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    Normal pressure aerosol spray apparatus and method of forming a film using the same
    1.
    发明授权
    Normal pressure aerosol spray apparatus and method of forming a film using the same 有权
    普通压力气溶胶喷雾装置及使用其形成膜的方法

    公开(公告)号：US08349398B2

    公开(公告)日：2013-01-08

    申请号：US12473560

    申请日：2009-05-28

    申请人： Hee-Sung Choi ,  Kwang-Su Kim ,  Hoo-Mi Choi ,  Tae-Sung Kim ,  Mi-Yang Kim ,  Hyun-Ho Shin

    发明人： Hee-Sung Choi ,  Kwang-Su Kim ,  Hoo-Mi Choi ,  Tae-Sung Kim ,  Mi-Yang Kim ,  Hyun-Ho Shin

    IPC分类号： B05C11/10

    CPC分类号： B05B7/168 ,  B05B7/1486 ,  C23C24/04

    摘要： An aerosol spray apparatus and a method of forming a film using the aerosol spray apparatus are disclosed. The aerosol spray apparatus in accordance with an embodiment of the present invention includes: a carrier gas injection unit, which forms carrier gas by vaporizing liquefied gas and increases the pressure of the carrier gas; an aerosol forming unit, which forms an aerosol by mixing the carrier gas with powder; and a film forming unit, which sprays the aerosol in a normal pressure environment such that the film is formed on the surface of the board. The apparatus can perform a coating process with no restriction of the type and size of powder, simplify the process because the film can be formed in a normal temperature and pressure environment, and control a wide range of film thickness in a short time.

    摘要翻译： 公开了一种气溶胶喷雾装置和使用该气溶胶喷雾装置形成膜的方法。 根据本发明实施例的气溶胶喷涂装置包括：载气注入单元，其通过汽化液化气形成载气并增加载气的压力; 气溶胶形成单元，其通过将载气与粉末混合而形成气溶胶; 以及成膜单元，其在常压环境中喷雾气溶胶，使得膜形成在板的表面上。 该装置可以在不限制粉末的类型和尺寸的情况下进行涂覆处理，简化工艺，因为该膜可以在常温常压环境中形成，并且在短时间内控制大范围的膜厚度。

    Method of forming InP quantum dot and InP quantum dot formed by the same
    3.
    发明申请
    Method of forming InP quantum dot and InP quantum dot formed by the same 审中-公开
    形成InP量子点和由其形成的InP量子点的方法

    公开(公告)号：US20110195010A1

    公开(公告)日：2011-08-11

    申请号：US12807344

    申请日：2010-09-01

    申请人： Jae il Kim ,  Seung Mi Lee ,  Mi Yang Kim

    发明人： Jae il Kim ,  Seung Mi Lee ,  Mi Yang Kim

    IPC分类号： C01B25/00 ,  B82Y20/00

    CPC分类号： C01B25/082 ,  B82Y40/00

    摘要： Disclosed herein is a method of forming a spherical InP quantum dot, including: providing a compound containing indium (In); dissolving the compound in alcohol to form a solution; and introducing a compound containing phosphorus (P) into the solution. The method is advantageous because a spherical InP quantum dot can be formed, the method is environment-friendly because alcohol is used as a solvent, because InP quantum dots can be produced in large quantities because the InP quantum dots can be formed while putting all reactants into a reactor and slowly heating the reactants, and because the desired InP quantum dots can be easily recovered by decreasing the temperature of a reactor or by performing centrifugal separation at low speed.

    摘要翻译： 本文公开了形成球形InP量子点的方法，包括：提供含铟（In）的化合物; 将化合物溶解在醇中以形成溶液; 并将含磷（P）的化合物引入溶液中。 该方法是有利的，因为可以形成球形InP量子点，因为使用醇作为溶剂，该方法是环境友好的，因为可以大量生成InP量子点，因为可以在放入所有反应物的同时形成InP量子点 进入反应器并缓慢加热反应物，并且因为通过降低反应器的温度或通过低速进行离心分离可以容易地回收所需的InP量子点。

    Reflective electrode and compound semiconductor light emitting device including the same
    4.
    发明授权
    Reflective electrode and compound semiconductor light emitting device including the same 有权
    反射电极和包含该反射电极的化合物半导体发光器件

    公开(公告)号：US07973325B2

    公开(公告)日：2011-07-05

    申请号：US11157971

    申请日：2005-06-22

    申请人： Mi-yang Kim ,  Joon-seop Kwak

    发明人： Mi-yang Kim ,  Joon-seop Kwak

    IPC分类号： H01L33/00

    CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/1078 ,  H01S5/18 ,  H01S5/2027 ,  H01S5/34333

    摘要： Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.

    摘要翻译： 提供反射电极和具有诸如LED或LD的反射电极的化合物半导体发光器件。 形成在化合物半导体发光器件的p型化合物半导体层上的反射电极，包括形成Ag和Ag合金之一并与p型化合物半导体层形成欧姆接触的第一电极层，第三电极层 在第一电极层上由选自Ni，Ni合金，Zn，Zn合金，Cu，Cu合金，Ru，Ir和Rh的材料形成的电极层，以及由第一电极层 光反射材料在第三电极层上。

    NORMAL PRESSURE AEROSOL SPRAY APPARATUS AND METHOD OF FORMING A FILM USING THE SAME
    6.
    发明申请
    NORMAL PRESSURE AEROSOL SPRAY APPARATUS AND METHOD OF FORMING A FILM USING THE SAME 有权
    正压压缩空气喷雾装置及其形成膜的方法

    公开(公告)号：US20090298251A1

    公开(公告)日：2009-12-03

    申请号：US12473560

    申请日：2009-05-28

    申请人： Hee-Sung CHOI ,  Kwang-Su Kim ,  Hoo-Mi Choi ,  Tae-Sung Kim ,  Mi-Yang Kim ,  Hyun-Ho Shin

    发明人： Hee-Sung CHOI ,  Kwang-Su Kim ,  Hoo-Mi Choi ,  Tae-Sung Kim ,  Mi-Yang Kim ,  Hyun-Ho Shin

    IPC分类号： H01L21/46 ,  B05C19/02 ,  B05D1/12

    CPC分类号： B05B7/168 ,  B05B7/1486 ,  C23C24/04

    摘要： An aerosol spray apparatus and a method of forming a film using the aerosol spray apparatus are disclosed. The aerosol spray apparatus in accordance with an embodiment of the present invention includes: a carrier gas injection unit, which forms carrier gas by vaporizing liquefied gas and increases the pressure of the carrier gas; an aerosol forming unit, which forms an aerosol by mixing the carrier gas with powder; and a film forming unit, which sprays the aerosol in a normal pressure environment such that the film is formed on the surface of the board. The apparatus can perform a coating process with no restriction of the type and size of powder, simplify the process because the film can be formed in a normal temperature and pressure environment, and control a wide range of film thickness in a short time.

    摘要翻译： 公开了一种气溶胶喷雾装置和使用该气溶胶喷雾装置形成膜的方法。 根据本发明实施例的气溶胶喷涂装置包括：载气注入单元，其通过汽化液化气形成载气并增加载气的压力; 气溶胶形成单元，其通过将载气与粉末混合而形成气溶胶; 以及成膜单元，其在常压环境中喷射气溶胶，使得膜形成在板的表面上。 该装置可以在不限制粉末的类型和尺寸的情况下进行涂覆处理，简化工艺，因为该膜可以在常温常压环境中形成，并且在短时间内控制大范围的膜厚度。

    Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same
    7.
    发明申请
    Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same 审中-公开
    电极结构，半导体发光装置及其制造方法

    公开(公告)号：US20060252165A1

    公开(公告)日：2006-11-09

    申请号：US11476680

    申请日：2006-06-29

    申请人： Mi-yang Kim ,  Joon-seop Kwak

    发明人： Mi-yang Kim ,  Joon-seop Kwak

    IPC分类号： H01L21/00

    CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/021 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00 ,  Y10S257/918 ,  Y10S257/93

    摘要： A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device comprises a transparent substrate, an electron injection layer having first and second regions on the transparent substrate, an active region formed on the first region, a hole injection layer on the active layer, a first electrode structure on the second region, and a second electrode structure on the hole injection layer, and comprises a first layer including nitrogen and a second layer including Pd. The low contact resistance and high reflectance can be obtained by forming a trivalent compound layer composed of Pa—Ga—N at an interface between the hole injection layer, which is composed of p-GaN, and the metal layer of the p-type electrode.

    摘要翻译： 提供了包括p型电极结构并具有低接触电阻和高反射率的半导体发光器件。 半导体发光器件包括透明衬底，在透明衬底上具有第一和第二区域的电子注入层，形成在第一区域上的有源区，有源层上的空穴注入层，第二区域上的第一电极结构 以及空穴注入层上的第二电极结构，并且包括包含氮的第一层和包含Pd的第二层。 低接触电阻和高反射率可以通过在由p-GaN组成的空穴注入层与p型电极的金属层之间的界面处形成由Pa-Ga-N组成的三价化合物层来获得 。

    Reflective electrode and compound semiconductor light emitting device including the same
    8.
    发明申请
    Reflective electrode and compound semiconductor light emitting device including the same 有权
    反射电极和包含该反射电极的化合物半导体发光器件

    公开(公告)号：US20060081867A1

    公开(公告)日：2006-04-20

    申请号：US11157971

    申请日：2005-06-22

    申请人： Mi-yang Kim ,  Joon-seop Kwak

    发明人： Mi-yang Kim ,  Joon-seop Kwak

    IPC分类号： H01L33/00

    CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/1078 ,  H01S5/18 ,  H01S5/2027 ,  H01S5/34333

    摘要： Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.

    摘要翻译： 提供反射电极和具有诸如LED或LD的反射电极的化合物半导体发光器件。 形成在化合物半导体发光器件的p型化合物半导体层上的反射电极，包括形成Ag和Ag合金之一并与p型化合物半导体层形成欧姆接触的第一电极层，第三电极层 在第一电极层上由选自Ni，Ni合金，Zn，Zn合金，Cu，Cu合金，Ru，Ir和Rh的材料形成的电极层，以及由第一电极层 光反射材料在第三电极层上。