  B82Y99/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32

摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

摘要翻译： 提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。 沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极 反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

公开(公告)号：US07790486B2

公开(公告)日：2010-09-07

申请号：US11506837

申请日：2006-08-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极， 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。