公开(公告)号：US08952389B2

公开(公告)日：2015-02-10

申请号：US13471154

申请日：2012-05-14

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/40 ,  H01L33/50 ,  H01L33/20

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。 可以通过调节荧光层的厚度来控制波长在荧光层中传播的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

公开(公告)号：US08435813B2

公开(公告)日：2013-05-07

申请号：US13438323

申请日：2012-04-03

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极， 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

公开(公告)号：US20050062051A1

公开(公告)日：2005-03-24

申请号：US10940748

申请日：2004-09-15

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/32 ,  H01L33/40 ,  H01L29/06

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极， 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

公开(公告)号：US08536604B2

公开(公告)日：2013-09-17

申请号：US13188297

申请日：2011-07-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/02

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

公开(公告)号：US07960746B2

公开(公告)日：2011-06-14

申请号：US10979240

申请日：2004-11-03

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L23/48 ,  H01L23/52 ,  H01L23/40 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32

摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

摘要翻译： 提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。 沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极 反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

公开(公告)号：US20090325334A1

公开(公告)日：2009-12-31

申请号：US12495000

申请日：2009-06-30

申请人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

发明人： Joon-seop Kwak ,  Kyo-yeol Lee ,  Jae-hee Cho ,  Su-hee Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/641 ,  H01L2933/0016 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/34333 ,  Y10S438/928

摘要： A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

摘要翻译： 提供一种GaN基III-V族氮化物半导体发光器件及其制造方法。 在GaN基III-V族氮化物半导体发光器件中，包括面向相反方向或相同方向的第一和第二电极，其间具有耐高压衬底和用于发光或发光的材料层，第二电极直接接触 最外层的材料层通过高阻基板的蚀刻区域露出。 可以在高阻基板的底部上形成导热层以覆盖最外层材料层的暴露区域。

公开(公告)号：US20070235814A1

公开(公告)日：2007-10-11

申请号：US11654602

申请日：2007-01-18

申请人： Jae-hee Cho ,  Joon-seop Kwak

发明人： Jae-hee Cho ,  Joon-seop Kwak

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： A GaN-based semiconductor light-emitting device is provided having an improved structure in which the optical output and luminous efficiency are improved. The GaN-based semiconductor light-emitting device includes an n-electrode, a p-electrode, and an n-type semiconductor layer, an active layer and a p-type semiconductor layer, which are disposed between the n-electrode and the p-electrode, wherein the p-electrode includes a first electrode layer formed of Zn or a Zn-based alloy on the p-type semiconductor layer, a second electrode layer formed of Ag or an Ag-based alloy on the first electrode layer, and a third electrode layer formed of a transparent conductive oxide on the second electrode layer.

摘要翻译： 提供了一种具有提高光输出和发光效率的改进结构的GaN基半导体发光器件。 GaN基半导体发光器件包括设置在n电极和p电极之间的n电极，p电极和n型半导体层，有源层和p型半导体层 - 电极，其中所述p电极包括在所述p型半导体层上由Zn或Zn基合金形成的第一电极层，在所述第一电极层上由Ag或Ag基合金形成的第二电极层，以及 由第二电极层上的透明导电氧化物形成的第三电极层。

公开(公告)号：US20060281209A1

公开(公告)日：2006-12-14

申请号：US11506837

申请日：2006-08-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

公开(公告)号：US20110272706A1

公开(公告)日：2011-11-10

申请号：US13188297

申请日：2011-07-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/02 ,  H01L33/50

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。 可以通过调节荧光层的厚度来控制波长在荧光层上传播而移动的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

公开(公告)号：US20100285622A1

公开(公告)日：2010-11-11

申请号：US12842096

申请日：2010-07-23

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/10 ,  H01L33/02

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极， 和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。